SKCD31C120I [SEMIKRON]
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon,;
| 型号： | SKCD31C120I |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 软恢复二极管 |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Absolute Maximum Ratings
SEMICELL
CAL - Diode Chips3)
Symbol
Conditions 1)
Values
Units
VRRM
IFSM
1200
V
SKCD 31C 120 I
(≥ 3 bondwires 300 µm
)
tp = 10 ms; sin; Tj = 150 °C
tp = 10 ms; sin; Tj = 150 °C
max. 120 s (transfer)
min
350
540
375
– 55
+ 150
A
A2s
°C
°C
°C
5,6 x 5,6 mm; 30 A4); 1200 V
I2
t
Tsolder
Tvj, Tstg
Tvj, Tstg
max
Characteristics
Symbol
Conditions 1)
min.
typ.
max.
Units
IRM
VF
Tj = 25 °C/125 °C; VRRM
IF = 25 A; Tj = 25 °C
Tj = 125 °C
IF = 40 A; Tj = 25 °C
Tj = 125 °C
0,1 / 4
2,35
mA
V
V
V
V
1,85
1,7
2,20
2,1
1,0
26
VF
VT(TO)
rT
IRRM
Tj = 125 °C, see Fig. 1
Tj = 125 °C
1,2
40
V
mΩ
IF = 25 A; 2)
Tj = 125 °C
25
2
4,5
250
A
Qrr
IF = 25 A; Tj = 25 °C
µC
µC
°C
°C
2)
Tj = 125 °C
Tsolder
Tsolder
10 min
5 min
320
Features
•
•
•
Low voltage drop
low temperature dependence
Very soft reverse recovery
under all conditions
CAL = Controlled Axial
Lifetime Technology
Top side = Al for bonding
by aluminum wire
Mechanical Data
Atot
Aact.
w
total area
active area
weight
31
20
20
mm2
mm2
mg
•
•
•
Supplied on frames, on request
Please contact factory
Bottom = 4 layer metallisation
for soldering
Typical Applications
•
Inverse diode for IGBT
(in inverter drives)
•
Freewheeling diode in brake
choppers or step-up choppers
with IGBT or MOSFET
UPS Uninteruptible Power
Supplies
1)
Tcase = 25 °C, unless otherwise specified
VR = 600 V; – diF/dt = 500 A/µs;
CAL = Controlled Axial Lifetime Technology
Soldered on DCB ceramic (Al2O3) 0,4 mm thick
on a 3 mm copper base plate Rthjc = 1 K/W
Tjm = 150 °C; Tcase = 80 °C.
2)
3)
•
•
4)
Hybrid circuits for static power
converters
© by SEMIKRON
0896
B 15 – 25
B 15 – 26
0896
© by SEMIKRON
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