SK30GAL128 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK30GAL128 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：690K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 30 GB 128
$ % +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
'
0+11
3 +1
'
'
7
7
ꢁ/"
'
2/"
)
)
$ꢊ % +, ꢘ41 -ꢁ5
6, ꢘ+,
:1 ꢘ,1
ꢁ
ꢇꢄ 9 0 ꢃꢊ5 $ꢊ % +, ꢘ41 -ꢁ5
ꢁ8
$
& <1 === > 0,1
-ꢁ
;
Inverse/Freewheeling CAL diode
)
$ꢊ % +, ꢘ41 -ꢁ5
6: ꢘ+,
:< ꢘ,1
7
7
?
®
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ꢇꢄ 9 0 ꢃꢊ5 $ꢊ % +, ꢘ41 -ꢁ5
SEMITOP 2
$
& <1 === > 0,1
-ꢁ
;
$
$
& <1 === > 0+,
+@1
-ꢁ
-ꢁ
ꢊꢇꢌ
IGBT Module
$ꢉꢏꢃꢋꢍꢅꢔꢊ. 01 ꢊ
ꢊꢂꢔ
'
7ꢁ ,1 ꢒA. ꢏ=ꢃ=ꢊ= 0 ꢃꢋꢍ= B 0 ꢊ
+,11 B 6111
'
ꢋꢊꢂꢔ
SK 30 GB 128
SK 30 GAL 128
SK 30 GAR 128
Preliminary Data
$ % +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
min.
typ.
max. Units
'
)
ꢁ % +, 7. $; % +, ꢘ0+, -ꢁ
0.C ꢘ+.0
,.,
'
ꢁ/ꢘꢊꢅꢇ
'
'ꢁ/ % '2/5 )ꢁ % 7
<.,
@.,
0
'
2/ꢘꢇꢕ
ꢁꢋꢉꢊ
'ꢁ/ % +, '5 '2/ % 1 '5 0 8ꢒA
+.,
ꢍ?
Dꢇꢕꢘ;&ꢊ
ꢄꢉꢏ )2ꢚ$
EBF
Features
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
EBF
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ
ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢋꢍꢌ ꢅꢔꢑꢃꢋꢍꢋꢑꢃ
ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢚꢁ
ꢀ
ꢀ
ꢀ
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG
ꢇꢈꢘꢂꢍ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓ
ꢇꢓ
'ꢁꢁ % @11 ' . '2/ % 3 0, '
,,
+@
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
)ꢁ % 61 7. $; % 0+, -ꢁ
D2ꢂꢍ % D2ꢂꢓꢓ % 0, H
+4<
<1
/ꢂꢍ > /ꢂꢓꢓ
)ꢍꢈꢑꢆꢇꢋ(ꢉ ꢔꢂꢅꢈ
<.CC
ꢃI
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ!
"#$%"ꢂꢓꢇ&#ꢑꢍꢇꢆꢕ&$ꢕꢏꢂꢑꢌꢕ
ꢇꢉꢆꢕꢍꢂꢔꢂꢌ!
ꢀ
ꢀ
Inverse/Freewheeling CAL diode
'? % '/ꢁ
)
? % +, 75 $; % +, ꢘ0+, -ꢁ
+ ꢘ0.4
ꢘ0
'
'
'
$; % ꢘ0+, -ꢁ
$; % ꢘ0+, -ꢁ
ꢘ0.+
ꢘ<<
ꢘ$ꢎ
ꢏ$
ꢘ6+
ꢃH
'
ꢐꢋꢇꢕ ꢄꢂꢊꢋꢇꢋ(ꢉ ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ
ꢀ
ꢆꢉꢘꢊꢅꢇ
Dꢇꢕꢘ;&ꢊ
0.+
EBF
Typical Applications
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG
"ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ
)ꢍ(ꢉꢏꢇꢉꢏ
"ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
*#"
ꢀ
ꢀ
ꢀ
ꢀ
)
)
? % ++ 75 'D % @11 '
ꢈ)?Bꢈꢇ % &,11 7BKꢊ
2/ % 1 '5 $; % 0+, -ꢁ
+,
7
DD8
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<.,
Kꢁ
/
'
0
ꢃI
ꢂꢓꢓ
Mechanical data
80
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏLꢑꢉ
+
Mꢃ
ꢌ
ꢐ
0C
ꢁꢅꢊꢉ
"/8)$ꢎ#N
+
$ 4
GAL
GAR
GB
1
23-02-2006 RAM
© by SEMIKRON
SK 30 GB 128
Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
23-02-2006 RAM
© by SEMIKRON
SK 30 GB 128
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Typ. Freewheeling diode forward characteristic
3
23-02-2006 RAM
© by SEMIKRON
SK 30 GB 128
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ $4
27O
27D
2ꢚ
"*22/"$/ꢙ ꢒꢎO/ꢙ)78/$/D ?ꢎD $ꢒ/ "ꢎOꢙ/D #)M" 7Mꢙ $ꢒ/ 8ꢎ*M$)M2 #)M" )M $ꢒ/
#ꢁꢚG + ꢃꢃ
ꢁꢅꢊꢉ $4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
23-02-2006 RAM
© by SEMIKRON
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