SK50GAR067 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK50GAR067 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：686K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK50GB067
# 2 34 5ꢁ) ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
(
#6 2 34 5ꢁ
899
;<
(
/
/
ꢁ*,
$
#6 2 :34 5ꢁ
#ꢊ 2 34 5ꢁ
#ꢊ 2 ;9 5ꢁ
ꢁ
4=
$
$
ꢁ>?2 3 ꢗ $ꢁꢍꢂꢃ
3=9
@ 39
:9
/
(
ꢁ>?
(
%*,
®
ꢇꢄꢊꢆ
(
ꢁꢁ 2 <99 (A (%* B 39 (A #6 2 :34 5ꢁ
Dꢊ
SEMITOP 3
(ꢁ*, C 899 (
Inverse Diode
IGBT Module
$
#6 2 :49 5ꢁ
#ꢊ 2 34 5ꢁ
#ꢊ 2 ;9 5ꢁ
E9
48
/
/
-
$
$
$
->?2 3 ꢗ $-ꢍꢂꢃ
/
/
->?
SK50GB067
SK50GAL067
SK50GAR067
Target Data
ꢇꢄ 2 :9 ꢃꢊA ꢊꢋꢍꢑꢊꢂꢋꢈꢅꢔ
#6 2 5ꢁ
<89
-,?
Freewheeling Diode
$
#6 2 :49 5ꢁ
#ꢊ 2 34 5ꢁ
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E9
48
/
/
-
$
$
/
/
->?
ꢇꢄ 2 ꢃꢊA
#6 2 5ꢁ
<89
-,?
Features
Module
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢀ
ꢀ
ꢀ
$
/
5ꢁ
5ꢁ
(
ꢇꢘ>?,ꢛ
#
&=9 FFF G:49
&=9 FFF G:34
3499
'6
#
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢊꢇꢌ
(
/ꢁ) : ꢃꢋꢍF
ꢋꢊꢂꢔ
ꢒ ꢄꢉꢏꢓꢅꢊꢇ !"# ꢇꢉꢆꢕꢍꢂꢔꢂꢌ $%ꢚ#
!&ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ!"#
ꢀ
ꢀ
# 2 34 5ꢁ) ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
min.
typ.
max. Units
!ꢂꢍ&"ꢑꢍꢆꢕ&#ꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ
"ꢂꢊꢋꢇꢋ'ꢉ (
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢀ
ꢀ
ꢀ
ꢆꢉ)ꢊꢅꢇ
(
(
(
(
%* 2 (ꢁ*) $ꢁ 2 :)3 ꢃ/
%* 2 9 () (ꢁ* 2 (ꢁ*,
ꢁ* 2 9 () (%* 2 39 (
<
=
4
9)99;
=;9
3
(
ꢃ/
ꢍ/
(
ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ ꢘ*ꢅꢊ ꢄꢅꢏꢅꢔꢔꢉꢔꢋꢍꢌꢛ
+ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
+ꢂꢐ ꢇꢏꢉꢊꢕꢂꢔꢈ 'ꢂꢔꢇꢅꢌꢉ
%*ꢘꢇꢕꢛ
$
#6 2 34 5ꢁ
#6 2 34 5ꢁ
#6 2 :49 5ꢁ
#6 2 :495ꢁ
ꢁ*,
$
%*,
(
ꢁ*9
Typical Applications
ꢏꢁ*
(
(%* 2 :4 (
:3)4
3);
ꢃH
(
,ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ
ꢒꢋꢌꢕ -ꢏꢉ.ꢑꢉꢍꢆꢋꢉꢊ /ꢄꢄꢔꢋꢆꢅꢇꢋꢂꢍꢊ
0ꢉꢔꢈꢋꢍꢌ ꢌꢉꢍꢉꢏꢅꢇꢂꢏ
,ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
ꢀ
ꢀ
ꢀ
ꢀ
$ꢁꢍꢂꢃ 2 :39 /) (%* 2 :4 ( #6 2 345ꢁꢆꢕꢋꢄꢔꢉ'F
<):4
=
ꢁ*ꢘꢊꢅꢇꢛ
#6 2 :345ꢁꢆꢕꢋꢄꢔꢉ'F
<)4
(
ꢁꢋꢉꢊ
8
ꢍ-
ꢍ-
ꢁꢂꢉꢊ
(ꢁ* 2 34) (%* 2 9 (
ꢓ 2 : ?ꢒI
9)8
1",
ꢀ
ꢁꢏꢉꢊ
9)<8
ꢍ-
ꢇꢈꢘꢂꢍꢛ
ꢇꢏ
33
:9
ꢍꢊ
ꢍꢊ
ꢃK
ꢍꢊ
ꢍꢊ
>
%ꢂꢍ 2 :: H
%ꢂꢓꢓ 2 :: H
(
ꢁꢁ 2 =99(
ꢁꢍꢂꢃ2 :39/
#6 2 :34 5ꢁ
%*2@:4(
*
$
J)4
3;9
38
ꢂꢍ
ꢇꢈꢘꢂꢓꢓꢛ
ꢇꢓ
>
(
*
=
ꢃK
ꢂꢓꢓ
>
ꢄꢉꢏ $%ꢚ#
9)=4
LM0
ꢇꢕꢘ6&ꢊꢛ
GB
GAL
GAR
1
05-04-2007 DIL
© by SEMIKRON
SK50GB067
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
(- 2 (*ꢁ
$-ꢍꢂꢃ 2 :39 /A (%* 2 9 (
#6 2 34 5ꢁꢆꢕꢋꢄꢔꢉ'F
#6 2 :49 5ꢁꢆꢕꢋꢄꢔꢉ'F
#6 2 34 5ꢁ
3
(
(
:)34
:
(
(
-9
#6 2 :49 5ꢁ
#6 2 34 5ꢁ
(
ꢏ-
ꢃH
ꢃH
#6 2 :49 5ꢁ
#6 2 :34 5ꢁ
=
®
$
$
ꢈꢋMꢈꢇ 2 &:99 /MDꢊ
ꢁꢁ2 =99(
-ꢍꢂꢃ 2 :39 /
/
SEMITOP 3
>>?
Nꢏꢏ
Dꢁ
*
(
ꢃK
LM0
!ꢃ
ꢌ
ꢏꢏ
IGBT Module
>
ꢄꢉꢏ ꢈꢋꢂꢈꢉ
9);
3)4
ꢇꢕꢘ6&ꢊꢛꢙ
?
ꢐ
ꢇꢂ ꢕꢉꢅꢇ ꢊꢋꢍO
3)34
ꢊ
3E
SK50GB067
SK50GAL067
SK50GAR067
Target Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Features
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢀ
ꢀ
ꢀ
ꢇꢕꢏꢂꢑꢌꢕ ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢉꢈ
ꢅꢔꢑꢃꢋꢍꢋꢑꢃ ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢁꢚꢛ
ꢒ ꢄꢉꢏꢓꢅꢊꢇ !"# ꢇꢉꢆꢕꢍꢂꢔꢂꢌ $%ꢚ#
!&ꢆꢕꢅꢍꢍꢉꢔ ꢕꢂꢃꢂꢌꢉꢍꢉꢂꢑꢊ ꢊꢋꢔꢋꢆꢂꢍ
ꢊꢇꢏꢑꢆꢇꢑꢏꢉ ꢘ!"#
ꢀ
ꢀ
!ꢂꢍ&"ꢑꢍꢆꢕ&#ꢕꢏꢂꢑꢌꢕ $%ꢚ#ꢛ
"ꢂꢊꢋꢇꢋ'ꢉ (
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ
ꢀ
ꢀ
ꢀ
ꢆꢉ)ꢊꢅꢇ
ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ ꢘ*ꢅꢊ ꢄꢅꢏꢅꢔꢔꢉꢔꢋꢍꢌꢛ
+ꢂꢐ ꢇꢅꢋꢔ ꢆꢑꢏꢏꢉꢍꢇ ꢐꢋꢇꢕ ꢔꢂꢐ
ꢇꢉꢃꢄꢉꢏꢅꢇꢑꢏꢉ ꢈꢉꢄꢉꢍꢈꢉꢍꢆꢉ
+ꢂꢐ ꢇꢏꢉꢊꢕꢂꢔꢈ 'ꢂꢔꢇꢅꢌꢉ
Typical Applications
,ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉꢛ
ꢒꢋꢌꢕ -ꢏꢉ.ꢑꢉꢍꢆꢋꢉꢊ /ꢄꢄꢔꢋꢆꢅꢇꢋꢂꢍꢊ
0ꢉꢔꢈꢋꢍꢌ ꢌꢉꢍꢉꢏꢅꢇꢂꢏ
,ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
ꢀ
ꢀ
ꢀ
ꢀ
1",
ꢀ
GB
GAL
GAR
2
05-04-2007 DIL
© by SEMIKRON
SK50GB067
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
05-04-2007 DIL
© by SEMIKRON
SK50GB067
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
4
05-04-2007 DIL
© by SEMIKRON
SK50GB067
UL recognized file
no. E 63 532
ꢁꢅꢊꢉ #88 ꢘ,ꢑꢌꢌꢉꢊꢇꢉꢈ ꢕꢂꢔꢉ ꢈꢋꢅꢃꢉꢇꢉꢏ) ꢋꢍ ꢇꢕꢉ "ꢁꢚ) ꢓꢂꢏ ꢊꢂꢔꢈꢉꢏ ꢄꢋꢍꢊ ꢅꢍꢈ ꢄꢔꢅꢊꢇꢋꢆ ꢃꢂꢑꢍꢇꢋꢍꢌ ꢄꢋꢍꢊP 3ꢃꢃꢛ
ꢁꢅꢊꢉ # 88
%ꢚ
ꢁꢅꢊꢉ # 88
%/>
ꢁꢅꢊꢉ # 88
%/+
5
05-04-2007 DIL
© by SEMIKRON
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