2N6796 [SEME-LAB]
TMOS FET TRANSISTOR N - CHANNEL; TMOS FET晶体管N - CHANNEL
| 型号： | 2N6796 |
| 厂家： | 
SEME LAB |
| 描述： | TMOS FET TRANSISTOR N - CHANNEL |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6796
MECHANICAL DATA
Dimensions in mm (inches)
TMOS FET TRANSISTOR
N – CHANNEL
8
9
.
.
8
4
9
0
(
(
0
0
.
.
3
3
5
7
)
)
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
6
6
.
.
1
6
0
0
(
(
0
0
.
.
2
2
4
6
0
0
)
)
0
.
8
9
a
m
x
.
)
(
0
0
.
0
3
5
1
2
.
7
(
0
.
5
0
0
)
m
i
n
.
7
8
.
.
7
5
5
1
(
(
0
0
.
.
3
3
0
3
5
5
)
)
d
i
a
.
FEATURES
5
.
0
8
(
0
.
2
0
0
)
• V
= 100V
t
y
p
.
DSS
2
.
5
4
• I = 8A
2
(
0
.
1
0
0
)
D
1
3
0
1
.
.
6
1
6
4
(
(
0
0
.
.
0
0
2
4
6
5
)
)
Ω
= 0.18
DSON
0
0
.
.
7
8
1
6
(
(
0
0
.
.
0
0
2
3
8
4
)
)
• R
4
5
°
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain Case
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
V
V
I
Drain–Source Voltage
100V
100V
DSS
DGR
GS
Drain–Gate Voltage (R = 1.0mΩ)
GS
Gate–Source Voltage
Drain Current Continuous
Drain Current Pulsed
±20V
8.0A
D
I
32A
DM
P
Total Device Dissipation @ T = 25°C
25W
D
C
Derate above 25°C
0.2W/ °CW
–55 to +150°C
T , T
Operating and Storage Junction Temperature Range
J
STG
THERMAL CHARACTERISTICS
R
R
Thermal Resistance Junction to Case
5.0°CW
175°CW
θJC
θJC
L
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.5mm from Case for
10 s
T
300°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Prelim. 11/98
Website http://www.semelab.co.uk
2N6796
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
Typ.
Max. Unit
OFF CHARACTERISTICS
V
Drain–Source Breakdown Voltage
V
V
V
= 0
I = 0.25mA
100
V
(BR)DSS
GS
DS
DS
D
=Rated V
= 80V
V
= 0
GS
250
DSS
I
Zero Gate Voltage Drain Current
V
= 0
µA
DSS
GS
1000
T = 125°C
J
I
I
Gate–Body Leakage Current,Forward
Gate–Body Leakage Current,Reverse
V
V
= 0
= 0
V
V
= 20V
100
nA
GSSF
DS
GS
GS
= –20V
–100
GSSR
DS
ON CHARACTERISTICS
V
Gate Thresshold Voltage
V
V
= V
I = 0.5mA
2.0
3.0
4.0
0.18
0.35
1.56
9.0.
V
GS(th)
DS
GS
D
= 10V
I = 5.0A
GS
D
r
Static Drain–Source On–Resistance
Ω
DS(on)
T = 125°C
A
V
Drain–Source On–Voltage
Forward Transconductance
V
V
= 10V
= 15V
I = 8.0A
V
DS(on)
GS
D
gf
I = 5.0A
mhos
GS
D
s
DYNAMIC CHARACTERISTICS
C
C
C
Input Capacitance
350
150
50
900
500
150
iss
V
= 25V
V
= 0
GS
DS
Output capacitance
pF
ns
oss
rss
f = 1.0MH
Z
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
t
t
t
t
30
75
40
45
on
Turn–Off Time
V
= 30V
I = 5.0A
off
DD
D
RiseTime
R
= 50 ohms
r
f
gen
FallTime
SOURCE DRAIN DIODE CHARACTERISTICS*
V
Diode Forward Voltage
0.75
1.5
Negligible
300
V
SD
I = Rated I
S
D(on)
t
t
Forward turn-On Time
on
rr
V
= 0
ns
GS
Reverse Recovery Time
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Prelim. 11/98
Website http://www.semelab.co.uk
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