SEMIX303GD12T4C [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX303GD12T4C |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 303GD12T4c
ꢋ
ꢏ ()*ꢕ/ ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ- ꢏ () *ꢕ
'(..
34)
ꢔ
"
"
1ꢕ
ꢋ- ꢏ '2) *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ 5. *ꢕ
64.
1ꢕ78
ꢔ:ꢖꢉ
ꢑꢚꢈꢍ
1ꢕ78ꢏ6+1ꢕꢆꢂꢃ
9..
; (.
'.
"
ꢔ
®
ꢔꢕꢕ ꢏ 4.. ꢔ< ꢔ:ꢖ = (. ꢔ< ꢋ- ꢏ '). *ꢕ
ꢔꢕꢖꢉ > '(.. ꢔ
?ꢈ
SEMiX 33c
Inverse Diode
Trench IGBT Modules
1@
ꢋ- ꢏ '2) *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ 5. *ꢕ
63.
())
"
"
1@78
1@78ꢏ6+1@ꢆꢂꢃ
9..
"
SEMiX 303GD12T4c
Module
1ꢑꢗ78ꢉꢘ
4..
"
*ꢕ
*ꢕ
ꢔ
ꢋꢛ-
A 3. ,,, B '2)
A 3. ,,, B '()
3...
Target Data
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
"ꢕ/ ' ꢃꢊꢆ,
Features
ꢋ
ꢏ ()*ꢕ/ ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢔ:ꢖꢗꢑꢎꢘ
ꢔ:ꢖ ꢏ ꢔꢕꢖ/ 1ꢕ ꢏ '( ꢃ"
)
)/5
4/)
ꢔ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
1ꢕꢖꢉ
ꢔ:ꢖ ꢏ . ꢔ/ ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ- ꢏ () *ꢕ
ꢋ- ꢏ () *ꢕ
ꢃ"
ꢔ
ꢔꢕꢖ.
./5
./2
6/6
)
./9
./5
6/2
)/6
(
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ ()*ꢕ
ꢔ
ꢀ
ꢀ
ꢀ
ꢌꢕꢖ
ꢔ:ꢖ ꢏ ') ꢔ
ꢃC
ꢃC
ꢔ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢋ- ꢏ ').*ꢕ
ꢔꢕꢖꢗꢈꢐꢑꢘ
1ꢕꢆꢂꢃ ꢏ 6.. "/ ꢔ:ꢖ ꢏ ') ꢔ ꢋ- ꢏ ()*ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ ').*ꢕꢍꢎꢊꢚꢒꢅꢛ,
'/5
(/(
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
(/3
ꢔ
ꢀ
ꢕꢊꢅꢈ
'5/4
'/(
ꢆ@
ꢆ@
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢕ
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ ()/ ꢔ:ꢖ ꢏ . ꢔ
ꢏ ' 8ꢁD
%ꢌꢂ#ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ#
ꢀ
ꢕꢌꢅꢈ
E:
'/'
'2..
(/)
ꢆ@
ꢆꢕ
F
ꢂꢌ ꢋ ꢏ').*ꢕ
-
ꢔ:ꢖ ꢏ A5 ,,, B')ꢔ
ꢋ- ꢏ () *ꢕ
7:ꢊꢆꢑ
ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ#ꢗꢂ ꢘ
ꢆꢈ
ꢆꢈ
ꢃG
ꢆꢈ
ꢆꢈ
7:ꢂꢆ ꢏ C
7:ꢂ ꢏ C
ꢔꢕꢕ ꢏ ꢔ
1ꢕꢆꢂꢃꢏ "
ꢋ- ꢏ '). *ꢕ
66
66
ꢑ
ꢖꢂ
ꢃG
7ꢑꢎꢗ-Aꢍꢘ
ꢚꢅꢌ 1:Hꢋ
./.9)
IJ&
GD
1
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ@ ꢏ ꢔꢖꢕ
1@ꢆꢂꢃ ꢏ 6.. "< ꢔ:ꢖ ꢏ . ꢔ
ꢋ- ꢏ () *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ '). *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ- ꢏ () *ꢕ
(/(
(/'
'/6
./9
6
(/)
(/3)
'/)
ꢔ
ꢔ
ꢔ@.
ꢔ
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ () *ꢕ
'/'
ꢔ
ꢌ@
6/6
ꢃC
ꢃC
ꢋ- ꢏ '). *ꢕ
ꢋ- ꢏ '). *ꢕ
3
3/)
®
1778
Eꢌꢌ
1@ꢆꢂꢃ ꢏ 6.. "
"
SEMiX 33c
?ꢕ
ꢖꢌꢌ
ꢔ:ꢖ ꢏ A') ꢔ< ꢔꢕꢕ ꢏ 4.. ꢔ
ꢚꢅꢌ #ꢊꢂ#ꢅ
((/)
ꢃG
Trench IGBT Modules
7ꢑꢎꢗ-AꢍꢘK
./'5
IJ&
Module
Lꢕꢖ
(.
./2
'
ꢆꢁ
ꢃC
ꢃC
SEMiX 303GD12T4c
7ꢕꢕMBꢖꢖM
ꢌꢅꢈ,/ ꢑꢅꢌꢃꢊꢆꢐꢒAꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ () *ꢕ
ꢋꢍꢐꢈꢅꢏ '() *ꢕ
7ꢑꢎꢗꢍAꢈꢘ
8ꢈ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
./.'3
IJ&
Oꢃ
Oꢃ
ꢄ
Target Data
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆN ꢗ8)ꢘ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ84ꢘ
6
)
)
8ꢑ
(/)
Features
ꢙ
9..
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
Temperature sensor
7'..
ꢋꢍꢏ'..*ꢕ ꢗ7()ꢏ) NCꢘ
7ꢗꢋꢘꢏ7'..ꢅ+ꢚQH'..J'()ꢗ'JꢋA'Jꢋ'..ꢘR<
ꢋQIR
./396;)P
6)).;(P
NC
I
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
H'..J'()
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢀ
ꢕ
%ꢌꢂ#ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ#
ꢀ
ꢂꢌ ꢋ ꢏ').*ꢕ
-
GD
2
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
4
16-07-2007 SCH
© by SEMIKRON
SEMiX 303GD12T4c
ꢕꢐꢈꢅ ꢉꢖ8ꢊS 66ꢍ
%ꢊꢆꢂꢇꢑ
:K
5
16-07-2007 SCH
© by SEMIKRON
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