BF257CSM4 [SEME-LAB]
SILICON PLANAR NPN HIGH; 硅平面NPN高
| 型号： | BF257CSM4 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON PLANAR NPN HIGH |
| 文件： | 总2页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF257CSM4
SILICON PLANAR NPN HIGH
VOLTAGE TRANSISTOR IN A
CERAMIC SURFACE MOUNT
PACKAGE
MECHANICAL DATA
Dimensions in mm (inches)
1.40 0.15
(0.055 0.006)
5.59 0.1ꢀ
(0.22 0.005)
0.25 0.0ꢀ
(0.01 0.001)
0.2ꢀ
(0.009)
rad.
3
4
2
0.2ꢀ
(0.009)
1
min.
FEATURES
• High Voltage
1.02 0.20
(0.04 0.00ꢁ)
2.0ꢀ 0.20
(0.0ꢁ 0.00ꢁ)
• Ceramic Surface Mount
• Screening Options Available
LCC3
PAD 1 = COLLECTOR PAD ꢀ = EMITTER
PAD 2 = N/C PAD 4 = BASE
ABSOLUTE MAXIMUM RATINGS
V
V
V
Collector - Base Voltage (I = 0 )
160V
160V
5V
CBO
CEO
EBO
E
Collector - Emitter Voltage (I = 0)
B
Emitter Base Voltage (I = 0)
C
I
I
P
T
T
Collector Current
Collector Peak Current
Total Power Dissipation at T
Storage Temperature
Junction Temperature
100mA
200mA
5W
C
CM
50°C
tot
stg
j
case
-55 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2666
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 1
BF257CSM4
Thermal Data
R
R
Thermal resistance junction - case
Thermal resistance junction - ambient
max
ꢀ0°C/W
th j-case
th j-amb
max
175°C/W
Electrical Characteristics(Tamb = 25°C Unless otherwise specified)
Parameter Test Conditions
Min.
160
160
5
Typ.
Max. Unit
V
V
V
Collector–Emitter Breakdown Voltage I = 10mA
I = 0
(BR)CEO*
(BR)CBO
(BR)EBO
CBO
C
B
Collector – Base Breakdown Voltage I = 100 A
I = 0
V
C
E
Emitter - Base Breakdown Voltage
Collector Cutoff Current
I = 0
I = 100 A
E
C
I
V
=100V
I = 0
50
1
nA
V
CB
E
V
Collector – Emitter Saturation Voltage I = ꢀ0mA
I = 6mA
B
CE(sat)*
C
h
DC Current Gain
I = ꢀ0mA
I = 10V
25
—
FE*
C
B
f
Transition Frequency
I = 15mA
V
V
= 10V
= ꢀ0V
90
ꢀ
MHz
t
C
CE
CE
I = 0
C
C
Reverse Capacitance
pF
re
f = 1MHz
* Pulsed test t = ꢀ00 s , = 1%
p
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2666
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Issue 1
相关型号：
BF257LEADFREE
Small Signal Bipolar Transistor, 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
CENTRAL
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