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SML30B40 [SEME-LAB]

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS; N沟道增强型高压功率MOSFET
SML30B40
型号： SML30B40
厂家： SEME LAB    SEME LAB
描述：

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N沟道增强型高压功率MOSFET

晶体 晶体管 开关 脉冲 高压 局域网 高电压电源
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SML30B40  
TO–247AD Package Outline.  
Dimensions in mm (inches)  
N–CHANNEL  
ENHANCEMENT MODE  
HIGH VOLTAGE  
4.69 (0.185)  
5.31 (0.209)  
1.49 (0.059)  
2.49 (0.098)  
15.49 (0.610)  
16.26 (0.640)  
POWER MOSFETS  
3.55 (0.140)  
3.81 (0.150)  
1
2
3
VDSS  
300V  
40A  
1.65 (0.065)  
2.13 (0.084)  
0.40 (0.016)  
0.79 (0.031)  
ID(cont)  
2.87 (0.113)  
3.12 (0.123)  
1.01 (0.040)  
1.40 (0.055)  
Ω
RDS(on) 0.085  
2.21 (0.087)  
2.59 (0.102)  
5.25 (0.215)  
BSC  
• Faster Switching  
• Lower Leakage  
• 100% Avalanche Tested  
• Popular TO–247 Package  
Pin 1 – Gate  
Pin 2 – Drain  
Pin 3 – Source  
D
StarMOS is a new generation of high voltage  
N–Channel enhancement mode power MOSFETs.  
This new technology minimises the JFET effect,  
increases packing density and reduces the  
G
on-resistance. StarMOS also achieves faster  
switching speeds through optimised gate layout.  
S
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
Drain – Source Voltage  
300  
40  
V
A
A
V
DSS  
Continuous Drain Current  
I
I
D
1
Pulsed Drain Current  
160  
DM  
Gate – Source Voltage  
±20  
V
V
GS  
V
Gate – Source Voltage Transient  
±30  
GSM  
Total Power Dissipation @ T  
Derate Linearly  
= 25°C  
300  
W
case  
P
D
2.4  
W/°C  
Operating and Storage Junction Temperature Range  
Lead Temperature : 0.063” from Case for 10 Sec.  
–55 to 150  
300  
T , T  
J
STG  
°C  
A
T
L
1
Avalanche Current (Repetitive and Non-Repetitive)  
40  
I
AR  
1
Repetitive Avalanche Energy  
30  
E
E
AR  
AS  
mJ  
2
Single Pulse Avalanche Energy  
1300  
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.  
2) Starting T = 25°C, L = 1.63mH, R = 25Ω, Peak I = 40A  
J
G
L
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
6/99  
SML30B40  
STATIC ELECTRICAL RATINGS (T  
= 25°C unless otherwise stated)  
case  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
BV  
I
Drain – Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
V
V
V
V
V
V
V
V
= 0V , I = 250µA  
300  
V
DSS  
GS  
DS  
DS  
GS  
DS  
DS  
GS  
GS  
D
= V  
250  
DSS  
µA  
DSS  
(V  
= 0V)  
= 0.8V  
, T = 125°C  
1000  
GS  
DSS  
C
I
Gate – Source Leakage Current  
Gate Threshold Voltage  
= ±30V , V  
= 0V  
±100 nA  
GSS  
DS  
V
= V  
> I  
, I = 1.0mA  
D
2
4
V
A
Ω
GS(TH)  
GS  
x R  
Max  
D(ON)  
DS(ON)  
2
I
On State Drain Current  
40  
D(ON)  
= 10V  
= 10V , I = 0.5 I [Cont.]  
2
R
Drain – Source On State Resistance  
0.085  
DS(ON)  
D
D
DYNAMIC CHARACTERISTICS  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
C
C
C
Input Capacitance  
V
V
= 0V  
3970  
iss  
GS  
DS  
Output Capacitance  
= 25V  
750  
230  
145  
25  
pF  
nC  
oss  
rss  
Reverse Transfer Capacitance  
f = 1MHz  
3
Q
Q
Q
t
Total Gate Charge  
V
V
= 10V  
g
GS  
DD  
Gate – Source Charge  
Gate – Drain (“Miller”) Charge  
Turn–on Delay Time  
Rise Time  
= 0.5 V  
DSS  
gs  
gd  
I = I [Cont.] @ 25°C  
59  
D
D
V
= 15V  
12  
d(on)  
GS  
DD  
t
t
t
V
= 0.5 V  
10  
r
DSS  
ns  
Turn-off Delay Time  
Fall Time  
I = I [Cont.] @ 25°C  
43  
d(off)  
f
D
D
R
= 1.6Ω  
7
G
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS  
Characteristic  
Test Conditions  
Min. Typ. Max. Unit  
I
I
Continuous Source Current (Body Diode)  
1
40  
A
S
Pulsed Source Current  
Diode Forward Voltage  
(Body Diode)  
160  
SM  
2
V
t
V
= 0V , I = – I [Cont.]  
1.3  
V
SD  
GS  
S
D
Reverse Recovery Time  
Reverse Recovery Charge  
I = – I [Cont.] , dl / dt = 100A/µs  
390  
6
ns  
µC  
rr  
S
D
s
Q
I = – I [Cont.] , dl / dt = 100A/µs  
S D s  
rr  
THERMAL CHARACTERISTICS  
Characteristic  
Min. Typ. Max. Unit  
R
R
Junction to Case  
0.42  
°C/W  
40  
θJC  
Junction to Ambient  
θJA  
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.  
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%  
3) See MIL–STD–750 Method 3471  
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
6/99  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  

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