SSP7464N [SECOS]
N-Channel Enhancement MOSFET; N沟道增强型MOSFET
| 型号： | SSP7464N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement MOSFET |
| 文件： | 总2页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSP7464N
6.4 A, 60 V, RDS(ON) 82 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8PP
DESCRIPTION
B
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
D
C
θ
e
E
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board
space.
A
b
d
g
Fast switching speed.
High performance trench technology.
F
G
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
PRODUCT SUMMARY
PRODUCT SUMMARY
A
B
C
D
E
F
1.00
5.70
0.20
3.61
5.40
0.08
3.60
1.10
5.80
0.30
3.98
6.10
0.20
3.99
θ
b
d
e
g
0°
0.33
12°
0.51
1.27BSC
1.35
1.10
1.75
-
ID(A)
6.4
5.4
Drain
VDS(V)
RDS(on) (m
82@VGS= 10V
115@VGS= 4.5V
G
60
Gate
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
RATING
UNIT
60
V
Gate-Source Voltage
VGS
20
V
TA=25°C
TA=70°C
6.4
Continuous Drain Current A
ID
A
5.3
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
IDM
IS
20
A
A
2.3
TA=25°C
TA=70°C
5.0
Power Dissipation A
PD
W
3.2
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
THERMAL RESISTANCE DATA
t≦10 sec
RθJA
25
65
Maximum Junction to Ambient A
°C / W
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Jul-2010 Rev. A
Page 1 of 2
SSP7464N
6.4 A, 60 V, RDS(ON) 82 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
SYMBO
PARAMETER
MIN TYP MAX UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
100
1
V
VDS = VGS, ID = 250μA
-
-
nA VDS = 0V, VGS= 12V
-
VDS = 48V, VGS= 0V
μA
Zero Gate Voltage Drain Current
On-State Drain Current A
IDSS
-
-
5
VDS = 48V, VGS= 0V, TJ=55°C
ID(ON)
40
-
-
-
A
VDS = 5V, VGS= 10V
VGS= 10V, ID = 2A
VGS= 4.5V, ID = 2A
VDS= 15V,,ID = 6A
IS= 2.3A, VGS= 0V
-
82
115
-
Drain-Source On-Resistance A
RDS(ON)
mΩ
-
-
Forward Transconductance A
Diode Forward Voltage
gFS
-
40
0.7
S
V
VSD
-
-
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
-
-
-
-
-
-
-
15
-
-
-
-
-
-
-
ID= 6A
3
nC VDS= 15V
VGS= 4.5V
Qgd
5
Td(ON)
Tr
15
10
54
26
ID= 1A, VDD= 15V
nS VGEN= 10V
Turn-Off Delay Time
Fall Time
Td(OFF)
Tf
RL= 6Ω
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Jul-2010 Rev. A
Page 2 of 2
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