IRFY240 [SEME-LAB]

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS; N沟道功率MOSFET用于HI- REL应用
IRFY240
元器件型号: IRFY240
生产厂家: SEME LAB    SEME LAB
描述和应用:

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
N沟道功率MOSFET用于HI- REL应用

PDF文件: 总2页 (文件大小:18K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFY240参数

IRFY240_11

N-CHANNEL POWER MOSFET

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17 SEME-LAB

IRFY240C

POWER MOSFET THRU-HOLE (TO-257AA

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72 IRF

IRFY240C

N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.

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33 SEME-LAB

IRFY240CM

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)

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88 IRF

IRFY240CMPBF

暂无描述

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0 IRF

IRFY240CMSCXPBF

暂无描述

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0 IRF

IRFY240CSCS

Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,

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0 INFINEON

IRFY240M

N-Channel

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46 ETC

IRFY240M

N-Channel MOSFET in a Hermetically sealed

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12 SEME-LAB

IRFY240M

N-CHANNEL POWER MOSFET

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27 SEME-LAB

IRFY240MEA

暂无描述

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0 IRF

IRFY240MEAPBF

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MEBPBF

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MECPBF

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF

IRFY240MEDPBF

Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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0 IRF