SSL4407 [SECOS]
P-Channel Enhancement Mode Power Mos.FET; P沟道增强模式电源Mos.FET
| 型号： | SSL4407 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSL4407
Ω
-50A, -30V,RDS(ON) 14m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSL4407 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-263 is universally preferred for allcommercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters and high efficiency switching
circuit.
Features
* Lower On-Resistance
* Simple Drive Requirement
* Fast Switching Characteristics
D
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.30
0.5
Min.
Max.
1.45
1.47
9.0
A
b
L4
c
4.40
0.76
0.00
0.36
c2
b2
D
1.25
1.17
8.6
e
2.54 REF.
G
L3
L1
E
1.50 REF.
L
ꢀ
θ
L2
14.6
15.8
2.29
9.80
2.79
10.4
0o
8o
1.27 REF.
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
-30
±25
-50
-32
-180
54
Gate-Source Voltage
VGS
V
A
ID@TA=25oC
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current1
0oC
ID@TA=10
A
A
IDM
oC
Total Power Dissipation
PD@TA=25
W
0.4
W/oC
oC
Linear Derating Factor
-55~+150
Tj, Tstg
Operating Junction and Storage Temperature Range
Thermal Data
Symbol
Rthj-c
Ratings
Unit
Parameter
o
2.3
C /W
Max.
Max.
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
oC /W
62
Rthj-a
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSL4407
Ω
-50A, -30V,RDS(ON) 14m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Symbol
BVDSS
Min.
Typ.
Unit
Parameter
Max.
Test Condition
VGS=0V, ID=-250uA
_
_
-
V
Drain-Source Breakdown Voltage
30
-
Reference to 25oC, ID=-1mA
V/oC
V
_
_
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
0.01
_
-3.0
100
-1
-1.0
_
VDS=VGS, ID=-250uA
_
_
_
IGSS
nA
Gate-Source Leakage Current
VGS= 25V
o
_
_
VDS=-30V,VGS=0
VDS=-24V,VGS=0
C
Drain-Source Leakage Current (Tj=25 )
uA
uA
IDSS
o
C
)
Drain-Source Leakage Current(Tj=150
-25
14
_
_
_
_
_
VGS=-10V, ID=-24A
VGS=-4.5V, ID=-16A
Static Drain-Source On-Resistance2
RDS(ON)
mΩ
23
Total Gate Charge2
Gate-Source Charge
Qg
Qgs
Qgd
Td(ON)
Tr
35
5
60
_
ID=-24A
_
_
VDS=-24V
VGS=-4.5V
nC
_
_
Gate-Drain ("Miller") Charge
26
11
64
63
_
_
Turn-on Delay Time2
Rise Time
VDD=-15 V
ID=-24A
_
nS
VGS=-10V
_
_
_
Td(Off)
Turn-off Delay Time
Ω
RG=3.3
Ω
RD=0.63
_
_
_
Fall Time
T
f
100
Input Capacitance
Ciss
Coss
Crss
Gfs
2120
3390
_
VGS=0V
VDS=-25V
f=1.0MHz
Output Capacitance
pF
S
630
550
36
_
_
_
_
Reverse Transfer Capacitance
Forward Transconductance
VDS=-10V, ID=-24A
Source-Drain Diode
Min.
Typ.
Parameter
Symbol
VSD
Max.
Test Condition
Unit
_
_
Forward On Voltage2
-1.2
V
IS=-24A,VGS=0V.
_
Reverse Recovery Time2
_
Trr
39
nS
nC
IS=-24A,VGS=0V.
_
_
dl/dt=100A/us
8
3
Reverse Recovery Change
Qrr
Notes:
1.
2.
Pulse width limited by safe operating area.
≦
≦
Pulse width 300us, dutycycle 2%.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSL4407
Ω
-50A, -30V,RDS(ON) 14m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
SSL4407
Ω
-50A, -30V,RDS(ON) 14m
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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