SSG4536C_15 [SECOS]
N & P-Ch Enhancement Mode Power MOSFET;
| 型号： | SSG4536C_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N & P-Ch Enhancement Mode Power MOSFET |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4536C
N-Ch: 7.1A, 30V, RDS(ON) 28 mΩ
P-Ch: -6A, -30V, RDS(ON) 39 mΩ
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs
B
utilize a high cell density trench process to provide low
RDS(on) and to ensure minimal power loss and heat
dissipation.
L
D
M
FEATURES
ꢀ
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space
A
C
J
N
E
ꢀ
K
H
G
F
ꢀ
ꢀ
Fast switching speed
High performance trench technology
Millimeter
Min. Max.
5.8 6.20
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
H
J
K
L
M
N
0.35
0.51
4.80
3.80
0°
5.00
4.00
8°
0.375 REF.
APPLICATION
45°
1.35
0.10
1.75
0.25
DC-DC converters and power management in
0.50
0.19
0.93
0.25
0.25 REF.
portable and battery-powered products such as computers,.
printers, PCMCIA cards, cellular and cordless telephones
G
1.27 TYP.
Top View
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOP-8
2.5K
13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Rating
Parameter
Symbol
Unit
N-CH
30
P-CH
-30
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
V
A
±20
7.1
5.8
20
±20
-6
TA = 25°C
TA = 70°C
Continuous Drain Current 1
ID
-4.9
-20
A
Pulsed Drain Current 2
IDM
IS
A
A
Continuous Source Current (Diode Conduction) 1
1.3
-1.3
TA = 25°C
Total Power Dissipation 1
2.1
1.3
W
W
°C
PD
TA = 70°C
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
Thermal Resistance Ratings
t≦10 sec
Steady State
62.5
110
°C / W
°C / W
Maximum Junction-to-Ambient 1
RθJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev. A
Page 1 of 2
SSG4536C
N-Ch: 7.1A, 30V, RDS(ON) 28 mΩ
P-Ch: -6A, -30V, RDS(ON) 39 mΩ
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Ch
Symbol
Min.
Typ.
Static
Max.
Unit
Teat Conditions
N
P
N
P
N
P
N
P
1
-
-
-
VDS=VGS, ID=250µA
Gate Threshold Voltage
VGS(th)
V
nA
µA
A
-1
-
±100
±100
1
VDS=VGS, ID= -250µA
VDS=0, VGS=20V
-
-
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
IGSS
-
-
VDS=0, VGS= -20V
VDS=24V, VGS=0
-
-
IDSS
-
-
-1
VDS= -24V, VGS=0
VDS=5V, VGS=10V
VDS= -5V, VGS= -10V
VGS=10V, ID=7.1A
VGS=4.5V, ID=5.8A
VGS= -10V, ID= -6A
VGS= -4.5V, ID= -4.9A
VDS=15V, ID=6.9A
VDS= -15V, ID= -5.2A
20
-
-
ID(on)
-20
-
-
-
-
-
-
-
-
-
28
42
39
59
-
N
P
-
Drain-Source On-Resistance 1
Forward Transconductance 1
RDS(ON)
mΩ
-
-
N
P
25
gfs
S
10
-
Dynamic 2
N
P
N
P
N
P
N
P
N
P
N
P
N
P
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
10
1.1
2.2
1.4
1.7
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
N-Channel
ID=6.9A, VDS=15V, VGS=10V
nC
P-Channel
ID= -5.2A, VDS= -15V, VGS= -10V
10
5
N-Channel
VDD=15V, VGS=10V
ID=1A, RGEN=6Ω
2.8
23
53.6
3
nS
P-Channel
VDD= -15V, VGS= -10V
ID= -1A, RGEN= 6Ω
Turn-Off Delay Time
Td(off)
Fall Time
Notes
Tf
46
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Sep-2012 Rev. A
Page 2 of 2
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