SPR45N10_15 [SECOS]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | SPR45N10_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPR45N10
45A , 100V , RDS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
PR-8PP
The SPR45N10 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The PR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
ꢀ
ꢀ
ꢀ
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
Millimeter
Millimeter
45N10
ꢁꢁꢁꢁ
REF.
REF.
Min.
Max.
Min.
Max.
ꢁ
= Date code
A
B
C
D
E
F
4.9
5.1
G
H
I
J
K
L
0.8
1.0
5.7
5.9
0.254 Ref.
5.95
6.2
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
1.27 BSC.
0.35
0.1
0.49
0.2
PACKAGE INFORMATION
Package
MPQ
3K
Leader Size
S
S
S
G
D
D
D
D
PR-8PP
13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
100
±20
45
Unit
V
V
Gate-Source Voltage
VGS
TC=25°C
TC=100°C
TC=25°C
A
Continuous Drain Current 1@VGS=10V
ID
28
A
Pulsed Drain Current 2
Single Pulse Avalanche Energy 3
I DM
EAS
IAS
100
98
A
mJ
A
Avalanche Current
41
Total Power Dissipation 4
TC=25°C
P D
90
W
°C
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
36
°C / W
°C / W
1.4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-May-2014 Rev.A
Page 1 of 4
SPR45N10
45A , 100V , RDS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Min.
Typ. Max.
Parameter
Unit
Teat Conditions
Static
100
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
gfs
-
-
-
V
V
VGS=0, ID= 250µA
2.5
4.5
VDS=VGS, ID=250µA
VDS=5V, ID=30A
Forward Tranconductance
Gate-Source Leakage Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
27
-
S
IGSS
-
±100
nA
VGS= ±20V
-
1
5
22
30
3.8
-
VDS=80V, VGS=0, TJ=25°C
VDS=80V, VGS=0, TJ=55°C
VGS=10V, ID=30A
VGS=7V, ID=15A
Drain-Source Leakage Current
IDSS
µA
-
19
Static Drain-Source On-Resistance 2
RDS(ON)
mΩ
25
Gate Resistance
Rg
Qg
1.9
27.6
11.4
7.9
15.6
17.2
16.8
9.2
1890
268
67
Ω
f =1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 2
Rise Time
ID=30A
VDS=80V
VGS=10V
Qgs
Qgd
Td(on)
Tr
-
nC
nS
pF
-
-
VDD=50V
ID=30A
-
V
GS=10V
Turn-off Delay Time
Fall Time
Td(off)
Tf
-
RG=3.3Ω
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
VGS =0
VDS=15V
f =1.0MHz
-
-
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
53
-
-
mJ VDD=25V, L=0.1mH, IAS=30A
Source-Drain Diode
Diode Forward Voltage 2
Continuous Source Current 1,6
Pulsed Source Current 2,6
Reverse Recovery Time
VSD
IS
-
-
-
-
-
-
-
1
45
100
-
V
A
IS=1A, VGS=0V
VG=VD=0, Force Current
ISM
trr
-
A
34
47
nS
nC
IF=30A, dl/dt=100A/µs,
TJ=25°C
Reverse Recovery Charge
Note:
Qrr
-
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=41A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-May-2014 Rev.A
Page 2 of 4
SPR45N10
45A , 100V , RDS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-May-2014 Rev.A
Page 3 of 4
SPR45N10
45A , 100V , RDS(ON) 22 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-May-2014 Rev.A
Page 4 of 4
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