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元器件品牌
IRFY210
[SEME-LAB]
N-Channel MOSFET in a Hermetically sealed; N沟道MOSFET在一个密封
元器件型号：
IRFY210
生产厂家：
SEME LAB
描述和应用：
N-Channel MOSFET in a Hermetically sealed
N沟道MOSFET在一个密封
晶体 晶体管 局域网
PDF文件：
总1页 (文件大小：15K)
下载文档：
下载PDF数据表文档文件
型号参数：IRFY210参数
查看货源
IRFY210C
N-Channel MOSFET in a Hermetically sealed
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4
SEME-LAB
IRFY210C
N-Channel
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53
ETC
IRFY220
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.3A I(D) | TO-220AB
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13
ETC
IRFY220
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
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11
SEME-LAB
IRFY220SM
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | CHIP
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7
ETC
IRFY230
N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
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156
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11
SEME-LAB
IRFY230
N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
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11
SEME-LAB
IRFY230C
N-Channel
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8
ETC
IRFY230C
N-Channel MOSFET in a Hermetically sealed
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5
SEME-LAB
IRFY230CM
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
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0
IRF
IRFY230CM
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
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0
INFINEON
IRFY230CMPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
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0
IRF
IRFY230CMPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
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156
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0
INFINEON
IRFY230CMSCXPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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156
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0
IRF
IRFY230CMSCXPBF
Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
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0
INFINEON
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