D2022UK [SEME-LAB]

METAL GATE RF SILICON FET; 金属闸极射频硅场效应管


型号：	D2022UK
厂家：	SEME LAB
描述：	METAL GATE RF SILICON FET 金属闸极射频硅场效应管晶体晶体管射频 CD 放大器局域网
文件：	总2页 (文件大小：47K)
中文：	中文翻译
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TetraFET

D2022UK

METAL GATE RF SILICON FET

MECHANICAL DATA

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

25W – 28V – 500MHz

PUSH–PULL

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

PIN 1

PIN 3

PIN 5

SOURCE (COMMON) PIN 2

DRAIN 1

GATE 2

rss

DRAIN 2

GATE 1

PIN 4

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

16.38

1.52

45°

6.35

3.30

14.22

Tol.

Inches

Tol.

0.010

0.005

5°

0.26

0.13

5°

0.13

0.645

0.060

45°

• HIGH GAIN – 13 dB MINIMUM

0.250

0.130

0.560

0.005

1.27 x 45° 0.13 0.05 x 45° 0.005

APPLICATIONS

• VHF/UHF COMMUNICATIONS

1.52

6.35

0.13

2.16

1.52

5.08

18.90

0.13

0.02

0.13

MAX

0.13

0.060

0.250

0.005

0.085

0.060

0.200

0.744

0.005

0.001

0.005

MAX

from 50 MHz to 1 GHz

0.005

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

125W

case

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage *

Drain Current *

65V

±20V

DSS

GSS

D(sat)

Storage Temperature

–65 to 150°C

200°C

stg

Maximum Operating Junction Temperature

* Per Side

Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab Ltd. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Document Number 3827

Issue 2

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

D2022UK

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

Test Conditions

PER SIDE

case

Parameter

Min.

Typ.

Max. Unit

Drain–Source Breakdown

= 0

I = 10mA

DSS

Voltage

Zero Gate Voltage

= 28V

= 20V

= 0

DSS

Drain Current

Gate Leakage Current

= 0

= V

µA

GSS

Gate Threshold Voltage*

Forward Transconductance*

I = 10mA

GS(th)

= 10V

I = 1A

0.9

TOTAL DEVICE

Common Source Power Gain

Drain Efficiency

= 25W

= 28V

= 0.5A

VSWR

Load Mismatch Tolerance

f = 500MHz

20:1

—

PER SIDE

Input Capacitance

Output Capacitance

= 28V

= –5V f = 1MHz

iss

= 0

f = 1MHz

oss

Reverse Transfer Capacitance V

2.5

rss

* Pulse Test:

Pulse Duration = 300 µs , Duty Cycle ≤ 2%

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

THERMAL DATA

Thermal Resistance Junction – Case

Max. 1.4°C / W

THj–case

Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab Ltd. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Document Number 3827

Issue 2

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

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