SK30GB123_07 [SEMIKRON]

IGBT Module; IGBT模块
SK30GB123_07
型号: SK30GB123_07
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

IGBT Module
IGBT模块

双极性晶体管
文件: 总5页 (文件大小:656K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SK30GB123  
# + ,- .ꢁ/ ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Units  
0ꢁ1(  
#2 + ,- .ꢁ  
4,55  
66  
0
7
7
$
#2 + 4,- .ꢁ  
# + ,- .ꢁ  
# + 85 .ꢁ  
,,  
$
$
ꢁ9:+ ,  $ꢁꢍꢂꢃ  
-5  
; ,5  
45  
7
0
ꢁ9:  
0%1(  
ꢄꢊꢆ  
0ꢁꢁ + <55 0= 0%1 > ,5 0= #2 + 4,- .ꢁ  
0ꢁ1( ? 4,55 0  
@ꢊ  
®
SEMITOP 2  
Inverse Diode  
$
#2 + 4-5 .ꢁ  
# + ,- .ꢁ  
# + 85 .ꢁ  
6B  
,-  
7
7
A
IGBT Module  
$
$
$
A9:+ ,  $Aꢍꢂꢃ  
7
7
A9:  
 + 45 ꢃꢊ= ꢕꢅꢔꢓ ꢊꢋꢍꢉ ꢐꢅ)ꢉ #2 + 4-5 .ꢁ  
6-5  
A(:  
SK30GB123  
Module  
SK30GAL123  
SK30GAR123  
Preliminary Data  
$
7
.ꢁ  
.ꢁ  
0
ꢇꢘ9:(ꢛ  
#
!C5 DDD E4-5  
!C5 DDD E4,-  
,-55  
)2  
#
ꢊꢇꢌ  
0ꢋꢊꢂꢔ  
7ꢁ/ 4 ꢃꢋꢍD  
Features  
# + ,- .ꢁ/ ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ  
Characteristics  
Symbol Conditions  
IGBT  
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ  
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ  
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ  
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ  
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ  
min.  
typ.  
max. Units  
0%1ꢘꢇꢕꢛ  
0%1 + 0ꢁ1/ $ + 4 ꢃ7  
C/-  
-/-  
</-  
0
ꢃ7  
ꢃ7  
ꢍ7  
ꢍ7  
0
$
0%1 + 5 0/ 0ꢁ1 + 0ꢁ1(  
0ꢁ1 + 5 0/ 0%1 + 65 0  
#2 + ,- .ꢁ  
5/4-  
ꢁ1(  
 !ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ  
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ "#! ꢂꢍ  
ꢄꢑꢍꢆꢕ!ꢇꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ  
#2 + 4,- .ꢁ  
#2 + ,- .ꢁ  
$
4,5  
%1(  
#2 + 4,- .ꢁ  
#2 + ,- .ꢁ  
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ&  
'ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ  
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ  
0ꢁ15  
4/,  
4/,  
-,  
#2 + 4,- .ꢁ  
#2 + ,-.ꢁ  
0
ꢁ1  
0%1 + 4- 0  
ꢃF  
ꢃF  
0
Typical Applications  
#2 + 4,-.ꢁ  
#2 + ,-.ꢁꢆꢕꢋꢄꢔꢉ)D  
#2 + 4,-.ꢁꢆꢕꢋꢄꢔꢉ)D  
B<  
(ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ  
$ꢍ)ꢉꢏꢇꢉꢏ  
(ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ  
*"(  
0ꢁ1ꢘꢊꢅꢇꢛ  
$ꢁꢍꢂꢃ + ,- 7/ 0%1 + 4- 0  
,
,/-  
6/4  
6
6/B  
0
ꢋꢉꢊ  
4/<-  
5/,-  
ꢍA  
ꢍA  
ꢂꢉꢊ  
0ꢁ1 + ,-/ 0%1 + 5 0  
 + 4 :ꢒG  
ꢏꢉꢊ  
5/44  
ꢍA  
ꢈꢘꢂꢍꢛ  
 
C5  
C-  
ꢍꢊ  
ꢍꢊ  
ꢃH  
ꢍꢊ  
ꢍꢊ  
9%ꢂꢍ + ,- F  
9%ꢂꢓꢓ + ,- F  
0ꢁꢁ + <550  
1ꢂꢍ  
ꢈꢘꢂꢓꢓꢛ  
 
$ꢁꢍꢂꢃ+ ,-7  
6/-  
655  
C-  
#2 + 4,- .ꢁ  
0%1+;4-0  
1ꢂꢓꢓ  
,/<  
ꢃH  
9ꢇꢕꢘ2!ꢊꢛ  
ꢄꢉꢏ $%ꢚ#  
4
IJK  
GB  
GAL  
GAR  
1
08-03-2007 SCT  
© by SEMIKRON  
SK30GB123  
Characteristics  
Symbol Conditions  
Inverse Diode  
min.  
typ.  
max. Units  
0A + 01ꢁ  
$Aꢍꢂꢃ + ,- 7= 0%1 + 5 0  
#2 + ,- .ꢁꢆꢕꢋꢄꢔꢉ)D  
#2 + 4,- .ꢁꢆꢕꢋꢄꢔꢉ)D  
,
,/-  
,/6  
0
0
4/8  
0A5  
A  
#2 + 4,- .ꢁ  
4
4/,  
CC  
0
#2 + 4,- .ꢁ  
#2 + 4,- .ꢁ  
6,  
ꢃF  
$
$Aꢍꢂꢃ + ,, 7  
,-  
7
99:  
Lꢏꢏ  
1ꢏꢏ  
ꢈꢋJꢈꢇ + !-55 7J@ꢊ  
C/-  
@ꢁ  
0ꢁꢁ+ <550  
4
ꢃH  
IJK  
 ꢃ  
®
SEMITOP 2  
9ꢇꢕꢘ2!ꢊꢛꢙ  
ꢄꢉꢏ ꢈꢋꢂꢈꢉ  
4/,  
,
:
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍM :4  
IGBT Module  
4N  
SK30GB123  
SK30GAL123  
SK30GAR123  
Preliminary Data  
This is an electrostatic discharge sensitive device (ESDS), international standard  
IEC 60747-1, Chapter IX.  
This technical information specifies semiconductor devices but promises no  
characteristics. No warranty or guarantee expressed or implied is made regarding  
delivery, performance or suitability.  
Features  
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ  
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ  
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ  
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ  
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ  
 !ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ  
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ "#! ꢂꢍ  
ꢄꢑꢍꢆꢕ!ꢇꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ  
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ&  
'ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ  
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ  
Typical Applications  
(ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ  
$ꢍ)ꢉꢏꢇꢉꢏ  
(ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ  
*"(  
GB  
GAL  
GAR  
2
08-03-2007 SCT  
© by SEMIKRON  
SK30GB123  
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 3 Typ. turn-on /-off energy = f (IC)  
Fig. 4 Typ. turn-on /-off energy = f (RG)  
Fig. 6 Typ. gate charge characteristic  
3
08-03-2007 SCT  
© by SEMIKRON  
SK30GB123  
Fig. 7 Typ. switching times vs. IC  
Fig. 8 Typ. switching times vs. gate resistor RG  
Fig. 10 CAL diode forward characteristic  
4
08-03-2007 SCT  
© by SEMIKRON  
SK30GB123  
UL recognized file  
no. E 63 532  
ꢁꢅꢊꢉ #8 ꢘ(ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ/ ꢋꢍ ꢇꢕꢉ "ꢁꢚ/ ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊO ,ꢃꢃꢛ  
ꢁꢅꢊꢉ #8  
%79  
ꢁꢅꢊꢉ #8  
%7'  
ꢁꢅꢊꢉ #8  
%ꢚ  
5
08-03-2007 SCT  
© by SEMIKRON  

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