SK100GD066T_07 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK100GD066T_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：769K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK100GD066T
ꢚ 3#45*"ꢊꢂꢏꢃꢄꢄꢉꢋꢕꢃꢆꢇꢌꢄꢃꢄꢒꢃꢅꢌ&ꢌꢃꢎ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢄ
Values
Units
1*ꢗꢖ
ꢚ63#45*
899
!94
;4
1
+
+
ꢙ*
ꢚ63!:45*
ꢚꢄ3#45*
ꢚꢄ3:95*
ꢙ*<ꢘ
1(ꢗꢖ
ꢋꢒꢄꢅ
ꢙ*<ꢘ3#'ꢙ*ꢂꢉꢈ
#99
=#9
8
+
1
1**3$891>1(ꢗ?#91> ꢚ63!#45*
1*ꢗꢖ@8991
Aꢄ
®
SEMITOP 4
Inverse Diode
ꢙꢐ
ꢚ63!:45*
ꢚꢄ3#45*
ꢚꢄ3:95*
BB
:B
+
+
IGBT Module
ꢙꢐ<ꢘ
ꢙꢐ<ꢘ3#'ꢙꢐꢂꢉꢈ
!#9
+
Module
ꢙꢋC<ꢘꢖD
+
5*
5*
1
SK100GD066T
ꢚ%6
EF9222G!49
EF9222G!#4
#499
ꢚꢄꢋꢍ
1ꢌꢄꢉꢏ
Target Data
+*"!ꢈꢌꢂ2
ꢚ 3#45*"ꢊꢂꢏꢃꢄꢄꢉꢋꢕꢃꢆꢇꢌꢄꢃꢄꢒꢃꢅꢌ&ꢌꢃꢎ
Characteristics
Symbol Conditions
IGBT
ꢄ
Features
min.
typ.
max. Units
ꢁꢂꢃꢄꢅꢆꢃꢇꢈꢉꢊꢂꢋꢌꢂꢍꢈꢉꢎꢊꢏꢃ
ꢐꢊꢏꢏꢑꢅꢉꢈꢒꢓꢋꢌꢔꢏꢃꢇꢌꢋꢕ
ꢖꢗꢘꢙꢚꢁꢛ !"#"$
ꢀ
ꢀ
1(ꢗCꢋꢕD
1(ꢗ31*ꢗ"ꢙ*3!"8ꢈ+
4
4";
8"4
1
ꢈ+
ꢈ+
ꢂ+
ꢂ+
1
ꢙ*ꢗꢖ
1(ꢗ391"1*ꢗ31*ꢗꢖ
1*ꢗ391"1(ꢗ3#91
ꢚ63#45*
ꢚ63!#45*
ꢚ63#45*
ꢚ63!#45*
ꢚ63#45*
ꢚ63!495*
ꢚ63#45*
ꢙꢈꢒꢆꢉ%ꢃꢎꢋꢕꢃꢆꢈꢓꢏꢒꢃꢆ&ꢉꢆꢈꢓꢂꢅꢃꢄ
ꢔꢑꢓꢏꢊꢈꢌꢂꢌꢊꢈꢉ'ꢌꢎꢃꢄꢊꢔꢄꢋꢆꢓꢋꢃ
ꢀ
ꢚꢆꢃꢂꢅꢕꢙ()ꢚꢋꢃꢅꢕꢂꢉꢏꢉꢍꢑ
*+,ꢋꢃꢅꢕꢂꢉꢏꢉꢍꢑꢐ-.
ꢙꢂꢋꢃꢍꢆꢓꢋꢃꢎ/ꢚ*ꢋꢃꢈꢒꢃꢆꢓꢋꢊꢆꢃ
ꢄꢃꢂꢄꢉꢆ
ꢙ(ꢗꢖ
899
ꢀ
ꢀ
ꢀ
1*ꢗ9
9"B
9";
!"!
!
1
ꢆ*ꢗ
1(ꢗ3!41
4"4
:"4
ꢈH
ꢈH
1
Typical Applications
ꢚ63!495*
;"4
!9"4
!";4
#"94
ꢙꢂ%ꢃꢆꢋꢃꢆꢊꢒꢋꢉ##01+
ꢚꢑꢒ2ꢈꢉꢋꢉꢆꢒꢉꢇꢃꢆ!!0-
ꢀ
ꢀ
1*ꢗCꢄꢓꢋD
ꢙ*ꢂꢉꢈ3!99+"1(ꢗ3!41 ꢚ63#45*ꢅꢕꢌꢒꢏꢃ%2
ꢚ63!495*ꢅꢕꢌꢒꢏꢃ%2
!"F4
!"84
1
*
8"!
ꢂꢐ
ꢂꢐ
ꢌꢃꢄ
*
1*ꢗ3#4"1(ꢗ391
&3!ꢘIJ
9"$;
ꢉꢃꢄ
*
9"!;
ꢂꢐ
ꢆꢃꢄ
ꢋꢎCꢉꢂD
ꢋꢆ
!$F
!#4
;"!
ꢂꢄ
ꢂꢄ
ꢈK
ꢂꢄ
ꢂꢄ
<(ꢉꢂ3FFH
<(ꢉ&&3FFH
1**3$991
ꢙ*ꢂꢉꢈ3!99+
ꢚ63!#45*
ꢗꢉꢂ
ꢋꢎCꢉ&&D
ꢋ&
!!$!
;8
1(ꢗ3E:LG!41
ꢗꢉ&&
F"4
ꢈK
<
ꢒꢃꢆꢙ()ꢚ
9"84
ML-
ꢋꢕC6EꢄD
GD-T
1
14-09-2007 DIL
© by SEMIKRON
SK100GD066T
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
1ꢐ31ꢗ*
ꢙꢐꢂꢉꢈ3!99+>1(ꢗ391 ꢚ63#45*ꢅꢕꢌꢒꢏꢃ%2
!"#4
!"#
1
1
ꢚ63!495*ꢅꢕꢌꢒꢏꢃ%2
ꢚ63#45*
1ꢐ9
9"B4
9";4
$
1
ꢚ63!495*
ꢚ63#45*
1
ꢆꢐ
ꢈH
ꢈH
ꢚ63!495*
ꢚ63!#45*
$"4
ꢙ<<ꢘ
Nꢆꢆ
ꢙꢐꢂꢉꢈ3!99+
F9
#9
+
ꢎꢌLꢎꢋ3#4:4+LAꢄ
A*
®
SEMITOP 4
ꢗꢆꢆ
1**3$991
ꢒꢃꢆꢎꢌꢉꢎꢃ
$"F
9";
ꢈK
<
ML-
ꢋꢕC6EꢄD.
IGBT Module
ꢘꢄ
ꢇ
ꢋꢉꢕꢃꢓꢋꢄꢌꢂ0
$"4
/ꢈ
ꢍ
89
Temperature sensor
SK100GD066T
<
ꢚꢄ3!995*C<#4340HD
FB$=4O
H
!99
Target Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
ꢁꢂꢃꢄꢅꢆꢃꢇꢈꢉꢊꢂꢋꢌꢂꢍꢈꢉꢎꢊꢏꢃ
ꢐꢊꢏꢏꢑꢅꢉꢈꢒꢓꢋꢌꢔꢏꢃꢇꢌꢋꢕ
ꢖꢗꢘꢙꢚꢁꢛ !"#"$
ꢀ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢙꢈꢒꢆꢉ%ꢃꢎꢋꢕꢃꢆꢈꢓꢏꢒꢃꢆ&ꢉꢆꢈꢓꢂꢅꢃꢄ
ꢔꢑꢓꢏꢊꢈꢌꢂꢌꢊꢈꢉ'ꢌꢎꢃꢄꢊꢔꢄꢋꢆꢓꢋꢃ
ꢀ
ꢚꢆꢃꢂꢅꢕꢙ()ꢚꢋꢃꢅꢕꢂꢉꢏꢉꢍꢑ
*+,ꢋꢃꢅꢕꢂꢉꢏꢉꢍꢑꢐ-.
ꢙꢂꢋꢃꢍꢆꢓꢋꢃꢎ/ꢚ*ꢋꢃꢈꢒꢃꢆꢓꢋꢊꢆꢃ
ꢄꢃꢂꢄꢉꢆ
ꢀ
ꢀ
ꢀ
Typical Applications
ꢙꢂ%ꢃꢆꢋꢃꢆꢊꢒꢋꢉ##01+
ꢚꢑꢒ2ꢈꢉꢋꢉꢆꢒꢉꢇꢃꢆ!!0-
ꢀ
ꢀ
GD-T
2
14-09-2007 DIL
© by SEMIKRON
SK100GD066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
14-09-2007 DIL
© by SEMIKRON
SK100GD066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
14-09-2007 DIL
© by SEMIKRON
SK100GD066T
*ꢓꢄꢃꢚ:FCꢖꢊꢍꢍꢃꢄꢋꢃꢎꢕꢉꢏꢃꢎꢌꢓꢈꢃꢋꢃꢆ&ꢉꢆꢋꢕꢃꢄꢉꢏꢎꢃꢆꢒꢌꢂꢄꢌꢂꢋꢕꢃꢅꢌꢆꢅꢊꢌꢋꢔꢉꢓꢆꢎP#ꢈꢈ2ꢖꢊꢍꢍꢃꢄꢋꢃꢎꢕꢉꢏꢃꢎꢌꢓꢈꢃꢋꢃꢆ&ꢉꢆꢋꢕꢃ
ꢈꢉꢊꢂꢋꢌꢂꢍꢒꢌꢂꢄꢌꢂꢋꢕꢃꢅꢌꢆꢅꢊꢌꢋꢔꢉꢓꢆꢎP$"8ꢈꢈD
*ꢓꢄꢃꢚ:F
(.Eꢚ
5
14-09-2007 DIL
© by SEMIKRON
相关型号：
SK100K025R1
Aluminum Electrolytic Capacitor, Polarized, Aluminum, 25V, 10% +Tol, 10% -Tol, 10uF,
CDE
SK100K035ET
Aluminum Electrolytic Capacitor, Polarized, Aluminum, 35V, 10% +Tol, 10% -Tol, 10uF,
CDE
SK100K063R1
Aluminum Electrolytic Capacitor, Polarized, Aluminum, 63V, 10% +Tol, 10% -Tol, 10uF,
CDE
SK100K100E4
Aluminum Electrolytic Capacitor, Polarized, Aluminum, 100V, 10% +Tol, 10% -Tol, 10uF,
CDE
©2020 ICPDF网 联系我们和版权申明