D1053 [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D1053 |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D1053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
B
A
A
K
C
2
3
4
7
5
6
(2 pls)
1
50W – 28V – 1GHz
PUSH–PULL
D
E
O
9
8
(2 pls)
F
G
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
H
J
I
M
N
DB
• VERY LOW C
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
SOURCE (COMMON) PIN 2
DRAIN 1
DRAIN 3
GATE 4
GATE 2
rss
DRAIN 2
DRAIN 4
GATE 3
GATE 1
PIN 4
PIN 6
PIN 8
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
1.52
1.52
45°
16.38
6.35
18.41
12.70
5.08
24.76
1.52
0.81R
0.13
2.16
Tol.
Inches
Tol.
• HIGH GAIN – 7.5 dB MINIMUM
0.13
0.13
5°
0.060
0.060
45°
0.005
0.005
5°
0.26
0.13
0.13
0.26
0.13
0.13
0.13
0.13
0.02
0.13
0.13
0.645
0.250
0.725
0.500
0.200
0.975
0.060
0.032R
0.005
0.085
0.065R
0.010
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.001
0.005
0.005
APPLICATIONS
F
G
H
I
J
K
M
N
O
• VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
1.65R
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
175W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
70V
±20V
DSS
GSS
I
5A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Prelim. 3/95
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
D1053UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
Test Conditions
PER SIDE
case
Parameter
Min.
Typ.
Max. Unit
Drain–Source Breakdown
BV
V
= 0
I = 100mA
70
V
DSS
GS
D
Voltage
Zero Gate Voltage
I
V
V
= 28V
= 20V
V
= 0
1
mA
DSS
DS
GS
GS
Drain Current
I
Gate Leakage Current
V
V
= 0
= V
1
7
µA
V
GSS
DS
V
g
Gate Threshold Voltage*
Forward Transconductance*
Gate Threshold Voltage
I = 10mA
1
GS(th)
D
DS
GS
GS
V
= 10V
I = 1A
0.8
mhos
fs
DS
D
V
I = 10mA
V = V
DS
0.1
V
GS(th)match
D
Matching Between Sides
TOTAL DEVICE
G
Common Source Power Gain
Drain Efficiency
P
V
= 50W
7.5
45
dB
%
PS
O
η
= 28V
I
= 0.8A
DQ
DS
VSWR
Load Mismatch Tolerance
f = 1GHz
20:1
—
PER SIDE
C
Input Capacitance
Output Capacitance
V
V
= 0
V
V
V
= –5V f = 1MHz
60
30
pF
pF
pF
iss
DS
GS
GS
GS
C
= 28V
= 28V
= 0
= 0
f = 1MHz
f = 1MHz
oss
DS
DS
C
Reverse Transfer Capacitance V
2.5
rss
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 1.0°C / W
THj–case
Prelim. 3/95
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
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