SK50GD126T_08 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK50GD126T_08 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总5页 (文件大小：876K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK50GD126T
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Absolute Maximum Ratings
Symbol Conditions
IGBT
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Values
Units
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Characteristics
Symbol Conditions
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Features
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1
27-08-2008 DIL
© by SEMIKRON
SK50GD126T
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
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SK50GD126T
Temperature sensor
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Preliminary Data
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Features
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* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
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GD-T
2
27-08-2008 DIL
© by SEMIKRON
SK50GD126T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (Ts)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
3
27-08-2008 DIL
© by SEMIKRON
SK50GD126T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
27-08-2008 DIL
© by SEMIKRON
SK50GD126T
UL recognized file
no. E 63 532
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27-08-2008 DIL
© by SEMIKRON
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