2N6800_01 [SEME-LAB]

N–CHANNEL ENHANCE-MENT POWER MOSFET; N沟道ENHANCE - MENT功率MOSFET
2N6800_01
型号: 2N6800_01
厂家: SEME LAB    SEME LAB
描述:

N–CHANNEL ENHANCE-MENT POWER MOSFET
N沟道ENHANCE - MENT功率MOSFET

文件: 总2页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2N6800  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL ENHANCE-  
8.64 (0.34)  
9.40 (0.37)  
MENT  
8.01 (0.315)  
9.01 (0.355)  
POWER MOSFET  
4.06 (0.16)  
4.57 (0.18)  
BVDSS 400V  
0.89  
(0.035)  
max.  
12.70  
(0.500)  
min.  
ID  
3.0A  
0.41 (0.016)  
0.53 (0.021)  
dia.  
RDS(on) 1.0  
5.08 (0.200)  
typ.  
FEATURES  
2.54  
(0.100)  
2
• AVALANCHE ENERGY RATED  
• HERMETICALLY SEALED  
• DYNAMIC dv/dt RATING  
1
3
0.74 (0.029)  
1.14 (0.045)  
0.71 (0.028)  
0.53 (0.021)  
• SIMPLE DRIVE REQUIREMENTS  
45°  
TO39 – Package (TO205AF)  
Pin 1 Source  
Pin 2 Gate  
Pin 3 Drain  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
V
Gate – Source Voltage  
Continuous Drain Current  
Continuous Drain Current  
20V  
3A  
GS  
I
I
I
(V = 10V , T  
= 25°C)  
D
GS  
case  
(V = 10V , T  
= 100°C)  
2A  
D
GS  
case  
1
Pulsed Drain Current  
12A  
DM  
P
Power Dissipation @ T = 25°C  
case  
25W  
D
Linear Derating Factor  
0.20W/°C  
4V/ns  
3
dv/dt  
T , T  
Peak Diode Recovery  
Operating and Storage Temperature Range  
Thermal Resistance Junction to Case  
Thermal Resistance Junction-to-Ambient  
–55 to 150°C  
5.0°C/W  
175°C/W  
J
stg  
R
R
θJC  
θJCA  
Notes  
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%  
2) @ V = 50V , L 0.100mH , R = 25, Peak I = 1.5A , Starting T = 25°C  
DD  
G
L
J
3) @ I 1.5A , di/dt 50A/µs , V BV  
, T 150°C , SUGGESTED R = 7.5Ω  
J G  
SD  
DD  
DSS  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 3097  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  
Issue 1  
2N6800  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
STATIC ELECTRICAL RATINGS  
Drain Source Breakdown Voltage  
Temperature Coefficient of  
Breakdown Voltage  
BV  
V
= 0  
I = 1mA  
400  
V
DSS  
GS  
D
BV  
T  
Reference to 25°C  
DSS  
0.37  
V/°C  
I = 1mA  
J
D
Static Drain to Source  
V
V
V
V
V
V
V
V
= 10V  
= 10V  
I = 2A  
1
GS  
GS  
DS  
DS  
DS  
GS  
GS  
GS  
D
R
DS(on)  
OnState Resistance  
I = 3A  
1.15  
D
V
g
Gate Threshold Voltage  
Forward Transconductance  
= V  
I = 250µA  
2
2
4
V
GS(th)  
GS  
D
()  
15V  
I
= 2A  
DS  
S(Ω  
fs  
= 0.8xMax Rating  
25  
250  
100  
100  
I
Zero Gate Voltage Drain Current  
µA  
DSS  
= 0  
T = 125°C  
J
I
I
Forward Gate Source Leakage  
Reverse Gate Source Leakage  
= 20V  
= 20V  
GSS  
nA  
GSS  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
C
C
V
V
= 0  
620  
200  
75  
iss  
GS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
= 25V  
pF  
nC  
oss  
rss  
f = 1MHz  
Q
Q
Q
19.1  
1
33  
5.8  
19.9  
30  
g
V
V
= 10V  
I = 3A  
D
GS  
Gate Source Charge  
Gate Drain (Miller) Charge  
TurnOn Delay Time  
Rise Time  
gs  
= Max Rating x 0.5  
DS  
6.7  
gd  
t
t
t
t
d(on)  
r
V
= 200V  
V
= 10V  
GS  
35  
DD  
ns  
TurnOff Delay Time  
Fall Time  
I = 3A  
R = 7.5Ω  
55  
d(off)  
f
D
G
35  
SOURCE – DRAIN DIODE CHARACTERISTICS  
I
I
Continuous Source Current  
3
S
A
V
2
Pulse Source Current  
12  
SM  
I = 3.0A  
T = 25°C  
J
S
V
Diode Forward Voltage  
1.4  
SD  
V
= 0  
GS  
t
Reverse Recovery TimeReverse  
Recovery Charge  
I = 3.0A  
T = 25°C  
700  
6.2  
rr  
F
J
ns  
Q
t
d / d 100A/µs V 50V  
i t DD  
rr  
Forward TurnOn Time  
Negligible  
µC  
on  
PACKAGE CHARACTERISTICS  
L
L
Internal Drain Inductance (from centre of drain pad to die)  
5
D
nH  
Internal Source Inductance (from centre of source pad to end of source bond wire)  
15  
S
Notes  
1) Pulse Test: Pulse Width 300µs, δ ≤ 2%  
2) Repetitive Rating Pulse width limited by maximum junction temperature.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
Document Number 3097  
Issue 1  
E-mail: sales@semelab.co.uk  
Website http://www.semelab.co.uk  

相关型号:

SI9130DB

5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY