SK10GHR123I [SEMIKRON]
Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE T36, 13 PIN;
| 型号： | SK10GHR123I |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, CASE T36, 13 PIN 局域网 栅 功率控制 晶体管 |
| 文件： | 总4页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 10 GHR 123 I
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Absolute Maximum Ratings
Symbol Conditions
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Characteristics
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Preliminary Data
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1
11-09-2003 SCT
© by SEMIKRON
SK 10 GHR 123 I
Fig.5 Typ. output characteristic, tp = 80 µs, 25 °C
Fig. 6 Typ. output characteristic, tp = 80 µs, 125 °C
Fig. 7 Turn-on / -off energy = f (IC)
Fig. 8 Turn-on / -off energy = f (RG)
Fig. 9 Typ. gate charge characteristic
Fig. 10 Typ. capacitances vs. VCE
2
11-09-2003 SCT
© by SEMIKRON
SK 10 GHR 123 I
Fig. 11 Typ. switching times vs. IC
Fig. 12 Typ. switching times vs. gate resistor RG
Fig.13 Diode turn-off energy dissipation per pulse
3
11-09-2003 SCT
© by SEMIKRON
SK 10 GHR 123 I
Dimensions in mm
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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
11-09-2003 SCT
© by SEMIKRON
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