SK200GB12T4TP [SEMIKRON]

Insulated Gate Bipolar Transistor,;
SK200GB12T4TP
型号: SK200GB12T4TP
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Insulated Gate Bipolar Transistor,

文件: 总4页 (文件大小:285K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SK200GB12T4Tp  
Absolute Maximum Ratings  
Symbol Conditions  
Inverter - IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
210  
170  
200  
600  
V
A
A
A
A
V
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3 x ICnom  
VCC = 800 V  
-20 ... 20  
SEMITOP® 4 Press-Fit  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
IGBT module  
Inverse - Diode  
Tj = 25 °C  
Engineering Sample  
SK200GB12T4Tp  
Target Data  
VRRM  
IF  
1200  
190  
V
A
Ts = 25 °C  
Ts = 70 °C  
Tj = 175 °C  
151  
A
IFnom  
IFRM  
IFSM  
Tj  
200  
A
Features  
IFRM = 3 x IFnom  
10 ms, sin 180°, Tj = 150 °C  
600  
A
• One screw mounting module  
• Solder free mounting with Press-Fit  
terminals  
990  
A
-40 ... 175  
°C  
• Fully compatible with SEMITOP® 2 and  
3 Press-Fit  
Module  
It(RMS)  
Tstg  
Tterminal = 100 °C, TS = 60°C  
40  
-40 ... 125  
2500  
A
°C  
V
• Improved thermal performances by  
aluminum oxide substrate  
Visol  
AC, sinusoidal, 50Hz, t = 1 min  
• Trench4 IGBT technology  
• CAL4F diode technology  
• Integrated PTC temperature sensor  
• UL recognized, file no. E 63 532  
Characteristics  
Symbol Conditions  
Inverter - IGBT  
min.  
typ.  
max.  
Unit  
Typical Applications*  
• Switching SR Drives  
• Inverter  
IC = 200 A  
Tj = 25 °C  
VCE(sat)  
1.80  
2.20  
2.05  
2.40  
V
V
V
GE = 15 V  
Tj = 150 °C  
• Switched mode power supplies  
• UPS  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.80  
0.70  
5.0  
7.5  
5.8  
0.90  
0.80  
5.8  
8.0  
6.5  
V
V
mΩ  
mΩ  
V
chiplevel  
VGE = 15 V  
chiplevel  
VGE = VCE, IC = 12 mA  
VGE = 0 V, VCE = 1200 V, Tj = 25 °C  
f = 1 MHz  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
Eoff  
Rth(j-s)  
5
2.66  
mA  
nF  
nF  
nF  
nC  
Ω
ns  
ns  
mJ  
ns  
ns  
12.3  
0.81  
0.69  
1130  
3.8  
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
-8V...+15V  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VCC = 600 V  
I
C = 200 A  
R
R
G on = 2 Ω  
G off = 2 Ω  
13.6  
VGE = +15/-15 V  
per IGBT  
22.1  
0.28  
mJ  
K/W  
GB-T  
© by SEMIKRON  
Rev. 0.1 – 09.02.2017  
1
SK200GB12T4Tp  
Characteristics  
Symbol Conditions  
Inverse - Diode  
min.  
typ.  
max.  
Unit  
IF = 200 A  
Tj = 25 °C  
VF = VEC  
2.20  
2.15  
2.52  
2.47  
V
V
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VF0  
1.30  
0.90  
4.5  
6.3  
-
1.50  
1.10  
5.1  
V
V
mΩ  
mΩ  
A
chiplevel  
rF  
chiplevel  
6.9  
SEMITOP® 4 Press-Fit  
IF = 200 A  
IRRM  
Qrr  
-
µC  
VGE = -15 V  
Tj = 150 °C  
Err  
13.4  
0.35  
mJ  
IGBT module  
V
CC = 600 V  
Rth(j-s)  
per Diode  
K/W  
Engineering Sample  
SK200GB12T4Tp  
Target Data  
Module  
LCE  
Ms  
t.b.d.  
60  
nH  
Nm  
g
to heatsink  
2.5  
2.75  
w
Features  
Temperature Sensor  
• One screw mounting module  
• Solder free mounting with Press-Fit  
terminals  
1670 ±  
3%  
R100  
Tr=100°C (R25=1000Ω)  
Ω
• Fully compatible with SEMITOP® 2 and  
3 Press-Fit  
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2  
], A = 7.635*10-3 °C-1,  
R(T)  
B = 1.731*10-5 °C-2  
• Improved thermal performances by  
aluminum oxide substrate  
• Trench4 IGBT technology  
• CAL4F diode technology  
• Integrated PTC temperature sensor  
• UL recognized, file no. E 63 532  
Typical Applications*  
• Switching SR Drives  
• Inverter  
• Switched mode power supplies  
• UPS  
GB-T  
2
Rev. 0.1 – 09.02.2017  
© by SEMIKRON  
SK200GB12T4Tp  
SEMITOP 4 Press-Fit  
GB-T  
© by SEMIKRON  
Rev. 0.1 – 09.02.2017  
3
SK200GB12T4Tp  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.  
*IMPORTANT INFORMATION AND WARNINGS  
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics  
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in  
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective  
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their  
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical  
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is  
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written  
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of  
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is  
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,  
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the  
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual  
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of  
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain  
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document  
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make  
changes.  
In accordance with the quality guidelines of SEMIKRON, we would like to point out that the products are engineering samples. These  
engineering samples are not yet produced under quality conditions approaching those of series production, and are at the present time not  
included in the SEMIKRON quality monitoring and control process. Neither the product nor the production process has to date gone completely  
through the SEMIKRON internal authorization procedure. SEMIKRON may make any amendments without any prior notification. SEMIKRON  
cannot and shall not promise or commit itself to release and/or make available a final version or series product after the development phase.  
SEMIKRON cannot and will not assume any responsibility with regard to freedom from defects, functionality, and adaptation to and interaction  
with possible applications of the user or with regard to any other potential risks resulting from the use of engineering samples. Therefore  
SEMIKRON explicitly excludes any warranty and liability; as far as legally possible. The customer shall fully indemnify and hold harmless  
SEMIKRON from any and all risks, damages, losses, expenses and costs directly or indirectly resulting out of or in connection with the  
commissioning, operation, system integration, sale, dissemination or any other kind of use of engineering samples by the customer and/or any  
third party, which has come into possession of engineering samples through or because of the customer. All know-how and all registerable  
and non-registerable copyrights and industrial property rights arising from or in connection with these engineering samples remain the  
exclusive property of SEMIKRON.  
4
Rev. 0.1 – 09.02.2017  
© by SEMIKRON  

相关型号:

SK200GD066T

3-phase bridge inverter
SEMIKRON

SK200GD066T_07

IGBT Module
SEMIKRON

SK200GD066T_09

IGBT Module
SEMIKRON

SK200M0150A3S32230

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 150uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0150APS12230

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 150uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0150B2S11836

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 150uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0150B5S81836

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 150uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0220A1SV2235

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 220uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0220B1SV2235

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 220uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0270A3S-2240

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 270uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0270A3S32240

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 270uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO

SK200M0270A7FM2240

Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 200V, 20% +Tol, 20% -Tol, 270uF, Through Hole Mount, RADIAL LEADED, ROHS COMPLIANT
YAGEO