SBL20U45F_15 [SECOS]

Low VF Planar MOS Barrier Schottky Rectifier;


型号：	SBL20U45F_15
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	Low VF Planar MOS Barrier Schottky Rectifier
文件：	总2页 (文件大小：158K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SBL20U45F

Voltage 45V, 20.0 Amp

Low VF Planar MOS Barrier Schottky Rectifier

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

ITO-220

FEATURES

ꢀ

Planar MOS Schottky technology

Low forward voltage drop

High current capability

High reliability

High surge current capability

Epitaxial construction

MECHANICAL DATA

ꢀ

Case: Molded plastic

Epoxy: UL94V-0 rate flame retardant

Lead: Lead solderable per MIL-STD-202

method 208 guaranteed

ꢀ

Polarity: As Marked

Mounting position: Any

Weight: 1.98 g (Approximate)

Millimeter

Min.

Millimeter

REF.

Max.

15.70

10.50

14.00

4.70

3.2

Min.

2.70

0.90

0.50

2.34

2.40

φ 3.0

Max.

4.00

1.50

0.90

2.74

3.00

φ 3.4

14.60

9.50

12.60

4.30

2.30

0.30

2.90

0.75

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Symbol

Rating

Unit

Maximum Recurrent Peak Reverse Voltage

Working Peak Reverse Voltage

V_RRM

V_RSM

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current

(Per Leg)

I_F

(Per Device)

I_FSM

150

Peak Forward Surge Current, 8.3 ms single half sine-wave

Voltage Rate of Chance (Rated V_R)

dv/dt

10000

V / µs

°C /W

°C

Typical Thermal Resistance

R_θ

Operating and Storage Temperature Range

T_J,T_STG

-40~150

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Typ.

Max.

0.37

0.42

0.45

0.48

Unit

Test Condition

I_F= 3A, T_J= 25°C

0.34

0.38

0.43

0.46

0.45

I_F= 5A, T_J= 25°C

I_F= 8A, T_J= 25°C

I_F= 10A, T_J= 25°C

I_F= 10A, T_J= 125°C

T_J=25°C

Maximum Instantaneous Forward

Voltage

V_F

0.5

Maximum DC Reverse Current

at Rated DC Blocking Voltage ²

Typical Junction Capacitance ¹

I_R

T_J=100°C

C_J

420

NOTES:

1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.

2. Pulse Test：Pulse Width = 300 µs, Duty Cycle ≦ 2.0%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

06-Mar -2014 Rev. A

Page 1 of 2

SBL20U45F

Voltage 45V, 20.0 Amp

Low VF Planar MOS Barrier Schottky Rectifier

Elektronische Bauelemente

RATINGS AND CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

06-Mar -2014 Rev. A

Page 2 of 2

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