IRFY044C [SEME-LAB]
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS; N沟道功率MOSFET用于HI.REL应用
| 型号： | IRFY044C |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| 文件： | 总2页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFY044C
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
FOR HI–REL
4.70
5.00
10.41
10.67
0.70
0.90
APPLICATIONS
3.56
3.81
Dia.
VDSS
60V
20A
ID(cont)
RDS(on)
1 2 3
Ω
0.035
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
0.89
1.14
2.65
2.75
2.54
BSC
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
TO–220M – Metal Package
Ceramic Lead Seals
• ALL LEADS ISOLATED FROM CASE
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
AVAILABLE SCREENINGS
IRFY044C.MOD
IRFY004C-A
FULL ASSESSMENT LEVEL
SEQUENCE A
IRFY044CJ
IRFY044CJXV
IRFY044CJTX
SEQUENCE B
IRFY004C-B
SEQUENCE C
IRF044C-C
SEQUENCE D
IRFY044C-D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
C
V
Gate – Source Voltage
±20V
20A
GS
I
I
I
Continuous Drain Current @ T = 25°C
D
C
Continuous Drain Current @ T = 100°C
20A
D
C
Pulsed Drain Current
128A
DM
P
Power Dissipation @ T = 25°C
60W
D
C
Linear Derating Factor
0.48W/°C
–55 to 150°C
2.1°C/W max.
80°C/W max.
T , T
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
J
stg
R
θJC
θJA
R
Prelim. 11/95
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
IRFY044C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
C
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
BV
V
= 0
I = 1mA
60
V
DSS
GS
D
∆BV
∆T
Reference to 25°C
I = 1mA
DSS
0.68
V/°C
J
D
Static Drain – Source On–State
Resistance
R
V
= 10V
I = 20A
0.035
4
Ω
DS(on)
GS
D
V
Gate Threshold Voltage
Forward Transconductance
V
V
V
= V
I = 250µA
2
V
GS(th)
DS
DS
GS
GS
D
(Ω)
g
≥ 15V
I = 20A
17
S(Ω
fs
D
= 0
V
= 0.8BV
25
250
100
–100
DS
DSS
I
Zero Gate Voltage Drain Current
µA
DSS
T = 125°C
J
I
I
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
V
V
= 20V
GSS
GSS
GS
GS
nA
= –20V
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
V
V
= 0
2400
1100
230
iss
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
= 25V
pF
nC
oss
rss
f = 1MHz
= 10V
Q
Q
Q
V
39
6.7
18
88
15
g
gs
GS
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
I = 20A
D
V
V
V
= 0.5BV
= 10V
52
gd
DS
GS
DD
DSS
t
t
t
t
23
d(on)
r
= 30V
130
81
ns
Turn–Off Delay Time
Fall Time
I = 20A
D
d(off)
f
R = 9.1Ω
79
G
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
I
I
20
S
A
V
Pulse Source Current
128
SM
I = 20A
T = 25°C
J
S
V
Diode Forward Voltage
2.5
SD
V
= 0
GS
t
Reverse Recovery Time
I = 20A
T = 25°C
220
1.6
ns
rr
F
J
Q
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
d / d ≤ 100A/µs V ≤ 50V
µC
rr
i
t
DD
L
L
Internal Drain Inductance (from 6mm down drain lead pad to centre of die)
Internal Source Inductance (from 6mm down source lead to centre of source bond pad)
8.7
8.7
D
nH
S
Prelim. 11/95
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
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