SSP7444N [SECOS]
N-Channel Enhancement MOSFET;
| 型号： | SSP7444N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement MOSFET |
| 文件： | 总4页 (文件大小：477K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSP7444N
34A, 40V, RDS(ON) 3 mΩ
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8PP
FEATURES
ꢀ
ꢀ
ꢀ
Low RDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
APPLICATIONS
ꢀ
ꢀ
ꢀ
White LED boost converters.
Automotive Systems.
Industrial DC/DC Conversion Circuits.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOP-8PP
3K
13 inch
Millimeter
REF.
Millimeter
Min. Max.
10
REF.
Min.
Max.
1.00
5.60
0.25
3.91
6.15
0.24
4.45
A
B
C
D
E
F
0.85
5.40
0.15
3.71
5.95
0.08
4.25
θ
b
c
d
e
f
0
°
°
5.10
0.30
5.30
0.50
1.27BSC
5.45
0.20
1.10
5.65
0.35
-
G
g
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
34
V
TA=25°C
TA=70°C
Continuous Drain Current 1
ID
A
27
Pulsed Drain Current 2
IDM
IS
100
8.1
A
A
Continuous Source Current (Diode Conduction) 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
5
Power Dissipation 1
PD
W
°C
3.2
TJ, TSTG
-55~150
Thermal Resistance Data
t≦10 sec
RθJA
Steady State
25
65
Maximum Junction to Ambient 1
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Nov-2013 Rev. A
Page 1 of 4
SSP7444N
34A, 40V, RDS(ON) 3 mΩ
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ Max
Unit
Test conditions
Static
Gate-Threshold Voltage
VGS(th)
IGSS
1
-
-
-
V
VDS=VGS, ID=250µA
Gate-Body Leakage
-
±100
nA
VDS=0, VGS= ±20V
VDS=32V, VGS=0
-
-
1
25
-
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
IDSS
ID(ON)
µA
A
-
-
VDS=32V, VGS=0,TJ=55°C
VDS=5V, VGS=10V
VGS=10V, ID=20A
VGS=4.5V, ID=16A
VDS=15V,,ID=20A
IS=4.1A, VGS=0
40
-
-
-
3
5
-
RDS(ON)
mΩ
-
-
Forward Transconductance 1
Diode Forward Voltage
gFS
-
25
0.69
S
V
VSD
-
-
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
-
-
-
49
-
-
-
-
-
-
-
-
-
-
ID=20A
VDS=20V
VGS=4.5V
nC
nS
pF
12
23
Qgd
Td(ON)
Tr
19
ID=20A, VDS=20V
VGEN=10V
RL=1Ω, RGEN=6Ω
35
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
209
88
Input Capacitance
Output Capacitance
Ciss
6861
791
653
VDS=15V, VGS=0, f=1MHz
Coss
Crss
Reverse Transfer Capacitance
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Nov-2013 Rev. A
Page 2 of 4
SSP7444N
34A, 40V, RDS(ON) 3 mΩ
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Nov-2013 Rev. A
Page 3 of 4
SSP7444N
34A, 40V, RDS(ON) 3 mΩ
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Nov-2013 Rev. A
Page 4 of 4
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