SG-636PTG33.00000MC0 [SEIKO]

IC,CRYSTAL OSCILLATOR,1-CHANNEL,2.21675MHZ-33MHZ,DIP,4PIN,PLASTIC;


型号：	SG-636PTG33.00000MC0
厂家：	SEIKO EPSON CORPORATION
描述：	IC,CRYSTAL OSCILLATOR,1-CHANNEL,2.21675MHZ-33MHZ,DIP,4PIN,PLASTIC
文件：	总5页 (文件大小：329K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Crystal oscillator

CRYSTAL OSCILLATOR

SPXO

SG-636 series

•Frequency range

•Supply voltage

•Function

2.21675 MHz to 135 MHz

2.5 V / 3.3 V / 5.0 V

Output enable(OE) Standby(_ST

2.7 mm Max.

)

•Thickness

•Lead(Pb)-free

Contains high melting temperature type

solder (Pb85 %) exempted by RoHS directive.

Actual size

Specifications (characteristics)

Specifications

Item

Symbol

Remarks

PTF

PCE / SCE

2.21675 MHz

to 40.000 MHz

3.3 V ±0.3 V

PDE

2.21675 MHz

to 41.000 MHz

41.001 MHz

to 70.000 MHz

2.21675 MHz

to 40.000 MHz

2.5 V ±0.25 V

Output frequency range

Supply voltage

Storage

VCC

5.0 V ±0.5 V

-55 °C to +100 °C

Stored as bare product after unpacking

T_stg

Temperature temperature

range

Operating

-20 °C to +70 °C

C: ±100 × 10^-6

T_use

temperature

Frequency tolerance

Current consumption

Output disable current

Stand-by current

-20 °C to +70 °C

No load condition

OE=GND

F_tol(osc)

ICC

17 mA Max.

10 mA Max.

35 mA Max.

20 mA Max.

9 mA Max.

5 mA Max.

2 µA Max.

5 mA Max.

3 mA Max.

I_dis

I_std

=GND(SCE)

40 % to 60 %

45 % to 55 %

CMOS load:50 % VCC level

TTL load: 1.4 V level

Symmetry

SYM

45 % to 55 %

I^OH=-8 mA(PTF)/-4 mA(PH,SCE,PCE),

/-3.2 mA(PDE)

High output voltage

Low output voltage

VOH

VCC-0.4 V Min.

0.4 V Max.

I^OL=16 mA(PTF)/4mA(PH,SCE,PCE)

/3.2 mA(PDE)

VOL

Output load condition

(TTL)

L_TTL

L_CMOS

10 TTL Max.

50 pF Max.

L_CMOS ≤ 15 pF

Output load condition

(CMOS)

20 pF Max.(≤55 MHz)

15 pF Max.(>55 MHz)

2.0 V Min.

0.8 V Max.

30 pF Max.

80 % VCC Min.

20 % VCC Max.

5 ns Max.

15 pF Max.

Output enable /

disable input voltage

VIH

V^IL

OE Terminal,

Terminal (SCE)

7 ns Max.

5 ns Max.

4 ms Max.

CMOS load:20 % VCC to 80 % VCC level

TTL load:0.4 V to 2.4 V level

Output rise and fall time

tr / tf

Oscillation start up time

Frequency aging

OSC

10 ms Max.

±5 × 10^-6/ year Max.

4 ms Max.

Time at minimum supply voltage to be 0 s

+25 °C, VCC=5.0 V/3.3 V/2.5 V, First year

F_aging

Specifications (characteristics)

Specifications

PHG

Item

Symbol

Remarks

PTG

PCG / SCG

Output frequency range

Supply voltage

2.21675 MHz to 33.000 MHz *1

VCC

4.5 V to 5.5 V

2.7 V to 3.6 V

Storage

-55 °C to +100 °C

Stored as bare product after unpacking

T_stg

Temperature temperature

range

Operating

-20 °C to +70 °C

T_use

temperature

Frequency tolerance

Current consumption

Output disable current

Stand-by current

F_tol(osc)

ICC

B: ±50 × 10^-6

25 mA Max.

20 mA Max.

C: ±100 × 10^-6

-20 °C to +70 °C

12 mA Max.

10 mA Max.

50 µA Max.

No load condition

I_dis

OE=GND (PTG,PHG,PCG)

I_std

=GND (SCG)

45 % to 55 %

50 % VCC level, L_CMOS=25 pF

1.4 V level, L_CMOS=25 pF

IOH=-8 mA

Symmetry

SYM

VOH

VOL

40 % to 60 %

2.4 V Min.

VCC-0.4 V Min.

0.4 V Max.

High output voltage

Low output voltage

VCC-0.4 V Min.

25 pF Max.

IOH=-16 mA

IOL=8 mA

0.4 V Max.

IOL=16 mA

Output load condition

Output enable /

L_CMOS

VIH

2.0 V Min.

0.8 V Max.

70 % VCC Min.

20 % VCC Max.

4 ns Max.

OE Terminal ,

Terminal

disable input voltage

V^IL

3.4 ns Max.

12 ms Max.

20 % VCC to 80 % VCC level, L_CMOS ≤ 25 pF

TTL load:0.4 V to 2.4 V level, L_CMOS ≤ 25 pF

t=0 at 90 % VCC

Output rise and fall time

tr / tf

2.4 ns Max.

Oscillation start up time

Frequency aging

OSC

±5 × 10^-6/ year Max.

+25 °C, VCC=5.0 V/ 3.3 V, First year

F_aging

*1 4.1250 MHz < fo < 4.4336 MHz, 8.2500 MHz < fo < 8.8672 MHz, 16.500 MHz < fo < 17.7344 MHz : Unavailable

http://www.epsontoyocom.co.jp

Crystal oscillator

Specifications (characteristics)

Specifications

PHW / SHW

Item

Symbol

Remarks

PTW / STW

PCW / SCW

Output frequency range

Supply voltage

32.001 MHz to 135.000 MHz

VCC

5.0 V ±0.5 V

3.3 V ±0.3 V

Storage

-55 °C to +100 °C

Stored as bare product after unpacking

T_stg

Temperature temperature

range

Operating

-20 °C to +70 °C

T_use

temperature

Frequency tolerance

Current consumption

Output disable current

Stand-by current

F_tol(osc)

ICC

B: ±50 × 10^-6

C: ±100 × 10^-6

-20 °C to +70 °C

45 mA Max.

30 mA Max.

28 mA Max.

16 mA Max.

No load condition( Max. frequency range )

OE=GND (PTW,PHW,PCW)

I_dis

I_std

50 µA Max.

40 % to 60 %

=GND (STW,SHW,SCW)

50 % VCC level, L_CMOS=Max.

1.4 V level, L_CMOS=Max.

Symmetry

SYM

40 % to 60 %

5 TTL Max.

High output voltage

Low output voltage

Output load condition

(TTL)

VOH

VOL

VCC-0.4 V Min.

IOH=-16 mA(PTW , STW , PHW , SHW)/-8 mA(PCW , SCW)

IOL= 16 mA(PTW , STW , PHW , SHW)/ 8 mA(PCW , SCW)

0.4 V Max.

L_TTL

fO≤ 90 MHz, Max.Supply voltage.

Output load condition

(CMOS)

L_CMOS

15 pF Max.

Max.frequency, Max.Supply voltage.

Output enable /

disable input voltage

VIH

V^IL

2.0 V Min.

0.8 V Max.

70 % VCC Min.

20 % VCC Max.

OE Terminal ,

Terminal

4 ns Max.

20 % VCC to 80 % VCC level, L_CMOS ≤ Max.

0.4 V to 2.4 V level

Output rise and fall time

tr / tf

4 ns Max.

Oscillation start up time

Frequency aging

OSC

10 ms Max.

Time at minimum supply voltage to be 0 s

+25 °C, VCC=5.0 V / 3.3 V, First year

±5 × 10^-6/ year Max.

F_aging

*1 “C” tolerance : 40 MHz<f0≤135 MHz

External dimensions

(Unit:mm)

Footprint (Recommended)

(Unit:mm)

10.5 Max.

Pin map

Connection

OE or ST

GND

E 18.4320C

OUT

PTF9352A

1.3

Vcc

(1.0)

0.51

5.08

0.05Min.

3.6

Metal may be exposed on the top or bottom of this product.

This will not affect any quality, reliability or electrical spec.

Note.

5.08

OE pin (PTF,PH,PCE,PDE,PTW,PHW,PCW,PTG,PHG,PCG)

OE pin = "H" or "open" : Specified frequency output.

OE pin = "L" : Output is high impedance.

ST pin (STW, SHW, SCW,SCG)

ST pin = "H" or "open" : Specified frequency output.

ST pin = "L" : Output is low level (weak pull - down),oscillation stops.

ST pin (SCE)

ST pin = "H" or "open" : Specified frequency output.

ST pin = "L" : Output is low level ,oscillation stops.

http://www.epsontoyocom.co.jp

Alex Matsunaga, 04:18 PM 9/21/2006, RE: RoHS C of C

Subject: RE: RoHS C of C

Date: Thu, 21 Sep 2006 16:18:03 -0700

From: "Alex Matsunaga" <amatsuna@eea.epson.com>

To: Sylvia Patiño <spatino@qualcomm.com>

Hi Sylvia,

Should be: SG-636PCG 25.000MB3: RoHS

Thanks !!!

Alex

From: Sylvia Patiño [mailto:spatino@qualcomm.com]

Sent: Thursday, September 21, 2006 3:32 PM

To: Alex Matsunaga

Subject: Re: RoHS C of C

Thank you Alex! Also, what is the correct ROHS ordering part number for:

SG-636PCG25.0000MB3

If there is not part number change, what is the ROHS conversion date?

spatino

At 03:28 PM 9/21/2006, you wrote:

Hi Sylvia,

Good afternoon !!

Please see the attached for our SG-636 RoHS version.

Thanks !!!

Regards,

Alex

Printed for Sylvia Patiño <spatino@qualcomm.com>

RoHS Materials Content Declaration

By:

Epson Electronics America, Inc.

150 River Oaks Parkway

San Jose, CA 95134

SG-636 (RoHS) OSCILLATORS

Date: January 26, 2006

Per EU Directive 2002/95/EC of January 27, 2003, the RoHS directive, Epson Toyocom hereby declares

whether or not the following listed materials or substances are contained in the aforementioned Epson

Toyocom products exceeding the threshold levels listed. A “YES” response indicates that the material/ or

substance(s) is found in the aforementioned products above the threshold level. A “NO” response indicates

that, to the best of Epson Toyocom’s knowledge, that material or substance(s) is not found in the

aforementioned products above the threshold level listed.

Material/Substance

--------------------------------------------------

Cadmium

Hexavalent Chromium

Lead (exception: Lead in glass & ceramic) 0.1%

Mercury

Polybrominated Biphenyls

Polybrominated Diphenylethers

Threshold Level*

---------------------

0.01%

YES

------

____

------

0.1%

* Maximum concentration by weight in homogenous materials.

* This product contains high melting temperature solder internally which is exempted from the RoHS

directive (i.e. tin-lead solder alloys containing more than 85% lead)

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