SD36L_15 [SECOS]
350W Plastic Encapsulate ESD Protection Diodes;型号: | SD36L_15 |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | 350W Plastic Encapsulate ESD Protection Diodes |
文件: | 总2页 (文件大小:318K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD36L
Voltage 36V
350W Plastic Encapsulate ESD Protection Diodes
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOD-323L
FEATURES
350 Watts peak pulse power(tp=8/20μs)
Small package for use in portable electronics
Suitable replacement for MLV’S in ESD protection
applications
Low clamping voltage and leakage current
In compliance with EU RoHS 2002/95/EC directives
A
D
B
C
APPLICATIONS
E
Case:SOD-323L, plastic
Terminals:Solderable per MIL-STD-750, Method 2026
Polarity:Color band cathode
F
Approx. Weight:0.0001 ounce, 0.0041 grams
Millimeter
Min. Max.
Millimeter
Min. Max.
1.60 1.80
0.25 0.40
0.05 0.25
REF.
REF.
A
B
C
2.30 2.70
1.15 1.35
0.80 1.00
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOD-323L
5K
7’ inch
MAXIMUM RATINGS (TA=25°C unless otherwise specified )
Parameter
Peak Pulse Power (tp = 8/20μs)
ESD Voltage
Symbol
Value
350
Unit
W
PPK
VESD
25
KV
°C
Operating and Storage Temperature Range
TJ, TSTG
-50~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified )
Parameter
Symbol
VRWM
VBR
Min.
Typ.
Max.
Unit
V
Conditions
-
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20 μs)
-
-
-
36
45
1
39.9
V
IBR=1Ma
IR
-
-
-
-
-
μA
V
VR=36V
VC
-
60
-
IPP=1A
30
1
pF
pF
0Vdc Bias = f = 1MHz
5Vdc Bias = f = 1MHz
Off State Junction Capacitance
CJ
-
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Sep-2012 Rev. A
Page 1 of 2
SD36L
Voltage 36V
350W Plastic Encapsulate ESD Protection Diodes
Elektronische Bauelemente
RATINGS AND CHARACTERISTICS CURVES
FIG.1‐Pulse Wave Form
FIG.2‐Power Derating Curve
FIG.3‐ Peak Pulse Power vs Pulse Time
FIG.4‐Typical Reverse Voltage vs Capacitance
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Sep-2012 Rev. A
Page 2 of 2
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