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IRFM240 [SEME-LAB]

N?CHANNEL POWER MOSFET; N沟道功率MOSFET
IRFM240
型号： IRFM240
厂家： SEME LAB    SEME LAB
描述：

N?CHANNEL POWER MOSFET
N沟道功率MOSFET
文件： 总2页 (文件大小：22K)
中文：  中文翻译
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IRFM240  
2N7219  
MECHANICAL DATA  
Dimensions in mm (inches)  
N–CHANNEL  
POWER MOSFET  
13.59 (0.535)  
13.84 (0.545)  
6.32 (0.249)  
6.60 (0.260)  
3.53 (0.139)  
Dia.  
1.02 (0.040)  
1.27 (0.050)  
3.78 (0.149)  
VDSS  
200V  
18A  
ID(cont)  
RDS(on)  
Ω
0.18  
1
2
3
FEATURES  
• N–CHANNEL MOSFET  
• HIGH VOLTAGE  
0.89 (0.035)  
1.14 (0.045)  
• HERMETIC ISOLATED TO-254 PACKAGE  
• ELECTRICALLY ISOLATED  
3.81 (0.150)  
BSC  
3.81 (0.150)  
BSC  
TO–254AA – Isolated Metal Package  
Pin 1 – Drain  
Pin 2 – Source  
Pin 3 – Gate  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
C
V
I
Gate – Source Voltage  
±20V  
18A  
GS  
Continuous Drain Current  
@ V = 10V , T = 25°C  
GS C  
D
@ V = 10V , T = 100°C  
11A  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
72A  
125W  
1.0W / °C  
18  
5.0V / ns  
1.0°C / W  
48°C / W  
–55 to 150°C  
300°C  
DM  
P
@ T = 25°C  
D
C
1
I
Avalanche Current  
AR  
2
dv / dt  
Peak Diode Recovery  
R
Thermal Resistance Junction – Case  
Thermal Resistance Junction – Ambient  
θJC  
R
θJA  
T , T  
Operating Junction and Storage Temperature Range  
Lead Temperature (1.6mm from case for 10s)  
J
STG  
T
L
1)  
2)  
V
= 50V , Starting T = 25°C , L ≥ 1.3mH , V = 10V , Peak I = 18A  
DD GS L  
J
≤ 18A , di/dt ≤ 150A / µS , V ≤ 200V , T ≤ 150°C  
DD J  
I
SD  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 4145  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  
IRFM240  
2N7219  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)  
J
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
STATIC ELECTRICAL RATINGS  
Drain – Source Breakdown Voltage  
Temperature Coefficient of  
Breakdown Voltage  
BV  
V
= 0  
I = 1mA  
V
200  
DSS  
GS  
D
∆BV  
∆T  
Reference to 25°C  
I = 1mA  
DSS  
V/°C  
0.29  
J
D
Static Drain – Source On–State  
V
V
V
V
V
= 10V  
I = 11A  
0.18  
Ω
GS  
GS  
DS  
DS  
GS  
D
R
V
DS(on)  
2
Resistance  
= 10V  
I = 18A  
0.25  
D
Gate Threshold Voltage  
= V  
I = 250µA  
V
2.0  
6.1  
4.0  
GS(th)  
fs  
GS  
D
(Ω)  
2
g
Forward Transconductance  
≥ 15V  
I
= 11A  
S(Ω  
DS  
= 0  
V
= 160V  
25  
250  
100  
–100  
DS  
I
Zero Gate Voltage Drain Current  
µA  
DSS  
T = 125°C  
J
I
I
Forward Gate – Source Leakage  
Reverse Gate – Source Leakage  
V
V
= 20V  
GSS  
GS  
nA  
= –20V  
GSS  
GS  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
C
C
C
V
V
= 0  
1300  
400  
iss  
GS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
= 25V  
oss  
rss  
pF  
nC  
f = 1MHz  
V = 10V  
GS  
130  
Q
Q
Q
t
60  
10.6  
37.6  
20  
g
Gate – Source Charge  
Gate – Drain (“Miller”) Charge  
Turn– On Delay Time  
Rise Time  
I = 18A  
D
gs  
gd  
V
= 100V  
DS  
d(on)  
V
= 100V  
DD  
t
t
t
105  
58  
r
I = 18A  
V
= 10V  
GS  
ns  
D
Turn–Off Delay Time  
Fall Time  
d(off)  
f
R = 9.1Ω  
G
67  
SOURCE – DRAIN DIODE CHARACTERISTICS  
I
I
Continuous Source Current  
18  
72  
S
A
V
1
Pulse Source Current  
SM  
I = 18A  
T = 25°C  
S
J
2
V
t
Diode Forward Voltage  
1.5  
SD  
V
= 0  
GS  
2
Reverse Recovery Time  
I = 18A  
T = 25°C  
ns  
500  
5.3  
rr  
F
J
2
Q
t
Reverse Recovery Charge  
d / d ≤ 100A/µs V ≤ 50V  
µC  
rr  
i
t
DD  
Forward Turn–On Time  
Negligible  
on  
PACKAGE CHARACTERISTICS  
Internal Drain Inductance Measured from drain lead (6mm / 0.25in from package) to  
Internal Source Inductance source lead (6mm / 0.25in from package).  
L
L
4.0  
4.0  
D
nH  
S
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature  
2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 4145  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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