MMBT5401 [SECOS]
General PurposeTransistor; 一般PurposeTransistor
| 型号： | MMBT5401 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | General PurposeTransistor |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
A
L
Ideal for medium power amplification and switching
3
3
Top View
C B
1
1
2
MARKING
2
K
F
E
2L
D
H
J
G
ABSOLUTE MAXIMUM RATINGS
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
REF.
REF.
Parameter
Symbol Ratings
Unit
V
A
B
C
D
2.80
2.25
1.20
0.90
3.00
2.55
1.40
1.15
G
H
J
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
VCEO
VCBO
VEBO
IC
-150
-160
-5.0
V
K
0.5 REF.
V
E
F
1.80
0.30
2.00
0.50
L
0.95 TYP.
Collector Current - Continuous
-500
mA
THERMAL CHARACTERISTICS
Parameter
Symbol
Ratings
Unit
TA = 25°C
Derate above 25°C
225
1.8
mW
mW / ℃
Total Power Dissipation
PD
Thermal Resistance, Junction to Ambient
Total Power Dissipation
RθJA
PD
556
℃ / W
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
300
2.4
mW
mW / ℃
Thermal Resistance, Junction to Ambient
Junction, Storage Temperature
RθJA
417
℃ / W
TJ, TSTG
-55 ~ +150
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Test Conditions Symbol
Min.
Max.
Unit
Off Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
IC = -1.0 mA, IB = 0
IC = -100 μA, IE = 0
IE = -10 μA, IC = 0
BVCEO
BVCBO
BVEBO
-150
-160
-5.0
-
-
-
V
V
V
V
V
CB = -120 V, IE = 0
CB = -120 V, IE = 0, TA = 100°C
-100
-100
nA
μA
Collector Cutoff Current
ICES
-
On Characteristics
IC = –1.0 mA, VCE = –5.0 V
IC = –10 mA, VCE = –5.0 V
IC = –50 mA, VCE = –5.0 V
80
100
50
-
200
-
DC Current Gain
hFE
-
IC = –10 mA, IB = –1.0 mA
IC = –50 mA, IB = –5.0 mA
-0.2
-0.5
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
-
-
V
V
IC = –10 mA, IB = –1.0 mA
IC = –50 mA, IB = –5.0 mA
-1.0
-1.0
VBE(sat)
Small Signal Characteristics
Current-Gain - Bandwidth Product
IC =-10 mA, VCE = -10 V, f = 100 MHz
VCB = -10 V, IE = 0, f = 1.0 MHz
fT
100
-
MHz
pF
-
Output Capacitance
COBO
hFE
-
50
-
6.0
200
8.0
Small Signal Current Gain
IC = -1.0 mA, VCE =-10 V, f = 1.0 kHz
Noise Figure
IC = –200 μA, VCE = –5.0 V, RS = 10 Ω, f = 1.0 kHz
NF
dB
Note:
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Page 1 of 3
01-June-2002 Rev. A
MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
CHARACTERISTICS CURVE
200
150
T = 125
J
100
25 C
70
50
-55 C
0.3
V
V
CE
= -1.0 V
= -5.0 V
CE
30
20
0.1
0.2
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I = 1.0 mA
C
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
3
10
V
CE
= 30 V
2
10
I = I
C
CES
1
10
T = 125 C
J
0
10
75 C
-1
10
REVERSE
25 C
FORWARD
-2
10
-3
10
0.3 0.2 0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
V , BASE-EMITTER VOLTAGE (VOLTS)
BE
Figure 3. Collector Cut-Off Region
01-June-2002 Rev. A
Page 2 of 3
MMBT5401
PNP Silicon
General PurposeTransistor
Elektronische Bauelemente
CHARACTERISTICS CURVE
1.0
0.9
2.5
2.0
T = 25 C
J
T = -55 C to 135 C
J
0.8
0.7
0.6
1.5
1.0
0.5
V
@ I / I = 10
C B
BE(sat)
θ
for V
VC
VB
CE(sat)
0
0.5
0.4
0.3
0.2
0.1
0
-0.5
-1.0
-1.5
V
@ I / I = 10
CE(sat)
C
B
θ
for V
BE(sat)
-2.0
-2.5
0.1 0.2
1.0 2.03.0 5.0
0.1 0.2
1.0 2.03.0 5.0
0.3 0.5
10 20 30 50 100
0.3 0.5
10
20 30 50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. "On" Voltages
Figure 5. Temperature Coefficients
100
70
T = 25 C
J
50
V
BB
V
CC
+ 8.8 V
-30 V
30
20
10.2V
C
ibo
100
3.0k
R
C
V
in
10
7.0
5.0
V
out
0.25μF
10μs
R
B
INPUT PULSE
C
obo
5.1k
100
3.0
2.0
t, t10 ns
DUTY CYCLE = 1.0%
V
in
1N914
r
f
1.0
0.2
1.0
2.0 3.0 5.0 7.0
10
0.3
0.5 0.7
20
Values Shown are for I @ 10 mA
V , REVERSE VOLTAGE (VOLTS)
R
C
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
500
2000
I / I = 10
T = 25 C
J
C
B
t @ V = 120 V
r
CC
1000
700
500
I / I = 10
T = 25 C
J
C
B
t @ V = 120 V
f
CC
300
200
t @ V = 30 V
r
CC
t @ V = 30 V
f
CC
300
200
100
70
t @ V = 120 V
s
CC
100
70
50
50
30
20
t @ V
= 1.0 V
d
BE(off)
V
CC
= 120 V
30
20
10
0.2
1.0 2.03.0 5.0
0.3 0.5
10 20 30 50 100 200
0.20.3 0.5 1.0 2.0 3.0 5.0 10
20 30 50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
01-June-2002 Rev. A
Page 3 of 3
相关型号：
MMBT5401-13
Small Signal Bipolar Transistor, 0.2A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES
MMBT5401-T1
Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
SAMSUNG
©2020 ICPDF网 联系我们和版权申明