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元器件品牌
IRFY240
[SEME-LAB]
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS; N沟道功率MOSFET用于HI- REL应用
元器件型号:
IRFY240
生产厂家:
SEME LAB
描述和应用:
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
N沟道功率MOSFET用于HI- REL应用
PDF文件:
总2页 (文件大小:18K)
下载文档:
下载PDF数据表文档文件
型号参数:IRFY240参数
查看货源
IRFY240_11
N-CHANNEL POWER MOSFET
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156
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17
SEME-LAB
IRFY240C
POWER MOSFET THRU-HOLE (TO-257AA
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: Undefined variable $rtag in
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156
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72
IRF
IRFY240C
N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.
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: Undefined variable $rtag in
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156
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33
SEME-LAB
IRFY240CM
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A)
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88
IRF
IRFY240CMPBF
暂无描述
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156
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0
IRF
IRFY240CMSCXPBF
暂无描述
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: Undefined variable $rtag in
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156
-
0
IRF
IRFY240CSCS
Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB,
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: Undefined variable $rtag in
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156
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0
INFINEON
IRFY240M
N-Channel
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156
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46
ETC
IRFY240M
N-Channel MOSFET in a Hermetically sealed
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156
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12
SEME-LAB
IRFY240M
N-CHANNEL POWER MOSFET
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156
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27
SEME-LAB
IRFY240MEA
暂无描述
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156
-
0
IRF
IRFY240MEAPBF
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
IRF
IRFY240MEBPBF
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
IRF
IRFY240MECPBF
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
IRFY240MEDPBF
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IRF
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