SCG4153_15 [SECOS]

N-Channel Enhancement Mode MOSFET;


型号：	SCG4153_15
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Channel Enhancement Mode MOSFET
文件：	总4页 (文件大小：683K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SCG4153

0.8A , 20V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SOT-523

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low R_DS(on)and to

ensure minimal power loss and heat dissipation.

Top View

C B

MECHANICAL DATA

ꢀ

Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

Millimeter

Min. Max.

APPLICATION

REF.

Min.

Max.

1.5

1.45

0.7

1.7

1.75

0.9

0.1

ꢀ

DC-DC converter circuit

Load Switch

0.55 REF.

ꢀ

0.1

0.2

0.7

0.9

1.1

0.5 TYP.

0.25 0.325

0.15

0.35

MARKING

Top View

N3^ꢀ

ꢀ

= Date Code

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-523

7 inch

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter Symbol

Rating

Unit

10S

Steady State

Drain – Source Voltage

V_DS

V_GS

±6

Gate – Source Voltage

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

T_A= 25°C

T_A= 70°C

0.88

0.71

0.37

0.23

0.76

0.6

0.8

Continuous Drain Current ¹

I_D

P_D

I_D

0.64

0.3

Power Dissipation ¹

0.19

0.69

0.55

0.22

0.14

Continuous Drain Current ²

Power Dissipation ²

0.27

0.17

P_D

Pulsed Drain Current ³

Lead Temperature

I_DM

T_L

1.4

°C

260

Operating Junction & Storage Temperature Range

T_J, T_STG

150, -55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Mar-2013 Rev. A

Page 1 of 4

SCG4153

0.8A , 20V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

THERMAL RESISTANCE RATINGS

Rating

Parameter

Symbol

Unit

Typ.

285

340

385

455

260

Max.

335

405

450

545

300

T≦10S

Junction-to-Ambient Thermal Resistance ¹

Junction-to-Ambient Thermal Resistance ²

R_θJA

Steady State

T≦10S

°C / W

R_θJA

R_θJC

Steady State

Junction-to-Case Thermal Resistance

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%

4. Repetitive rating, pulse width limited by junction temperature T_J=150°C.

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

V_(BR)DSS

I_DSS

µA

V_GS=0, I_D=250µA

V_DS=16V, V_GS=0

I_GSS

±5

V_DS=0 , V_GS= ±5V

V_DS=V_GS,I_D=250µA

V_GS=4.5V, I_D=0.55A

V_GS=2.5V, I_D=0.45A

V_GS=1.8V, I_D=0.35A

V_DS=10V, I_D=0.4A

Gate-Threshold Voltage

V_GS(TH)

0.45

0.55

220

260

320

310

360

460

Drain-Source On Resistance

Forward Transconductance

Diode Forward On–Voltage

R_DS(ON)

mΩ

g_FS

Body-Drain Diode Ratings

V_SD0.5 0.7

Dynamic Characteristics

1.5

I_S=350mA, V_GS=0

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Turn-on Delay Time

Rise Time

C_ISS

C_OSS

C_RSS

Q_G(TOT)

Q_G(TH)

Q_GS

V_DS=10V,

V_GS=0,

f=100KHz

7.5

1.15

0.06

0.15

0.23

V_DS=10V,

V_GS=4.5V,

I_D=0.55A

Q_GD

T_d(ON)

T_r

T_d(OFF)

T_f

V_DD=10V,

I _D=0.55A,

V_GS=4.5V,

R_G=6Ω.

Turn-off Delay Time

Fall Time

700

380

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Mar-2013 Rev. A

Page 2 of 4

SCG4153

0.8A , 20V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Mar-2013 Rev. A

Page 3 of 4

SCG4153

0.8A , 20V , R_DS(ON)310 mΩ

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

12-Mar-2013 Rev. A

Page 4 of 4

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