D1029UK [SEME-LAB]

METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
D1029UK
型号: D1029UK
厂家: SEME LAB    SEME LAB
描述:

METAL GATE RF SILICON FET
金属闸极射频硅场效应管

晶体 晶体管 射频 CD 放大器 局域网
文件: 总4页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TetraFET  
D1029UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
B
G
(typ)  
C
(2 pls)  
2
3
4
1
P
350W – 28V – 175MHz  
PUSH–PULL  
(2 pls)  
H
D
A
5
E
(4 pls)  
F
I
FEATURES  
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
N
M
O
J
K
DR  
PIN 1  
PIN 3  
PIN 5  
SOURCE (COMMON)  
PIN 2  
PIN 4  
DRAIN 1  
GATE 2  
• LOW C  
rss  
DRAIN 2  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
GATE 1  
DIM Millimetres Tol.  
Inches  
0.75  
0.424  
45°  
Tol.  
A
B
C
D
E
F
G
H
I
19.05  
10.77  
45°  
9.78  
5.71  
27.94  
1.52R  
10.16  
22.22  
0.13  
0.50  
0.13  
5°  
0.020  
0.005  
5°  
• HIGH GAIN – 13 dB MINIMUM  
0.13  
0.13  
0.13  
0.13  
0.13  
MAX  
0.02  
0.13  
0.13  
0.50  
0.13  
0.08  
0.385  
0.225  
1.100  
0.060R  
0.400  
0.875  
0.005  
0.107  
0.067  
0.200  
1.340  
0.062R  
0.005  
0.005  
0.005  
0.005  
0.005  
MAX  
0.001  
0.005  
0.005  
0.020  
0.005  
0.003  
APPLICATIONS  
VHF/UHF COMMUNICATIONS  
from 1 MHz to 200 MHz  
J
K
M
N
O
P
2.72  
1.70  
5.08  
34.03  
1.57R  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
438W  
70V  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
DSS  
GSS  
±20V  
I
35A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim.12/00  
D1029UK  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
Test Conditions  
PER SIDE  
case  
Parameter  
Min.  
Typ.  
Max. Unit  
DrainSource Breakdown  
BV  
V
= 0  
I = 100mA  
70  
V
DSS  
GS  
D
Voltage  
Zero Gate Voltage  
I
V
V
= 28V  
= 20V  
V
= 0  
7
mA  
DSS  
DS  
GS  
Drain Current  
I
Gate Leakage Current  
V
V
= 0  
= V  
7
7
A
V
GSS  
GS  
DS  
DS  
V
g
Gate Threshold Voltage*  
Forward Transconductance*  
I = 10mA  
1
GS(th)  
D
GS  
V
= 10V  
I = 7A  
5.6  
S
fs  
DS  
D
TOTAL DEVICE  
G
Common Source Power Gain  
Drain Efficiency  
P
V
= 350W  
13  
65  
dB  
%
PS  
O
= 28V  
I
= 2A  
DQ  
DS  
VSWR  
Load Mismatch Tolerance  
f = 175MHz  
20:1  
PER SIDE  
C
Input Capacitance  
Output Capacitance  
V
V
= 28V  
= 28V  
= 28V  
V
V
V
= 5V f = 1MHz  
420  
210  
17.5  
pF  
pF  
pF  
iss  
DS  
DS  
DS  
GS  
GS  
GS  
C
= 0  
= 0  
f = 1MHz  
f = 1MHz  
oss  
C
Reverse Transfer Capacitance V  
rss  
* Pulse Test:  
Pulse Duration = 300 s , Duty Cycle 2%  
HAZARDOUS MATERIAL WARNING  
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly  
toxic and care must be taken during handling and mounting to avoid damage to this area.  
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.  
THERMAL DATA  
R
Thermal Resistance Junction Case  
Max. 0.4°C / W  
THjcase  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim.12/00  
D1029UK  
ꢂꢇꢀ  
ꢂꢀꢀ  
ꢈꢇꢀ  
ꢈꢀꢀ  
ꢁꢇꢀ  
ꢁꢀꢀ  
ꢅꢇꢀ  
ꢅꢀꢀ  
ꢇꢀ  
ꢁꢀ  
ꢅꢊ  
ꢅꢄ  
ꢅꢉ  
ꢅꢃ  
ꢅꢇ  
ꢅꢂ  
ꢅꢈ  
ꢅꢁ  
ꢅꢅ  
ꢂꢇꢀ  
ꢂꢀꢀ  
ꢈꢇꢀ  
ꢈꢀꢀ  
ꢁꢇꢀ  
ꢁꢀꢀ  
ꢅꢇꢀ  
ꢅꢀꢀ  
ꢇꢀ  
ꢊꢀ  
ꢄꢀ  
ꢉꢀ  
ꢃꢀ  
3
*DLQ  
G%  
RXW  
3
'UDLQꢆ(IILFLHQF\  
ꢇꢀ  
RXW  
Iꢆ ꢆꢅꢉꢇ0+]  
ꢆ ꢆꢁ$  
:
ꢂꢀ  
ꢈꢀ  
ꢁꢀ  
ꢅꢀ  
:
,
GT  
9GVꢆ ꢆꢁꢄ9  
Iꢆ ꢆꢅꢉꢇ0+]  
ꢆ ꢆꢁ$  
,
GT  
9GVꢆ ꢆꢁꢄ9  
ꢅꢀ ꢅꢁ ꢅꢂ ꢅꢃ ꢅꢄ ꢁꢀ  
3RXW  
ꢅꢀ ꢅꢁ ꢅꢂ ꢅꢃ ꢅꢄ ꢁꢀ  
3
LQ  
ꢆꢆꢆ:  
3 ꢆꢆꢆ:  
LQ  
3RXW  
JDLQ  
'UDLQꢆ(IILFLHQF\  
Figure 2  
Figure 1  
Output Power and Efficiency vs. Input Power  
Output Power and Gain vs. Input Power  
ꢇꢂꢀ  
ꢇꢃꢀ  
OPTIMUM SOURCE AND LOAD IMPEDANCE  
ꢇꢄꢀ  
ꢇꢅꢀ  
ꢇꢁꢀ  
ꢇꢈꢀ  
,0'ꢄ  
G%F  
Frequency  
MHz  
Z
Z
L
9
ꢆ ꢆꢃꢉ9  
GV  
ꢆ ꢆꢃ$  
S
,
GT  
I
I
 ꢆꢂꢊꢁꢋꢀꢆ0+]  
 ꢆꢂꢊꢁꢋꢂꢆ0+]  
175  
225  
2.1 + j1.9 2.8 + j2.4  
1.8 - j0.5 2.9 + j0.7  
ꢁꢀ  
ꢂꢀꢀ ꢂꢁꢀ ꢃꢀꢀ ꢃꢁꢀ ꢄꢀꢀ ꢄꢁꢀ ꢅꢀꢀ  
ꢆꢆ:ꢆꢆ3(3  
3
RXW  
Figure 3  
IMD3 vs. Output Power  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim.12/00  
D1029UK  
L
2
1
0
k
2
8
V
G
a
t
e
-
B
i
a
s
1
2
1
0
0
k
1
n
1
0
0
n
1
0
0
0
u
8 2  
1
0
0
n
0
K
1
n
1
n
L
1
T
4
D
1
0
2
9
U
K
T
2
6
8
0
p
F
T
6
1
u
T
1
2
-
1
8
p
F
9
0
p
F
4
7
p
F
2
-
1
8
p
F
6
8
0
p
F
1
u
T
5
T
3
D
1
0
2
9
U
K
175MHz Test Fixture  
T1, 2, 3,  
7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens A1 x 1  
2 hole core  
T4,5  
T6  
14cm Storm Products EXE18 19/30 S1TW coaxial cable  
11cm Storm Products EXE18 19/30 S1TW coaxial cable  
6 turns 1.2mm dia wire, 5mm internal diameter  
1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core  
L1  
L2  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim.12/00  

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