BYV32-50-XTM [SEME-LAB]

HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS; 气密封装DUAL快速恢复硅整流FOR HI.REL应用
BYV32-50-XTM
型号: BYV32-50-XTM
厂家: SEME LAB    SEME LAB
描述:

HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS
气密封装DUAL快速恢复硅整流FOR HI.REL应用

快速恢复二极管
文件: 总2页 (文件大小:21K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYV32–50–XM / XTM4  
BYV32–100–XM / XTM  
BYV32–150–XM / XTM  
BYV32–200–XM / XTM  
S E M E  
LA B  
MECHANICAL DATA  
Dimensions in mm  
HERMETICALLY SEALED  
DUAL FAST RECOVERY  
SILICON RECTIFIER  
4.70  
5.00  
10.41  
10.67  
0.70  
0.90  
3.56  
3.81  
Dia.  
FOR HIREL APPLICATIONS  
Pin 1 Anode  
Pin 2 Centre Tap  
Pin 3 Cathode  
1 2 3  
Reverse Connected version of  
BYV32xxx RM product  
Tab TO220M (Isolated) (XM) and  
Tabless (TXM) package options  
0.89  
1.14  
2.54  
BSC  
2.65  
2.75  
FEATURES  
TO220XM  
Cathode  
Centre  
Tap  
HERMETIC TO220 METAL PACKAGE  
SCREENING OPTIONS AVAILABLE  
ALL LEADS IOLATED FROM CASE  
VOLTAGE RANGE 50 TO 200V  
AVERAGE CURRENT 20A  
Anode  
10.6  
4.6  
0.8  
Pin 1 Anode  
1 2 3  
Pin 2 Centre Tap  
Pin 3 Cathode  
VERY LOW REVERSE RECOVERY  
TIME t = 35ns  
rr  
VERY LOW SWITCHING LOSSES  
1.0  
2.54  
BSC  
2.70  
BSC  
TO220TXM  
BYV32 BYV32 BYV32 BYV32  
50M 100M 150M 200M  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
Continuous Reverse Voltage  
Repetitive Peak Forward Current  
Average Forward Current  
50V  
50V  
50V  
100V  
100V  
100V  
150V  
150V  
150V  
200V  
200V  
200V  
IFRM  
IF(AV)  
tp = 10 s  
200A  
Tcase = 70°C  
20A  
(switching operation, = 0.5, both diodes conducting)  
Surge Non Repetitive Forward Current tp = 10 ms  
Storage Temperature Range  
IFSM  
Tstg  
Tj  
80A  
–65 to 200°C  
200°C  
Maximum Operating Junction Temperature  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/94  
BYV3250XM / XTM4  
BYV32100XM / XTM  
BYV32150XM / XTM  
BYV32200XM / XTM  
S E M E  
LA B  
ELECTRICAL CHARACTERISTICS (Per Diode) (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ. Max.  
Unit  
A
V = V  
T = 25°C  
30  
R
RWM  
j
I
Reverse Current  
R
V = V  
T = 100°C  
0.6  
mA  
R
RWM  
j
I = 8A  
T = 25°C  
1.1  
F
C
V *  
Forward Voltage  
I = 20A  
T = 25°C  
1.5  
V
F
F
C
I = 5A  
T = 100°C  
0.95  
F
C
I = 2A  
V = 30V  
R
F
35  
50  
ns  
ns  
di / dt = 20A/ s  
t
Reverse Recovery Time  
Recovered Charge  
rr  
I = 1A  
V = 30V  
R
F
di / dt = 50A/ s  
I = 2A  
V = 30V  
R
F
Q
15  
nC  
V
rr  
di / dt = 20A/ s  
V
Forward Recovery Overvoltage di / dt = 50A/ s  
I = 1A  
1.0  
FP  
F
* Pulse Test: t  
300 s, duty cycle 2%.  
p
THERMAL CHARACTERISTICS  
R
Thermal Resistance Junction Case  
1.6  
°C/W  
JC  
Both diodes conducting.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/94  

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