SEMIX603GAL066HDS_10 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX603GAL066HDS_10 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX603GAL066HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
600
720
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
541
ICnom
600
ICRM
ICRM = 2xICnom
1200
-20 ... 20
VGES
SEMiX® 3s
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
tpsc
6
µs
°C
Tj
-40 ... 175
Trench IGBT Modules
SEMiX603GAL066HDs
Features
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
771
562
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
600
A
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
1800
A
• Homogeneous Si
-40 ... 175
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Freewheeling diode
Tc = 25 °C
Tc = 80 °C
IF
795
577
A
A
Tj = 175 °C
• UL recognised file no. E63532
IFnom
600
A
Typical Applications*
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
1800
A
-40 ... 175
°C
Module
It(RMS)
Tstg
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Characteristics
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 600 A
VCE(sat)
Tj = 25 °C
1.45
1.7
1.85
2.1
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.9
0.85
0.9
1
V
V
0.9
1.4
2.0
6.5
0.45
mΩ
mΩ
V
VGE = 15 V
1.4
VGE(th)
ICES
VGE=VCE, IC = 9.6 mA
Tj = 25 °C
5
5.8
0.15
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 600 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
37.0
2.31
1.10
4800
0.67
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAL
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX603GAL066HDs
Characteristics
Symbol Conditions
min.
typ.
150
145
12
max.
Unit
ns
VCC = 300 V
td(on)
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
IC = 600 A
tr
ns
Eon
mJ
ns
RG on = 3 Ω
td(off)
tf
1050
105
R
G off = 3 Ω
ns
Tj = 150 °C
Eoff
43
mJ
Rth(j-c)
per IGBT
0.087
K/W
SEMiX® 3s
Inverse diode
IF = 600 A
GE = 0 V
chip
Tj = 25 °C
VF = VEC
1.4
1.4
1.60
1.6
V
V
V
Tj = 150 °C
Trench IGBT Modules
SEMiX603GAL066HDs
Features
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.5
1
1.1
0.95
0.8
V
V
0.85
0.7
0.9
350
63
mΩ
mΩ
A
0.8
1.1
IF = 600 A
di/dtoff = 3800 A/µs
IRRM
Qrr
µC
• Homogeneous Si
V
V
GE = -8 V
CC = 300 V
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
Tj = 150 °C
Err
13
mJ
Rth(j-c)
per diode
0.11
K/W
Freewheeling diode
• UL recognised file no. E63532
IF = 600 A
VF = VEC
Tj = 25 °C
1.3
1.3
1.5
1.5
V
V
Typical Applications*
V
GE = 0 V
Tj = 150 °C
chip
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
0.9
0.75
0.4
1
1.1
0.95
0.7
V
V
0.85
0.6
0.8
350
63
mΩ
mΩ
A
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
0.7
0.9
IF = 600 A
di/dtoff = 3800 A/µs
IRRM
Qrr
µC
V
V
GE = -8 V
CC = 300 V
Tj = 150 °C
Err
13
mJ
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Rth(j-c)
per diode
0.11
K/W
Module
LCE
20
0.7
1
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
res., terminal-chip
TC = 125 °C
Rth(c-s)
Ms
per module
0.04
to heat sink (M5)
3
5
5
to terminals (M6)
Mt
2.5
w
300
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
B100/125
K
GAL
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX603GAL066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX603GAL066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX603GAL066HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5
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