D2213UK [SEME-LAB]
METAL GATE RF SILICON FET; 金属闸极射频硅场效应管
| 型号： | D2213UK |
| 厂家： | 
SEME LAB |
| 描述： | METAL GATE RF SILICON FET |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D2213UK
SEME
METAL GATE RF SILICON FET
LAB
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
A
K
C
B
3
2
(
2 pls
)
1
20W – 12.5V – 1GHz
PUSH–PULL
E
D
5
4
G
F
4 pls
( )
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
H
J
I
M
N
DK
• VERY LOW C
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 1
GATE 2
rss
DRAIN 2
GATE 1
PIN 4
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
Inches
Tol.
0.13
0.13
5°
0.254
0.065R
45°
0.005
0.005
5°
• HIGH GAIN – 10 dB MINIMUM
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
F
APPLICATIONS
G
H
I
J
K
• HF/VHF/UHF COMMUNICATIONS
from 1MHz to 2 GHz
M
N
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
83W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
40V
±20V
DSS
GSS
I
8A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
* Per Side
Prelim. 2/96
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
D2213UK
SEME
LAB
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
Test Conditions
PER SIDE
case
Parameter
Min.
Typ.
Max. Unit
Drain–Source
BV
V
= 0
I = 10mA
40
V
DSS
GS
D
Breakdown Voltage
Zero Gate Voltage
I
V
V
= 12.5V
= 20V
V
= 0
4
mA
DSS
DS
GS
GS
Drain Current
I
Gate Leakage Current
V
V
= 0
= V
4
7
µA
V
GSS
DS
DS
V
g
Gate Threshold Voltage *
Forward Transconductance *
I = 10mA
0.5
GS(th)
D
GS
V
= 10V
I = 0.8A
0.72
S
fs
DS
D
TOTAL DEVICE
G
Common Source Power Gain
Drain Efficiency
P
V
= 20W
10
40
dB
%
PS
O
η
= 12.5V
I
= 0.8A
DQ
DS
VSWR Load Mismatch Tolerance
f = 1GHz
20:1
—
PER SIDE
C
C
C
Input Capacitance
V
V
V
= 0
V
= –5V f = 1MHz
48
40
4
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
Output Capacitance
= 12.5V V
= 12.5V V
= 0
= 0
f = 1MHz
f = 1MHz
oss
rss
Reverse Transfer Capacitance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 2.1°C / W
THj–case
Prelim. 2/96
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
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