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2N3501CSM4 [SEME-LAB]

HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS; 高压，中功率NPN晶体管在密封陶瓷表面贴装封装，高可靠性的

2N3501CSM4


元器件型号：	2N3501CSM4
生产厂家：	SEME LAB
描述和应用：	HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 高压，中功率NPN晶体管在密封陶瓷表面贴装封装，高可靠性的晶体晶体管高压
PDF文件：	总3页 (文件大小：21K)
下载文档：	下载PDF数据表文档文件
型号参数：2N3501CSM4参数

2N3501DCSM

TRANSISTOR | BJT | PAIR | NPN | 150V V(BR)CEO | 300MA I(C) | LLCC

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16 ETC

2N3501DCSM

DUAL BIPOLAR NPN DEVICES

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4 SEME-LAB

2N3501E3

Small Signal Bipolar Transistor, 0.3A I(C), NPN

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0 MICROSEMI

2N3501L

Type 2N3501L Geometry 5620 Polarity NPN

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23 SEMICOA

2N3501L

Chip Type 2C3501 Geometry 5620 Polarity NPN

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20 SEMICOA

2N3501L

NPN SILICON TRANSISTOR

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27 MICROSEMI

2N3501L

NPN SILICON TRANSISTOR

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19 MICROSEMI

2N3501L

Bipolar NPN Device in a Hermetically sealed TO5

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4 SEME-LAB

2N3501L

RADIATION HARDENED

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18 MICROSEMI

2N3501L

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 MCC

2N3501L-BP

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 MCC

2N3501LEADFREE

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 CENTRAL

2N3501LEADFREE

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

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0 CENTRAL

2N3501TV

TRANSISTOR | BJT | NPN | 115V V(BR)CEO | 50MA I(C) | TO-39

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14 ETC

2N3501UB

Silicon NPN Transistor

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44 SEMICOA

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