D2021UK [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D2021UK |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D2021UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
A
N
8
1
2
3
4
D
7
6
5
C
B
P
7.5W – 28V – 1GHz
SINGLE ENDED
H
K
FEATURES
M
L
J
E
F
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
G
SO8 PACKAGE
• VERY LOW C
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
PIN 7 – GATE
PIN 8 – SOURCE
Dim.
A
B
C
D
E
F
G
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
Tol.
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
Tol.
• HIGH GAIN – 10 dB MINIMUM
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
H
0.76
0.030
0.51
1.02
45°
0°
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
J
K
L
7°
M
N
P
0.20
2.18
4.57
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
17.5W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
65V
±20V
DSS
GSS
I
3A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99
D2021UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Drain–Source
BV
V
= 0
I = 10mA
65
V
DSS
GS
D
Breakdown Voltage
Zero Gate Voltage
I
V
V
= 28V
= 20V
V
= 0
3
mA
DSS
DS
GS
GS
Drain Current
I
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
V
V
= 0
= V
1
7
µA
V
GSS
DS
DS
V
g
I = 10mA
0.5
0.54
13
GS(th)
D
GS
V
P
V
= 10V
I = 0.6A
S
fs
DS
D
G
= 7.5W
= 28V
dB
%
PS
O
η
I
=0.3A
DQ
40
DS
VSWR Load Mismatch Tolerance
f = 1GHz
= 0V
20:1
—
pF
pF
pF
C
C
C
Input Capacitance
V
V
V
V
V
V
= –5V f = 1MHz
36
18
iss
DS
GS
GS
GS
Output Capacitance
= 28V
= 28V
= 0
= 0
f = 1MHz
f = 1MHz
oss
rss
DS
DS
Reverse Transfer Capacitance
1.5
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 5°C / W
THj–case
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99
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