SMG2322N [SECOS]
N-Channel Enhancement MOSFET; N沟道增强型MOSFET
| 型号： | SMG2322N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement MOSFET |
| 文件： | 总4页 (文件大小：567K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2322N
2.5A, 30V, RDS(ON) 85 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
A
L
3
3
Top View
C B
1
1
2
FEATURES
2
K
F
E
Low RDS(on) provides higher efficiency and extends
battery life.
D
Low thermal impedance copper leadframe SC-59
saves board space.
H
J
G
Fast switching speed.
High performance trench technology.
Millimeter
Min. Max.
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
REF.
REF.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.20
APPLICATION
K
0.45
0.55
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SC-59
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
2.5
V
V
TA=25°C
TA=70°C
Continuous Drain Current 1
ID
A
2
Pulsed Drain Current 2
IDM
IS
10
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
0.46
1.25
0.8
Power Dissipation 1
PD
W
TJ, TSTG
-55~150
°C
Thermal Resistance Rating
t≦5 sec
RθJA
150
200
Maximum Junction to Ambient 1
°C/W
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 1 of 4
SMG2322N
2.5A, 30V, RDS(ON) 85 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ. Max. Unit
Static
Test Condition
Gate-Threshold Voltage
VGS(th)
IGSS
1
-
1.5
4
3
100
1
V
VDS=VGS, ID=250μA
Gate-Body Leakage
nA
VDS=0, VGS=8V
-
-
VDS=16V, VGS=0
VDS=20V, VGS=0, TJ=55°C
VDS=5V, VGS=4.5V
VGS=10V, ID=2.5A
VGS=4.5V, ID=1.7A
VDS=5V,,ID=3A
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
IDSS
ID(ON)
μA
A
-
-
10
-
6
-
-
62
102
3.5
0.65
85
125
-
RDS(ON)
mΩ
-
Forward Transconductance 1
Diode Forward Voltage
gFS
-
S
V
VSD
-
-
IS=0.46A, VGS=0
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
-
-
-
3.5
7
2
ID=2.5A
nC
pF
V
V
DS=10V
GS=4.5V
0.8
1.0
720
165
60
Qgd
2
Ciss
1500
400
200
20
VDS=15V
GS=0
V
Coss
Crss
Td(ON)
Tr
f=1MHz
10
ID=1A, VDD=10V
VGEN=4.5V
RG=6Ω
13
30
nS
Turn-Off Delay Time
Td(OFF)
Tf
14
30
Fall Time
Notes:
4
20
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 2 of 4
SMG2322N
2.5A, 30V, RDS(ON) 85 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 3 of 4
SMG2322N
2.5A, 30V, RDS(ON) 85 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Apr-2011 Rev. B
Page 4 of 4
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