SMG2361P_15 [SECOS]
P-Channel Enhancement MOSFET;
| 型号： | SMG2361P_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总4页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2361P
-3.4A , -60V , RDS(ON) 210 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SC-59
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
A
L
ensure minimal power loss and heat dissipation.
3
3
Top View
C B
1
1
2
FEATURES
2
K
F
E
ꢀ
Low RDS(on) provides higher efficiency and extends
battery life.
D
H
J
ꢀ
Low thermal impedance copper leadframe SC-59
saves board space.
G
Millimeter
Min. Max.
Millimeter
ꢀ
ꢀ
Fast switching speed.
High performance trench technology.
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
0.10
0.45
0.85
0.20
0.55
1.15
K
E
F
1.70
0.35
2.30
0.50
L
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SC-59
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
-60
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
V
VGS
±20
TA=25°C
TA=70°C
-3.4
Continuous Drain Current 1
ID
A
-2.6
Pulsed Drain Current 2
IDM
IS
-20
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
-1.6
1.3
Power Dissipation 1
PD
W
°C
0.8
TJ, TSTG
-55~150
Thermal Resistance Data
t ≦ 10 sec
100
166
Maximum Junction to Ambient 1
RθJA
°C / W
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 1 of 4
SMG2361P
-3.4A , -60V , RDS(ON) 210 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ Max
Unit
Test Condition
Static
-1
-
-
-
±100
-1
Gate-Threshold Voltage
VGS(th)
IGSS
V
VDS=VGS, ID= -250µA
-
Gate-Body Leakage
nA
VDS=0, VGS= ±20V
-
-
V
DS= -48V, VGS=0
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
IDSS
µA
A
-
-
-10
-
VDS= -48V, VGS=0, TJ=55°C
VDS= -5V, VGS= -10V
VGS= -10V, ID= -2.7A
VGS= -4.5V, ID= -2.2A
VDS= -15V,,ID= -2.7A
IS= -0.8A, VGS=0
-8
-
-
ID(ON)
-
-
210
250
-
RDS(ON)
mΩ
-
Forward Transconductance 1
Diode Forward Voltage
gFS
S
V
-
10
-
-0.83
-
VSD
Dynamic 2
-
5
-
-
-
-
-
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
ID= -2.7A
VDS= -30V
VGS= -4.5V
-
-
-
-
-
-
-
-
-
2.2
2.3
7
nC
nS
pF
Qgd
Td(ON)
Tr
ID= -2.7A,
VDS= -30V,
VGEN= -10V,
RGEN=6Ω
5
23
6
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
RL=11.2Ω
371
31
26
Input Capacitance
Output Capacitance
Ciss
VDS= -15V
VGS=0
f=1MHz
Coss
Crss
Reverse Transfer Capacitance
Notes:
1.
2.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 2 of 4
SMG2361P
-3.4A , -60V , RDS(ON) 210 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 3 of 4
SMG2361P
-3.4A , -60V , RDS(ON) 210 mΩ
P-Channel Enhancement MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Aug-2013 Rev. A
Page 4 of 4
相关型号：
SMG250VB221M22X30LL
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250V, 220uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON
SMG250VB271M22X35LL
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 250V, 270uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON
©2020 ICPDF网 联系我们和版权申明