SEMIX452GB176HD_07 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX452GB176HD_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：797K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 452GB176HD
ꢋ
ꢏ )+,ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ. ꢏ )+ ,ꢕ
'0((
23+
ꢔ
"
"
1ꢕ
ꢋ. ꢏ '+( ,ꢕ
ꢋꢍ ꢏ )+ ,ꢕ
ꢋꢍ ꢏ 4( ,ꢕ
3'(
1ꢕ56
ꢔ9ꢖꢉ
ꢑꢚꢈꢍ
1ꢕ56ꢏ)71ꢕꢆꢂꢃ
8((
: )(
'(
"
ꢔ
®
ꢔꢕꢕ ꢏ ')(( ꢔ; ꢔ9ꢖ < )( ꢔ; ꢋ. ꢏ ')+ ,ꢕ
ꢔꢕꢖꢉ = '0(( ꢔ
>ꢈ
SEMiX 2
Inverse Diode
Trench IGBT Modules
1?
ꢋ. ꢏ '+( ,ꢕ
ꢋꢍ ꢏ )+ ,ꢕ
ꢋꢍ ꢏ 4( ,ꢕ
34+
)8(
"
"
1?56
1?ꢉ6
1?56ꢏ)71?ꢆꢂꢃ
8((
"
"
SEMiX 452GB176HD
ꢑꢚ ꢏ '( ꢃꢈ; ꢈꢊꢆ@
ꢋ. ꢏ )+ ,ꢕ
))((
Module
1ꢑꢗ56ꢉꢘ
8((
"
,ꢕ
,ꢕ
ꢔ
Preliminary Data
ꢋꢛ.
A 2( @@@ B '+(
A 2( @@@ B ')+
2(((
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
"ꢕ- ' ꢃꢊꢆ@
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ
ꢏ )+,ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
min.
typ.
max. Units
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
ꢔ9ꢖꢗꢑꢎꢘ
ꢔ9ꢖ ꢏ ꢔꢕꢖ- 1ꢕ ꢏ ') ꢃ"
+-)
+-4
8-2
ꢔ
ꢃ"
ꢃ"
ꢔ
1ꢕꢖꢉ
ꢔ9ꢖ ꢏ ( ꢔ- ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ. ꢏ )+ ,ꢕ
(-2+
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢋ. ꢏ ')+ ,ꢕ
ꢋ. ꢏ )+ ,ꢕ
ꢋ. ꢏ ')+ ,ꢕ
ꢋ. ꢏ )+,ꢕ
ꢀ
ꢀ
ꢀ
ꢔꢕꢖ(
'
(-C
3-3
+-)
)
'-)
'-'
2-)
8
ꢔ
ꢌꢕꢖ
ꢔ9ꢖ ꢏ '+ ꢔ
ꢃD
ꢃD
ꢔ
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ# &
ꢋ. ꢏ ')+,ꢕ
ꢀ
ꢔꢕꢖꢗꢈꢐꢑꢘ
1ꢕꢆꢂꢃ ꢏ 3(( "- ꢔ9ꢖ ꢏ '+ ꢔ ꢋ. ꢏ )+,ꢕꢍꢎꢊꢚꢒꢅꢛ@
ꢋ. ꢏ ')+,ꢕꢍꢎꢊꢚꢒꢅꢛ@
)-2+
)-C
ꢔ
ꢏ'(((ꢔ ꢗꢐꢒꢒ ꢂꢑꢎꢅꢌ ꢈꢑꢐꢑꢊꢍ
ꢕꢕ
)-2+
ꢔ
ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ# &
ꢏ')((ꢔꢘ
ꢕꢊꢅꢈ
)8-2
'-'
ꢆ?
ꢆ?
ꢔ
ꢕꢕ
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ )+- ꢔ9ꢖ ꢏ ( ꢔ
ꢔ9ꢖ ꢏ A4 ꢔ @@@ B'+ ꢔ
ꢏ ' 6ꢁE
*ꢂꢑ ꢂꢌ ꢆꢅꢙ #ꢅꢈꢊꢄꢆ
ꢀ
ꢕꢌꢅꢈ
F9
(-44
ꢆ?
ꢆꢕ
)4((
ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ#ꢗꢂ ꢘ
32(
0+
ꢆꢈ
ꢆꢈ
ꢃG
ꢆꢈ
ꢆꢈ
59ꢂꢆ ꢏ 2 D
59ꢂ ꢏ 2 D
ꢔꢕꢕ ꢏ ')((ꢔ
1ꢕꢆꢂꢃꢏ 3(("
ꢋ. ꢏ ')+ ,ꢕ
'4(
C((
'(+
ꢑ
ꢖꢂ
''(
ꢃG
5ꢑꢎꢗ.Aꢍꢘ
ꢚꢅꢌ 19Hꢋ
(-(03
IJK
GB
1
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HD
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ? ꢏ ꢔꢖꢕ
1?ꢆꢂꢃ ꢏ 3(( "; ꢔ9ꢖ ꢏ ( ꢔ
ꢋ. ꢏ )+ ,ꢕꢍꢎꢊꢚꢒꢅꢛ@
ꢋ. ꢏ ')+ ,ꢕꢍꢎꢊꢚꢒꢅꢛ@
ꢋ. ꢏ )+ ,ꢕ
'-0
'-0
'-'
(-C
)
'-C
'-C
'-3
'-'
ꢔ
ꢔ
ꢔ?(
ꢔ
ꢋ. ꢏ ')+ ,ꢕ
ꢋ. ꢏ )+ ,ꢕ
ꢔ
ꢌ?
ꢃD
ꢃD
ꢋ. ꢏ ')+ ,ꢕ
ꢋ. ꢏ ')+ ,ꢕ
)-0
®
1556
Fꢌꢌ
1?ꢆꢂꢃ ꢏ 3(( "
38(
4+
"
SEMiX 2
#ꢊJ#ꢑ ꢏ 2+(( "J>ꢈ
>ꢕ
ꢖꢌꢌ
ꢔ9ꢖ ꢏ A'+ ꢔ; ꢔꢕꢕ ꢏ ')(( ꢔ
ꢚꢅꢌ #ꢊꢂ#ꢅ
28
ꢃG
Trench IGBT Modules
5ꢑꢎꢗ.AꢍꢘL
(-'+
IJK
Module
Mꢕꢖ
'4
(-0
'
ꢆꢁ
ꢃD
ꢃD
SEMiX 452GB176HD
5ꢕꢕNBꢖꢖN
ꢌꢅꢈ@- ꢑꢅꢌꢃꢊꢆꢐꢒAꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ )+ ,ꢕ
ꢋꢍꢐꢈꢅꢏ ')+ ,ꢕ
5ꢑꢎꢗꢍAꢈꢘ
6ꢈ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
(-(2+
IJK
*ꢃ
*ꢃ
ꢄ
Preliminary Data
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆO 6+
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 68
3
+
+
6ꢑ
)-+
Features
ꢙ
)+(
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
Temperature sensor
5'((
ꢋꢍꢏ'((,ꢕ ꢗ5)+ꢏ+ ODꢘ
5ꢗꢋꢘꢏ5'((ꢅ7ꢚQH'((J')+ꢗ'JꢋA'Jꢋ'((ꢘR;
ꢋQIR; H
(-2C3:+P
3++(:)P
OD
I
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
H'((J')+
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ ꢊꢈ ꢑꢅꢈꢑꢅ# &
ꢀ
ꢔ
ꢏ'(((ꢔ ꢗꢐꢒꢒ ꢂꢑꢎꢅꢌ ꢈꢑꢐꢑꢊꢍ
ꢕꢕ
ꢚꢐꢌꢐꢃꢅꢑꢅꢌꢈ ꢐꢌꢅ ꢑꢅꢈꢑꢅ# &
ꢏ')((ꢔꢘ
ꢔ
ꢕꢕ
*ꢂꢑ ꢂꢌ ꢆꢅꢙ #ꢅꢈꢊꢄꢆ
ꢀ
GB
2
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HD
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HD
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
17-04-2007 SCH
© by SEMIKRON
SEMiX 452GB176HD
ꢕꢐꢈꢅ ꢉꢖ6ꢊS )
%ꢊꢆꢂꢇꢑ
9L
5
17-04-2007 SCH
© by SEMIKRON
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