SSRF06N60SL_15 [SECOS]
N-Ch Enhancement Mode Power MOSFET;
| 型号： | SSRF06N60SL_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总5页 (文件大小：600K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSRF06N60SL
6A , 600V , RDS(ON) 1.5
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
ITO-220
DESCRIPTION
The SSRF06N60SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
B
N
D
E
M
J
A
C
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
H
L
Green Device Available
K
L
G
F
2
Drain
Millimeter
Millimeter
Min. Max.
REF.
REF.
1
Gate
Min.
Max.
16.50
10.50
14.00
5.10
3.2
A
B
C
D
E
F
14.60
9.50
12.60
4.30
2.30
2.30
0.30
H
J
K
L
M
N
2.70
0.90
0.50
2.34
2.40
φ 3.0
4.00
1.50
0.95
2.74
3.60
φ 3.4
3.10
0.75
3
Source
G
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
600
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±30
V
6
A
TC=25°C
Continuous Drain Current
Pulsed Drain Current
ID
TC=100°C
3.8
A
IDM
PD
24
A
TC=25°C
Derate above 25°C
42
Total Power Dissipation
W
0.34
343
Single Pulse Avalanche Energy 1
EAS
mJ
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
Notes:
RθJA
RθJC
120
°C / W
°C / W
2.98
1. L=30mH,IAS=4.4A, VDD=105V, RG=25Ω, Starting TJ =25°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Sep-2013 Rev. A
Page 1 of 5
SSRF06N60SL
6A , 600V , RDS(ON) 1.5
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Typ. Max.
Unit
Teat Conditions
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Static Drain-Source On-Resistance
Total Gate Charge 1.2
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
600
-
-
V
V
VGS=0, ID= 250µA
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
VDS=VGS, ID=250µA
VGS= ±30V
-
±100
nA
µA
Ω
-
1
VDS=600V, VGS=0
VGS=10V, ID=3A
1.35
13.32
4.13
4.19
18.53
42.67
33.2
28.13
690.7
83.6
2.7
1.5
-
-
-
-
-
-
-
-
-
-
ID=6A
VDS=480V
VGS=10V
Gate-Source Charge 1.2
Gate-Drain Change 1.2
Turn-on Delay Time 1.2
Rise Time 1.2
Qgs
nC
nS
pF
Qgd
Td(on)
Tr
Td(off)
Tf
VDD=300V
ID=6A
RG=25 Ω
Turn-off Delay Time 1.2
Fall Time 1.2
Input Capacitance
Ciss
VGS =0
VDS=25V
f =1.0MHz
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage
VSD
-
-
-
-
-
-
1.4
6
V
A
IS=6A, VGS=0
Integral Reverse P-N
Junction Diode in the
MOSFET
Continuous Source Current
Pulsed Source Current
IS
-
-
ISM
Trr
Qrr
24
-
A
Reverse Recovery Time 1.
Reverse Recovery Charge 1.
488
3
ns
µC
IS=6A,VGS=0,
dlF/dt=100A/µS
-
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Sep-2013 Rev. A
Page 2 of 5
SSRF06N60SL
6A , 600V , RDS(ON) 1.5
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Sep-2013 Rev. A
Page 3 of 5
SSRF06N60SL
6A , 600V , RDS(ON) 1.5
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Sep-2013 Rev. A
Page 4 of 5
SSRF06N60SL
6A , 600V , RDS(ON) 1.5
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
TYPICAL TEST CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Sep-2013 Rev. A
Page 5 of 5
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