SK60GB28 [SEMIKRON]
IGBT Module; IGBT模块
| 型号： | SK60GB28 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Module |
| 文件： | 总4页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK 60 GB 128
$ % +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢊ
Values
Units
'
0+11
3 +1
'
'
9
9
ꢁ/"
'
2/"
)
)
$ꢊ % +, ꢘ41 -ꢁ5
67 ꢘ88
071 ꢘ<1
ꢁ
ꢇꢄ ; 0 ꢃꢊ5 $ꢊ % +, ꢘ41 -ꢁ5
ꢁ:
$
& 81 >>> ? 0,1
-ꢁ
=
Inverse/Freewheeling CAL diode
)
$ꢊ % +, ꢘ41 -ꢁ5
,A ꢘ74
9
9
@
®
)@: % & )ꢁ:
ꢇꢄ ; 0 ꢃꢊ5 $ꢊ % +, ꢘ41 -ꢁ5
008 ꢘ74
SEMITOP 3
$
& 81 >>> ? 0,1
-ꢁ
=
$
$
& 81 >>> ? 0+,
+61
-ꢁ
-ꢁ
ꢊꢇꢌ
IGBT Module
$ꢉꢏꢃꢋꢍꢅꢔꢊ. 01 ꢊ
ꢊꢂꢔ
'
9ꢁ ,1 ꢒB. ꢏ>ꢃ>ꢊ> 0 ꢃꢋꢍ> C 0 ꢊ
+,11 C 7111
'
ꢋꢊꢂꢔ
SK 60 GB 128
$ % +, -ꢁ. ꢑꢍꢔꢉꢊꢊ ꢂꢇꢕꢉꢏꢐꢋꢊꢉ ꢊꢄꢉꢆꢋꢓꢋꢉꢈ
Characteristics
Symbol Conditions
IGBT
ꢊ
Target Data
min.
typ.
max. Units
'
)ꢁ % 81 9. $= % +, ꢘ0+, -ꢁ
0.4 ꢘ0.<8
,.,
'
ꢁ/ꢘꢊꢅꢇ
Features
'
'ꢁ/ % '2/5 )ꢁ % 1.11+ 9
8.,
6.,
1.6
'
2/ꢘꢇꢕ
ꢁꢋꢉꢊ
'ꢁ/ % +, '5 '2/ % 1 '5 0 :ꢒB
8.,
ꢍ@
ꢁꢂꢃꢄꢅꢆꢇ ꢈꢉꢊꢋꢌꢍ
ꢎꢍꢉ ꢊꢆꢏꢉꢐ ꢃꢂꢑꢍꢇꢋꢍꢌ
ꢒꢉꢅꢇ ꢇꢏꢅꢍꢊꢓꢉꢏ ꢅꢍꢈ ꢋꢊꢂꢔꢅꢇꢋꢂꢍ
ꢇꢕꢏꢂꢑꢌꢕ
ꢀ
ꢀ
ꢀ
Dꢇꢕꢘ=&ꢊ
ꢄꢉꢏ )2ꢚ$
ECF
ꢄꢉꢏ ꢃꢂꢈꢑꢔꢉ
ECF
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG
ꢇꢈꢘꢂꢍ
ꢇꢏ
ꢇꢈꢘꢂꢓꢓ
ꢇꢓ
'
ꢁꢁ % 611 ' . '2/ % 3 0, '
41
,1
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢍꢊ
ꢈꢋꢏꢉꢆꢇ ꢆꢂꢄꢄꢉꢏ ꢖꢂꢍꢈꢋꢍꢌ ꢅꢔꢑꢃꢋꢍꢋꢑꢃ
ꢂꢗꢋꢈꢉ ꢆꢉꢏꢅꢃꢋꢆ ꢘꢙꢚꢁ
ꢒꢋꢌꢕ ꢊꢕꢂꢏꢇ ꢆꢋꢏꢆꢑꢋꢇ ꢆꢅꢄꢅꢖꢋꢔꢋꢇ!
"#$%"ꢂꢓꢇ&#ꢑꢍꢇꢆꢕ&$ꢕꢏꢂꢑꢌꢕ
ꢇꢉꢆꢕꢍꢂꢔꢂꢌ!
)ꢁ % ,1 9. $= % 0+, -ꢁ
D2ꢂꢍ % D2ꢂꢓꢓ % 0, H
8+1
81
ꢀ
ꢀ
/ꢂꢍ ? /ꢂꢓꢓ
)ꢍꢈꢑꢆꢇꢋ(ꢉ ꢔꢂꢅꢈ
01.8
ꢃI
Inverse/Freewheeling CAL diode
'
ꢐꢋꢇꢕ ꢄꢂꢊꢋꢇꢋ(ꢉ ꢆꢂꢉꢓꢓꢋꢆꢋꢉꢍꢇ
ꢀ
ꢆꢉꢘꢊꢅꢇ
'@ % '/ꢁ
)
@ % ,1 95 $= % +, ꢘ0+, -ꢁ
+ ꢘ0.4
'
'
Typical Applications
"ꢐꢋꢇꢆꢕꢋꢍꢌ ꢘꢍꢂꢇ ꢓꢂꢏ ꢔꢋꢍꢉꢅꢏ ꢑꢊꢉ
)ꢍ(ꢉꢏꢇꢉꢏ
"ꢐꢋꢇꢆꢕꢉꢈ ꢃꢂꢈꢉ ꢄꢂꢐꢉꢏ ꢊꢑꢄꢄꢔꢋꢉꢊ
*#"
'
$= % 0+, -ꢁ
0
0.+
++
ꢘ$ꢎ
ꢏ$
$= % 0+, ꢘ -ꢁ
06
ꢃH
ꢀ
ꢀ
ꢀ
ꢀ
Dꢇꢕꢘ=&ꢊ
1.<
ECF
ꢑꢍꢈꢉꢏ ꢓꢂꢔꢔꢂꢐꢋꢍꢌ ꢆꢂꢍꢈꢋꢇꢋꢂꢍꢊG
)
)
@ % ,1 95 'D % 611 '
ꢈ)@Cꢈꢇ % &411 9CKꢊ
2/ % 1 '5 $= % 0+, -ꢁ
81
4
9
DD:
Jꢏꢏ
Kꢁ
/
'
+
ꢃI
ꢂꢓꢓ
Mechanical data
:0
ꢃꢂꢑꢍꢇꢋꢍꢌ ꢇꢂꢏLꢑꢉ
+.,
Mꢃ
ꢌ
ꢐ
+<
ꢁꢅꢊꢉ
"/:)$ꢎ#N
7
$ +A
GB
1
19-10-2005 RAM
© by SEMIKRON
SK 60 GB 128
Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C
Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
2
19-10-2005 RAM
© by SEMIKRON
SK 60 GB 128
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig.13 Typ. CAL Diode peak reverse recovery current
Fig. 14 Typ. CAL Diode forward characteristic
3
19-10-2005 RAM
© by SEMIKRON
SK 60 GB 128
UL Recognized
File no. E 63532
Dimensions in mm
ꢁꢅꢊꢉ $+A
2ꢚ
"*22/"$/ꢙ ꢒꢎO/ꢙ)9:/$/D @ꢎD $ꢒ/ "ꢎOꢙ/D #)M" 9Mꢙ $ꢒ/ :ꢎ*M$)M2 #)M" )M $ꢒ/
#ꢁꢚG + ꢃꢃ
ꢁꢅꢊꢉ $+A
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2005 RAM
© by SEMIKRON
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