D1022UK [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D1022UK |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D1022UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
A
K
C
B
3
2
(
2 pls
)
1
100W – 28V – 500MHz
PUSH–PULL
E
D
5
4
G
F
4 pls
( )
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
H
J
I
M
N
DK
• LOW C
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 1
GATE 2
rss
DRAIN 2
GATE 1
PIN 4
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
Inches
Tol.
0.005
0.005
5°
• HIGH GAIN – 10 dB MINIMUM
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.254
0.65R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
0.03
0.005
0.005
0.005
APPLICATIONS
F
G
H
I
J
K
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
0.13
0.13
0.13
0.02
0.13
0.005
0.005
0.005
0.001
0.005
M
N
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
292W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
70V
±20V
DSS
GSS
I
15A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.11/00
D1022UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
Test Conditions
PER SIDE
case
Parameter
Min.
Typ.
Max. Unit
Drain–Source Breakdown
BV
V
= 0
I = 100mA
70
V
DSS
GS
D
Voltage
Zero Gate Voltage
I
V
V
= 28V
= 20V
V
= 0
3
mA
DSS
DS
GS
Drain Current
I
Gate Leakage Current
V
V
= 0
= V
1
7
A
V
GSS
GS
DS
DS
V
g
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
I = 10mA
1
GS(th)
D
GS
GS
V
= 10V
I = 3A
2.4
mhos
fs
DS
D
V
I = 10mA
V = V
DS
0.1
V
GS(th)match
D
Matching Between Sides
TOTAL DEVICE
G
Common Source Power Gain
Drain Efficiency
P
V
= 100W
10
50
dB
%
PS
O
= 28V
I
= 1.2A
DQ
DS
VSWR
Load Mismatch Tolerance
f = 500MHz
20:1
—
PER SIDE
C
Input Capacitance
Output Capacitance
V
V
= 28V
= 28V
= 28V
V
V
V
= –5V f = 1MHz
180
90
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
C
= 0
= 0
f = 1MHz
f = 1MHz
oss
C
Reverse Transfer Capacitance V
7.5
rss
* Pulse Test:
Pulse Duration = 300 s , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 0.6°C / W
THj–case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.11/00
D1022UK
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Figure 1
Power Output and Efficiency vs. Input
Figure 2
Power Output and Gain vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
Z
Z
L
S
500
2.0 - j2.2 2.6 - j0.6
N.B. Impedances measured terminal to
terminal
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.11/00
D1022UK
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D1022UK 500MHz TEST FIXTURE
T1, 6
7cm UT85 50 Ohm semi-rigid coax on Siemens B62152A1x1 2 hole ferrite core
7.7 cm UT85-15 15 ohm semi-rigid coax
T2, 3,4, 5
L1
L2
6 turns 19swg enamelled copper wire, 3.5mm internal diameter
8.5 turns 19swg enamelled copper wire on Fair-rite FT82 ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.11/00
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