SK30GD066ET [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK30GD066ET |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：855K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK30GD066ET
0 53 6ꢁ2 ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
-
9 0 53 6ꢁ
;++
/+
-
$
$
ꢁ78
!
9 0 *<3 6ꢁ
ꢊ 0 53 6ꢁ
ꢊ 0 <+ 6ꢁ
ꢁ
1*
!
!
ꢁ=>0 5 ꢗ !ꢁꢍꢂꢃ
;+
? 5+
;
$
-
ꢁ=>
-
"78
ꢇꢄꢊꢆ
-
ꢁꢁ 0 1;+ -@ -"7 A 5+ -@ 9 0 *3+ 6ꢁ
Cꢊ
®
SEMITOP 3
-ꢁ78 B ;++ -
Inverse Diode
!
9 0 *<3 6ꢁ
ꢊ 0 53 6ꢁ
ꢊ 0 <+ 6ꢁ
1;
5D
$
$
IGBT Module
&
!
!
!
&=>0 5 ꢗ !&ꢍꢂꢃ
;+
$
$
&=>
ꢇꢄ 0 *+ ꢃꢊ@ ꢕꢅꢔꢓ ꢊꢋꢍꢉ ꢐꢅ)ꢉ 9 0 *3+ 6ꢁ
*;+
SK30GD066ET
&8>
Module
!
$
6ꢁ
6ꢁ
-
ꢇꢘ=>8ꢛ
E/+ ... F*<3
E/+ ... F*53
53++
Target Data
)9
ꢊꢇꢌ
-
$ꢁ2 * ꢃꢋꢍ.
ꢋꢊꢂꢔ
Features
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢏꢉꢍꢆꢕ !"ꢚ ꢇꢉꢆꢕꢍꢂꢔꢂꢌ#
ꢁ$% ꢇꢉꢆꢕꢍꢂꢔꢂꢌ# &'ꢙ
!ꢍꢇꢉꢌꢏꢅꢇꢉꢈ ( ꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
0 53 6ꢁ2 ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
min.
typ.
max. Units
-
-"7 0 -ꢁ72 !ꢁ 0 +2/1 ꢃ$
3
32D
;23
-
ꢃ$
ꢃ$
ꢍ$
ꢍ$
-
"7ꢘꢇꢕꢛ
!
-"7 0 + -2 -ꢁ7 0 -ꢁ78
9 0 53 6ꢁ
+2++*;
ꢀ
ꢀ
ꢀ
ꢁ78
9 0 *53 6ꢁ
9 0 53 6ꢁ
!
-ꢁ7 0 + -2 -"7 0 5+ -
1++
"78
9 0 *53 6ꢁ
9 0 53 6ꢁ
-
+2G
+2D
*2*
*
Typical Applications*
!ꢍ)ꢉꢏꢇꢉꢏ ꢑꢄ ꢇꢂ *+ ,-$
#ꢄ. ꢃꢂꢇꢂꢏ ꢄꢂꢐꢉꢏ / ,'
ꢁ7+
9 0 *3+ 6ꢁ
9 0 536ꢁ
-
ꢀ
ꢀ
ꢏꢁ7
-"7 0 *3 -
*D21
5D
53
ꢃH
ꢃH
-
9 0 *3+6ꢁ
9 0 536ꢁꢆꢕꢋꢄꢔꢉ).
9 0 *536ꢁꢆꢕꢋꢄꢔꢉ).
13
Remarks
-
!ꢁꢍꢂꢃ 0 1+ $2 -"7 0 *3 -
*2/3
*2;3
*2D3
52+3
ꢁ7ꢘꢊꢅꢇꢛ
-
0 1+++- $ꢁ23+ꢒ42*ꢊ
ꢀ
ꢋꢊꢂꢔ
-
ꢁꢋꢉꢊ
*2;1
+2**
ꢍ&
ꢍ&
ꢁꢂꢉꢊ
-
ꢁ7 0 532 -"7 0 + -
"70E<-...F*3-
ꢓ 0 * >ꢒ4
ꢁꢏꢉꢊ
I"
+2+3
5<3
ꢍ&
ꢍꢁ
-
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
5/
5<
ꢍꢊ
ꢍꢊ
ꢃK
ꢍꢊ
ꢍꢊ
=
"ꢂꢍ 0 53 H
ꢈꢋJꢈꢇ 0 5113 $JCꢊ
"ꢂꢓꢓ 0 53 H
-ꢁꢁ 0 1++-
7ꢂꢍ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
!ꢁ0 1+$
+2G<
15D
3/
=
9 0 *3+ 6ꢁ
ꢈꢋJꢈꢇ 0 5113 $JCꢊ
-"70E<JF*3-
7ꢂꢓꢓ
=
*2<<
*2;3
ꢃK
ꢄꢉꢏ !"ꢚ
LJ'
ꢇꢕꢘ9Eꢊꢛ
GD-ET
1
03-06-2009 DIL
© by SEMIKRON
SK30GD066ET
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
-& 0 -7ꢁ
!&ꢍꢂꢃ 0 1+ $@ -"7 0 + -
9 0 53 6ꢁꢆꢕꢋꢄꢔꢉ).
9 0 *3+ 6ꢁꢆꢕꢋꢄꢔꢉ).
9 0 53 6ꢁ
*2/3
*2/3
*
*2<
*2<
*2*
*
-
-
-
-
&+
9 0 *3+ 6ꢁ
9 0 53 6ꢁ
+2G
*3
-
ꢏ&
5+
ꢃH
ꢃH
9 0 *3+ 6ꢁ
9 0 *3+ 6ꢁ
*D
5121
®
!
!
ꢈꢋJꢈꢇ 0 5113 $JCꢊ
ꢁꢁ0 1++-
& 0 1+ $
1+
$
==>
SEMITOP 3
Iꢏꢏ
7ꢏꢏ
*2;
Cꢁ
-
+25;
52*
ꢃK
LJ'
(ꢃ
ꢌ
IGBT Module
=
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
ꢇꢕꢘ9Eꢊꢛꢙ
>
ꢐ
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍ,
5253
523
ꢊ
1+
SK30GD066ET
Temperature sensor
=
ꢊ 0*++6ꢁ ꢘ=5303,Hꢛ
/G1?3M
H
*++
Target Data
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢀ
ꢀ
ꢀ
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
ꢏꢉꢍꢆꢕ !"ꢚ ꢇꢉꢆꢕꢍꢂꢔꢂꢌ#
ꢁ$% ꢇꢉꢆꢕꢍꢂꢔꢂꢌ# &'ꢙ
!ꢍꢇꢉꢌꢏꢅꢇꢉꢈ ( ꢁ ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢊꢉꢍꢊꢂꢏ
ꢀ
ꢀ
ꢀ
Typical Applications*
!ꢍ)ꢉꢏꢇꢉꢏ ꢑꢄ ꢇꢂ *+ ,-$
#ꢄ. ꢃꢂꢇꢂꢏ ꢄꢂꢐꢉꢏ / ,'
ꢀ
ꢀ
Remarks
-
0 1+++- $ꢁ23+ꢒ42*ꢊ
ꢀ
ꢋꢊꢂꢔ
GD-ET
2
03-06-2009 DIL
© by SEMIKRON
SK30GD066ET
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
03-06-2009 DIL
© by SEMIKRON
SK30GD066ET
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
03-06-2009 DIL
© by SEMIKRON
SK30GD066ET
UL recognized
file no. E63 532
ꢁꢅꢊꢉ 35 ꢘ8ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ2 ꢋꢍ ꢇꢕꢉ Nꢁꢚ2 ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊO 5ꢃꢃꢛ
ꢁꢅꢊꢉ 35
"ꢙE7
5
03-06-2009 DIL
© by SEMIKRON
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