SEMIX402GAL066HDS_10 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块![SEMIX402GAL066HDS_10](http://pdffile.icpdf.com/pdf1/p00172/img/icpdf/SEMIX_965561_icpdf.jpg)
型号: | SEMIX402GAL066HDS_10 |
厂家: | ![]() |
描述: | Trench IGBT Modules |
文件: | 总5页 (文件大小:342K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SEMiX402GAL066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
502
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
379
ICnom
400
ICRM
ICRM = 2xICnom
800
VGES
-20 ... 20
SEMiX® 2s
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
tpsc
6
µs
°C
Tj
-40 ... 175
Trench IGBT Modules
SEMiX402GAL066HDs
Features
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
543
397
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
400
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
800
A
1800
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
566
412
A
A
Tj = 175 °C
• UL recognised file no. E63532
IFnom
400
A
Typical Applications*
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
800
A
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
1800
A
-40 ... 175
°C
Module
It(RMS)
Tstg
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Characteristics
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 400 A
VCE(sat)
Tj = 25 °C
1.45
1.7
1.85
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
1.4
1
V
V
0.9
2.1
3.0
6.5
0.45
mΩ
mΩ
V
VGE = 15 V
2.1
VGE(th)
ICES
VGE=VCE, IC = 6.4 mA
Tj = 25 °C
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
24.7
1.54
0.73
3200
1.00
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX402GAL066HDs
Characteristics
Symbol Conditions
min.
typ.
150
125
22
max.
Unit
ns
VCC = 300 V
td(on)
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
IC = 400 A
tr
ns
Eon
mJ
ns
RG on = 4.5 Ω
td(off)
tf
900
65
R
G off = 4.5 Ω
ns
Tj = 150 °C
Eoff
24
mJ
Rth(j-c)
per IGBT
0.12
K/W
SEMiX® 2s
Inverse diode
IF = 400 A
GE = 0 V
chip
Tj = 25 °C
VF = VEC
1.4
1.4
1.60
1.6
V
V
V
Tj = 150 °C
Trench IGBT Modules
SEMiX402GAL066HDs
Features
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.8
1
1.1
0.95
1.3
V
V
0.85
1.0
1.4
250
47
mΩ
mΩ
A
1.1
1.6
IF = 400 A
di/dtoff = 3700 A/µs
IRRM
Qrr
µC
• Homogeneous Si
V
V
GE = -8 V
CC = 300 V
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Tj = 150 °C
Err
10
mJ
Rth(j-c)
per diode
0.15
K/W
Freewheeling diode
• UL recognised file no. E63532
IF = 400 A
VF = VEC
Tj = 25 °C
1.3
1.3
1.5
1.5
V
V
Typical Applications*
V
GE = 0 V
Tj = 150 °C
chip
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.7
1
1.1
0.95
1.1
V
V
0.85
0.9
1.2
250
47
mΩ
mΩ
A
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
1.0
1.4
IF = 400 A
di/dtoff = 3700 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
10
mJ
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Rth(j-c)
per diode
0.15
K/W
Module
LCE
18
0.7
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
1
Rth(c-s)
Ms
per module
0.045
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
250
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAL
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX402GAL066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX402GAL066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX402GAL066HDs
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5
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