SSD408 [SECOS]
N-Channel Enhancement Mode Power Mos.FET; N沟道增强模式电源Mos.FET
| 型号： | SSD408 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：430K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSD408
Ω
18A, 30V,RDS(ON)18m
Elektronische Bauelemente
N-Channel Enhancement Mode PowerMos.FET
RoHS Compliant Product
Description
TO-252
The SSD408 uses advanced trench technology to provide
excellent on-resistance and low gate charge.
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications and suited for use as a load switch or in
PWM applications.
Features
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Characteristic
D
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
2.80
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.20
G
H
J
K
L
G
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
Unit
V
Drain-Source Voltage
30
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=25к
ID @TC=100к
IDM
18
A
14
A
70
A
Total Power Dissipation
PD @TC=25к
60
0.4
W
Linear Derating Factor
W/к
mJ
A
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
60
35
Tj, Tstg
-55 ~ +175
к
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.5
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
50
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSD408
Ω
18A, 30V,RDS(ON)18m
Elektronische Bauelemente
N-Channel Enhancement Mode PowerMos.FET
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-
Symbol Min.
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250uA
30
-
-
V
BVDSS
VGS(th)
gfs
1.0
-
-
2.5
V
VDS=VGS, ID=250uA
VDS=5V, ID=18A
VGS= ±20V
25
-
-
S
-
±100
nA
uA
uA
IGSS
-
-
1
5
18
27
25
-
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=18A
VGS=4.5V, ID=10A
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-
-
Static Drain-Source On-Resistance3
mꢀ
RDS(ON)
-
-
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
19.8
2.5
3.5
4.5
3.9
17.4
3.2
Qg
Qgs
Qgd
Td(on)
Tr
ID=18A
VDS=15V
nC
-
VGS=10V
-
-
-
-
VDS=15V
GS=10V
-
-
V
ns
RG=3ꢀ
RL=0.82ꢀ
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
1040 1250
Ciss
Coss
Crss
VGS=0V
VDS=15V
f=1.0MHz
pF
-
180
110
-
-
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
Unit
V
Test Conditions
-
-
-
1.0
18
-
VSD
IS=1A, VGS=0V
Continuous Source Current (Body Diode)
Reverse Recovery Time3
Reverse Recovery Charge
-
-
-
A
IS
Trr
Qrr
19
8
ns
nC
IS=18A, VGS=0V
dI/dt=100A/ꢁs
-
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=25V, L=0.1mH, RG=25ꢀ.
3. Pulse widthЉ300us, duty cycleЉ2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSD408
Ω
18A, 30V,RDS(ON)18m
Elektronische Bauelemente
N-Channel Enhancement Mode PowerMos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
Fig 6. Type Power Dissipation
Fig 5. Maximum Drain Current
v.s. Case Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SSD408
Ω
18A, 30V,RDS(ON)18m
Elektronische Bauelemente
N-Channel Enhancement Mode PowerMos.FET
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 9. Gate Charge Characteristics
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Fig 11. Normalized Maximum Transient Thermal Impedance
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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