SK30GB123_07 [SEMIKRON]
IGBT Module; IGBT模块型号: | SK30GB123_07 |
厂家: | SEMIKRON INTERNATIONAL |
描述: | IGBT Module |
文件: | 总5页 (文件大小:656K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SK30GB123
# + ,- .ꢁ/ ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
0ꢁ1(
#2 + ,- .ꢁ
4,55
66
0
7
7
$
#2 + 4,- .ꢁ
#ꢊ + ,- .ꢁ
#ꢊ + 85 .ꢁ
ꢁ
,,
$
$
ꢁ9:+ , ꢗ $ꢁꢍꢂꢃ
-5
; ,5
45
7
0
ꢁ9:
0%1(
ꢇꢄꢊꢆ
0ꢁꢁ + <55 0= 0%1 > ,5 0= #2 + 4,- .ꢁ
0ꢁ1( ? 4,55 0
@ꢊ
®
SEMITOP 2
Inverse Diode
$
#2 + 4-5 .ꢁ
#ꢊ + ,- .ꢁ
#ꢊ + 85 .ꢁ
6B
,-
7
7
A
IGBT Module
$
$
$
A9:+ , ꢗ $Aꢍꢂꢃ
7
7
A9:
ꢇꢄ + 45 ꢃꢊ= ꢕꢅꢔꢓ ꢊꢋꢍꢉ ꢐꢅ)ꢉ #2 + 4-5 .ꢁ
6-5
A(:
SK30GB123
Module
SK30GAL123
SK30GAR123
Preliminary Data
$
7
.ꢁ
.ꢁ
0
ꢇꢘ9:(ꢛ
#
!C5 DDD E4-5
!C5 DDD E4,-
,-55
)2
#
ꢊꢇꢌ
0ꢋꢊꢂꢔ
7ꢁ/ 4 ꢃꢋꢍD
Features
# + ,- .ꢁ/ ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
0%1ꢘꢇꢕꢛ
0%1 + 0ꢁ1/ $ꢁ + 4 ꢃ7
C/-
-/-
</-
0
ꢃ7
ꢃ7
ꢍ7
ꢍ7
0
$
0%1 + 5 0/ 0ꢁ1 + 0ꢁ1(
0ꢁ1 + 5 0/ 0%1 + 65 0
#2 + ,- .ꢁ
5/4-
ꢁ1(
!ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ "#! ꢂꢍ
ꢄꢑꢍꢆꢕ!ꢇꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ
ꢀ
#2 + 4,- .ꢁ
#2 + ,- .ꢁ
$
4,5
%1(
#2 + 4,- .ꢁ
#2 + ,- .ꢁ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ&
'ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
ꢀ
ꢀ
0ꢁ15
4/,
4/,
-,
#2 + 4,- .ꢁ
#2 + ,-.ꢁ
0
ꢏꢁ1
0%1 + 4- 0
ꢃF
ꢃF
0
Typical Applications
#2 + 4,-.ꢁ
#2 + ,-.ꢁꢆꢕꢋꢄꢔꢉ)D
#2 + 4,-.ꢁꢆꢕꢋꢄꢔꢉ)D
B<
(ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ
$ꢍ)ꢉꢏꢇꢉꢏ
(ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
*"(
ꢀ
ꢀ
ꢀ
ꢀ
0ꢁ1ꢘꢊꢅꢇꢛ
$ꢁꢍꢂꢃ + ,- 7/ 0%1 + 4- 0
,
,/-
6/4
6
6/B
0
ꢁꢋꢉꢊ
4/<-
5/,-
ꢍA
ꢍA
ꢁꢂꢉꢊ
0ꢁ1 + ,-/ 0%1 + 5 0
ꢓ + 4 :ꢒG
ꢁꢏꢉꢊ
5/44
ꢍA
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
C5
C-
ꢍꢊ
ꢍꢊ
ꢃH
ꢍꢊ
ꢍꢊ
9%ꢂꢍ + ,- F
9%ꢂꢓꢓ + ,- F
0ꢁꢁ + <550
1ꢂꢍ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
$ꢁꢍꢂꢃ+ ,-7
6/-
655
C-
#2 + 4,- .ꢁ
0%1+;4-0
1ꢂꢓꢓ
,/<
ꢃH
9ꢇꢕꢘ2!ꢊꢛ
ꢄꢉꢏ $%ꢚ#
4
IJK
GB
GAL
GAR
1
08-03-2007 SCT
© by SEMIKRON
SK30GB123
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
0A + 01ꢁ
$Aꢍꢂꢃ + ,- 7= 0%1 + 5 0
#2 + ,- .ꢁꢆꢕꢋꢄꢔꢉ)D
#2 + 4,- .ꢁꢆꢕꢋꢄꢔꢉ)D
,
,/-
,/6
0
0
4/8
0A5
ꢏA
#2 + 4,- .ꢁ
4
4/,
CC
0
#2 + 4,- .ꢁ
#2 + 4,- .ꢁ
6,
ꢃF
$
$Aꢍꢂꢃ + ,, 7
,-
7
99:
Lꢏꢏ
1ꢏꢏ
ꢈꢋJꢈꢇ + !-55 7J@ꢊ
C/-
@ꢁ
0ꢁꢁ+ <550
4
ꢃH
IJK
ꢃ
ꢌ
®
SEMITOP 2
9ꢇꢕꢘ2!ꢊꢛꢙ
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
4/,
,
:
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍM :4
ꢊ
IGBT Module
ꢐ
4N
SK30GB123
SK30GAL123
SK30GAR123
Preliminary Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Features
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
!ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ "#! ꢂꢍ
ꢄꢑꢍꢆꢕ!ꢇꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ
ꢀ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ&
'ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
ꢀ
ꢀ
Typical Applications
(ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ
$ꢍ)ꢉꢏꢇꢉꢏ
(ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
*"(
ꢀ
ꢀ
ꢀ
ꢀ
GB
GAL
GAR
2
08-03-2007 SCT
© by SEMIKRON
SK30GB123
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
08-03-2007 SCT
© by SEMIKRON
SK30GB123
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
08-03-2007 SCT
© by SEMIKRON
SK30GB123
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ #8 ꢘ(ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ/ ꢋꢍ ꢇꢕꢉ "ꢁꢚ/ ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊO ,ꢃꢃꢛ
ꢁꢅꢊꢉ #8
%79
ꢁꢅꢊꢉ #8
%7'
ꢁꢅꢊꢉ #8
%ꢚ
5
08-03-2007 SCT
© by SEMIKRON
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