BUL76A [SEME-LAB]

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR; 高级分布式基站设计高电压高速NPN硅功率晶体管


型号：	BUL76A
厂家：	SEME LAB
描述：	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 高级分布式基站设计高电压高速NPN硅功率晶体管晶体晶体管高压
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BUL76A

SEME

LAB

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

MECHANICAL DATA

Dimensions in mm

10.2

4.5

HIGH SPEED NPN

1.3

SILICON POWER TRANSISTOR

3.6 Dia.

Designed for use in

electronic ballast applications

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

2 3

1.3

• HIGH CURRENT

• EFFICIENT POWER SWITCHING

0.85

0.5

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

2.54 2.54

TO-220

Pin 1 - Base

Pin 2 - Collector

Pin 3 - Emitter

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

Collector – Base Voltage(I =0) 350V

case

CBO

CEO

EBO

Collector – Emitter Voltage (I = 0)

160V

10V

Emitter – Base Voltage (I = 0)

Continuous Collector Current

Base Current

60A

12A

Total Dissipation at T

= 25°C

85W

tot

case

T_j

Junction Temperature

Operating and Storage Temperature Range

150°C

–55 to +150°C

stg

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/97

BUL76A

SEME

LAB

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

case

Parameter

Test Conditions

Min.

Typ.

Max. Unit

ELECTRICAL CHARACTERISTICS

Collector – Emitter Sustaining Voltage I = 100mA

160

350

CEO(sus)

(BR)CBO

(BR)EBO

Collector – Base Breakdown Voltage I = 1mA

Emitter – Base Breakdown Voltage

Collector – Base Cut–Off Current

Collector – Emitter Cut–Off Current

Emitter Cut–Off Current

I = 1mA

= 340V

µA

CBO

CEO

EBO

T = 125°C

100

= 150V

= 9V

100

µA

T = 125°C

100

I = 1A

= 1V

= 5V

I = 10A

DC Current Gain

—

FE*

I = 1A

I = 20A

I = 1A

I = 0.1A

0.1

1.1

0.7

1.2

1.5

Collector – Emitter Saturation Voltage I = 20A

I = 2A

CE(sat)*

BE(sat)*

I = 20A

I = 4A

I = 10A

I = 1A

Base – Emitter Saturation Voltage

I = 20A

I = 2A

DYNAMIC CHARACTERISTICS

Transition Frequency

I = 0.2A

V = 4V

MHz

Output Capacitance

= 10V

f = 1MHz

157

* Pulse test t = 300µs , δ < 2%

Prelim. 2/97

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

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