BDS20SMD [SEME-LAB]
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES; PNP硅外延基地的TO220金属和SMD1陶瓷表贴封装
| 元器件型号： | BDS20SMD |
| 生产厂家： | 
SEME LAB
|
| 描述和应用： | SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| PDF文件： | 总2页 (文件大小：23K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：BDS20SMD参数 | |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| IHS 制造商 | SEMELAB LTD |
| 零件包装代码 | TO-276AB |
| 包装说明 | CHIP CARRIER, R-CBCC-N3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 风险等级 | 5.63 |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 5 A |
| 集电极-发射极最大电压 | 80 V |
| 配置 | DARLINGTON |
| 最小直流电流增益 (hFE) | 1000 |
| JEDEC-95代码 | TO-276AB |
| JESD-30 代码 | R-CBCC-N3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 8 MHz |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
BDS20 BDS20SMD
BDS21 BDS21SMD
MECHANICAL DATA
Dimensions in mm
1 0.6
0.8
4.6
16.5
3.6
Dia.
1 3 .5
1 0 .6
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
1.0
2 .5 4
BSC
2. 70
BSC
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
3 .6 0 (0 .1 4 2 )
M a x .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6
(0 .0 3 0 )
m in .
APPLICATIONS
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
2
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M
SMD1
- TO220 Metal Package - Isolated
- Ceramic Surface Mount Package
Pin 2
– Collector
Pin 3
– Emitter
Pin 1
– Base
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C(PK)
I
B
P
tot
T
stg
T
j
Semelab plc.
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Peak collector current
Base current
Total power dissipation at T
case
£
75°C
Storage Temperature
Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BDS20
NPN
80V
80V
5V
5A
0.1A
BDS21
PNP
–80V
–80V
–5V
–5A
–0.1A
50W
–65 to 200°C
200°C
Prelim. 7/00
BDS20 BDS20SMD
BDS21 BDS21SMD
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Test Conditions
V
CB
= 80V
V
CE
= 40V
V
EB
= 5V
I
C
= 30mA
I
C
= 3A
I
C
= 5A
I
C
= 3A
I
C
= 0.5A
I
C
= 3A
I
B
= 12mA
I
B
= 20mA
V
CE
= 3V
V
CE
= 3V
V
CE
= 3V
Min.
Typ.
Max.
0.2
0.5
2
Unit
mA
mA
mA
V
120
2
4
2.5
1000
1000
V
V
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
THERMAL DATA
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5°C/W
Max. 62.5°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00
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