BYV32-XXX [VISHAY]
Dual Common-Cathode Ultrafast Rectifier;
| 型号： | BYV32-XXX |
| 厂家： | 
VISHAY |
| 描述： | Dual Common-Cathode Ultrafast Rectifier |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
1
BYV32 Series
BYVF32 Series
PIN 1
PIN 2
CASE
PIN 1
PIN 2
• Solder dip 275 °C max. 10 s, per JESD 22-B106
(for TO-220AB and ITO-220AB package)
PIN 3
PIN 3
TO-263AB
K
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
TYPICAL APPLICATIONS
1
BYVB32 Series
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
18 A
Base P/N-E3
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
-
RoHS-compliant, commercial grade
VRRM
IFSM
trr
50 V to 200 V
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
25 ns
VF
0.85 V
meets JESD 201 class 2 whisker test
TJ max.
150 °C
TO-220AB, ITO-220AB,
TO-263AB
Polarity: As marked
Package
Mounting Torque: 10 in-lbs max.
Diode variations
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 125 °C
100
IF(AV)
18
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
TJ, TSTG
VAC
150
A
°C
V
Operating storage and temperature range
-65 to +150
1500
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Revision: 23-Feb-16
Document Number: 88558
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT
IF = 20 A
F = 5.0 A
TJ = 25 °C
TJ = 100 °C
TJ = 25 °C
TJ = 100 °C
1.15
Maximum instantaneous forward
voltage per diode
(1)
VF
V
0.85
10
Maximum DC reverse current
per diode
at rated DC blocking voltage
IR
μA
600
Maximum reverse recovery time
per diode
IF = 1 A, VR = 30 V
trr
25
45
ns
dI/dt = 100 A/μs, Irr = 10 % IRM
Typical junction capacitance
per diode
4.0 V, 1 MHz
CJ
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYV
BYVF
BYVB
UNIT
Typical thermal resistance from junction to case per diode
RJC
1.6
5.0
1.6
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
BYV32-200-E3/45
1.85
1.97
1.35
1.35
1.85
1.97
1.35
1.35
45
45
45
81
45
45
45
81
BYVF32-200-E3/45
BYVB32-200-E3/45
BYVB32-200-E3/81
BYV32-200HE3/45 (1)
BYVF32-200HE3/45 (1)
BYVB32-200HE3/45 (1)
BYVB32-200HE3/81 (1)
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Tube
50/tube
50/tube
Tube
50/tube
Tube
800/reel
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 23-Feb-16
Document Number: 88558
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
20
18
16
1000
100
10
TC = 100 °C
12
8
1
4
TC = 25 °C
Resistive or Inductive Load
0
0.1
25
50
75
150
0
100
125
0
20
40
60
80
100
Case Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
150
125
100
75
60
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 150 °C
10 ms Single Half Sine-Wave
50
40
30
20
10
0
50
25
0
1
100
1
100
10
10
Number of Cycles at 50 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 125 °C
10
TJ = 25 °C
1
0.1
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 23-Feb-16
Document Number: 88558
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV32-xxx, BYVF32-xxx, BYVB32-xxx
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.076 (1.93) REF.
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
7° REF.
45° REF.
0.113 (2.87)
0.103 (2.62)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.580 (14.73)
PIN
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 23-Feb-16
Document Number: 88558
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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