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D2010 [SEME-LAB]

METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
D2010
元器件型号： D2010
生产厂家： SEME LAB    SEME LAB
描述和应用：

METAL GATE RF SILICON FET
金属闸极射频硅场效应管

射频
PDF文件： 总2页 (文件大小：18K)
下载文档：  下载PDF数据表文档文件
型号参数：D2010参数
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D2010UK

 METAL GATE RF SILICON FET

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34 SEME-LAB

D2011

 METAL GATE RF SILICON FET

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256 SEME-LAB

D2011

 METAL GATE RF SILICON FET

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112 SEME-LAB

D2011UK

 METAL GATE RF SILICON FET

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79 SEME-LAB

D2012

 Si NPN TRANSISTOR

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576 ETC

D2012

 Si NPN TRANSISTOR

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226 ETC

D2012UK

 METAL GATE RF SILICON FET

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555 SEME-LAB

D2013

 METAL GATE RF SILICON FET

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80 SEME-LAB

D2013

 METAL GATE RF SILICON FET

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33 SEME-LAB

D2013UK

 METAL GATE RF SILICON FET

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48 SEME-LAB

D2014UK

 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 500MHz SINGLE ENDED

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40 SEME-LAB

D2015L

 Teccor manufactures 15 A rms to 25 A rms rectifiers with voltages rated from 200V to 1000V

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85 LITTELFUSE

D2015L

 Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB, TO-220, 3 PIN

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0 LITTELFUSE

D2015L51

 Rectifier Diode, 1 Phase, 1 Element, 9.5A, 200V V(RRM), Silicon, TO-220AB,

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0 TECCOR

D2015L51V

 暂无描述

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0 TECCOR
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