SKM400GAL176D [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM400GAL176D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总6页 (文件大小：762K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB176D
ꢋ
ꢏ /(0ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ1 ꢏ /( 0ꢕ
3)++
45+
ꢔ
&
&
%
ꢋ1 ꢏ 3(+ 0ꢕ
ꢋꢍ ꢏ /( 0ꢕ
ꢋꢍ ꢏ 6+ 0ꢕ
ꢕ
53+
%
%
ꢕ78ꢏ/$%ꢕꢆꢂꢃ
#++
: /+
3+
&
ꢔ
ꢕ78
ꢔ9ꢖꢉ
ꢑꢚꢈꢍ
ꢔꢕꢕ ꢏ 3/++ ꢔ; ꢔ9ꢖ < /+ ꢔ; ꢋ1 ꢏ 3/( 0ꢕ
ꢔꢕꢖꢉ = 3)++ ꢔ
>ꢈ
®
SEMITRANS 3
Inverse Diode
Trench IGBT Modules
%
ꢋ1 ꢏ 3(+ 0ꢕ
ꢋꢍ ꢏ /( 0ꢕ
ꢋꢍ ꢏ 6+ 0ꢕ
44+
5++
&
&
?
%
%
%
?78ꢏ/$%?ꢆꢂꢃ
#++
&
&
?78
SKM 400GB176D
SKM 400GAL176D
ꢑꢚ ꢏ 3+ ꢃꢈ; ꢈꢊꢆ-
ꢋ1 ꢏ 3(+ 0ꢕ
//++
?ꢉ8
Freewheeling Diode
%
ꢋ1 ꢏ 3(+ 0ꢕ
ꢋꢍꢐꢈꢅ ꢏ /( 0ꢕ
ꢋꢍꢐꢈꢅ ꢏ 6+ 0ꢕ
44+
5++
&
&
?
Preliminary Data
%
%
%
?78ꢏ/$%?ꢆꢂꢃ
#++
&
&
?78
ꢑꢚ ꢏ 3+ ꢃꢈ; ꢈꢊꢆ-
ꢋ1 ꢏ 3(+ 0ꢕ
//++
?ꢉ8
Features
Module
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
%
(++
&
0ꢕ
0ꢕ
ꢔ
ꢑꢗ78ꢉꢘ
ꢋꢛ1
* 4+ --- @ 3(+
* 4+ --- @ 3/(
4+++
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢀ
&ꢕ" 3 ꢃꢊꢆ-
ꢕ
ꢋ
ꢏ /(0ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Typical Applications
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ ()( * )(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
.ꢊꢆ' ꢚꢂꢙꢅꢌ
min.
typ.
max. Units
ꢀ
ꢀ
ꢀ
ꢔ9ꢖꢗꢑꢎꢘ
ꢔ9ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ 3/ ꢃ&
("/
("6
#"4
ꢔ
ꢀ
%
ꢔ9ꢖ ꢏ + ꢔ" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ1 ꢏ /( 0ꢕ
ꢋ1 ꢏ /( 0ꢕ
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ /(0ꢕ
ꢋ1 ꢏ 3/(0ꢕ
+"3(
3
+"4(
3"/
3"3
4"/
#
ꢃ&
ꢔ
ꢕꢖꢉ
ꢔꢕꢖ+
+"A
5"5
("/
/
ꢔ
ꢌꢕꢖ
ꢔ9ꢖ ꢏ 3( ꢔ
ꢃB
ꢃB
ꢔ
ꢔꢕꢖꢗꢈꢐꢑꢘ
%
ꢕꢆꢂꢃ ꢏ 5++ &" ꢔ9ꢖ ꢏ 3( ꢔ ꢋ1 ꢏ /(0ꢕꢍꢎꢊꢚꢒꢅꢛ-
/"4
/"A
ꢋ1 ꢏ 3/(0ꢕꢍꢎꢊꢚꢒꢅꢛ-
/"4(
ꢔ
ꢕꢊꢅꢈ
3A"6
3"3
ꢆ?
ꢆ?
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ /(" ꢔ9ꢖ ꢏ + ꢔ
ꢔ9ꢖ ꢏ *6ꢔ---@3(ꢔ
ꢏ 3 8ꢁC
ꢕꢌꢅꢈ
D9
+"66
ꢆ?
ꢆꢕ
/(++
ꢑ'ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ'ꢗꢂ ꢘ
55+
((
ꢆꢈ
ꢆꢈ
ꢃE
ꢆꢈ
ꢆꢈ
79ꢂꢆ ꢏ 4 B
79ꢂ ꢏ 4 B
ꢔꢕꢕ ꢏ 3/++ꢔ
%ꢕꢆꢂꢃꢏ 5++&
3)+
66+
34(
ꢋ1 ꢏ 3/( 0ꢕ
ꢑ
ꢔ9ꢖ ꢏ : 3(ꢔ
ꢖꢂ
336
ꢃE
7ꢑꢎꢗ1*ꢍꢘ
ꢚꢅꢌ %9Fꢋ
+"+)(
GH.
GB
GAL
1
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ? ꢏ ꢔꢖꢕ
%?ꢆꢂꢃ ꢏ 5++ &; ꢔ9ꢖ ꢏ + ꢔ
ꢋ1 ꢏ /( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ 3/( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ /( 0ꢕ
3")
3"6
3"/
+"A
3")
5
3"A
/
ꢔ
ꢔ
ꢔ?+
3"4
3"3
3")
5
ꢔ
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ /( 0ꢕ
ꢔ
ꢌ?
ꢃB
ꢃB
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ 3/( 0ꢕ
®
%
%?ꢆꢂꢃ ꢏ 5++ &
436
33)
&
778
SEMITRANS 3
Dꢌꢌ
ꢖꢌꢌ
'ꢊH'ꢑ ꢏ (6++ &H>ꢈ
>ꢕ
ꢔ9ꢖ ꢏ *3( ꢔ; ꢔꢕꢕ ꢏ 3/++ ꢔ
)6
ꢃE
Trench IGBT Modules
7ꢑꢎꢗ1*ꢍꢘI
ꢚꢅꢌ 'ꢊꢂ'ꢅ
+"3/(
GH.
FWD
ꢔ? ꢏ ꢔꢖꢕ
%
?ꢆꢂꢃ ꢏ 5++ &; ꢔ9ꢖ ꢏ + ꢔ
ꢋ1 ꢏ /( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ 3/( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ /( 0ꢕ
3")
3"6
3"/
+"A
3")
5
3"A
/
ꢔ
ꢔ
ꢔ
ꢔ
ꢔ
ꢔ
SKM 400GB176D
SKM 400GAL176D
ꢔ?+
3"4
3"3
3")
5
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ /( 0ꢕ
ꢌ?
Preliminary Data
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ 3/( 0ꢕ
%
%?ꢆꢂꢃ ꢏ 5++ &
436
33)
&
778
Dꢌꢌ
ꢖꢌꢌ
'ꢊH'ꢑ ꢏ (6++ &H>ꢈ
>ꢕ
Features
ꢔ9ꢖ ꢏ *3( ꢔ; ꢔꢕꢕ ꢏ 3/++ ꢔ
)6
ꢃE
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
7ꢑꢎꢗ1*ꢍꢘ?I
ꢚꢅꢌ 'ꢊꢂ'ꢅ
+"3/(
/+
GH.
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
Module
Jꢕꢖ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
3(
+"5(
+"(
ꢆꢁ
ꢃB
ꢃB
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
7ꢕꢕK@ꢖꢖK
ꢌꢅꢈ-" ꢑꢅꢌꢃꢊꢆꢐꢒ*ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ /( 0ꢕ
ꢋꢍꢐꢈꢅꢏ 3/( 0ꢕ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications
7ꢑꢎꢗꢍ*ꢈꢘ
8ꢈ
ꢚꢅꢌ ꢃꢂ'ꢇꢒꢅ
+"+56
(
GH.
Mꢃ
Mꢃ
ꢄ
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ ()( * )(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
.ꢊꢆ' ꢚꢂꢙꢅꢌ
ꢀ
ꢀ
ꢀ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆL 8#
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 8#
5
8ꢑ
/"(
(
ꢙ
5/(
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Z
th
Symbol Conditions
Values
Units
Z
th(j-c)l
7ꢊ
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
ꢊ ꢏ 4
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
(/
ꢃLH.
ꢃLH.
ꢃLH.
ꢃLH.
ꢈ
7ꢊ
36
7ꢊ
4"#
7ꢊ
+"4
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+(#A
+"+3//
+"++/
ꢈ
ꢈ
®
ꢑꢐꢇꢊ
ꢊ ꢏ 4
+"+/
ꢈ
SEMITRANS 3
Z
7ꢊ
th(j-c)D
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
ꢊ ꢏ 4
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
6(
ꢃLH.
ꢃLH.
ꢃLH.
ꢃLH.
ꢈ
Trench IGBT Modules
7ꢊ
/6
7ꢊ
3+"(
3"(
7ꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+(4
+"++)(
+"++36
SKM 400GB176D
SKM 400GAL176D
ꢈ
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ 4
+"+++/
ꢈ
Preliminary Data
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ ()( * )(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
.ꢊꢆ' ꢚꢂꢙꢅꢌ
ꢀ
ꢀ
ꢀ
ꢀ
GB
GAL
3
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
4
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
28-09-2007 ARW
© by SEMIKRON
SKM 400GB176D
ꢕꢐꢈꢅ I (#
9F
ꢕꢐꢈꢅ I(#
9&J
ꢕꢐꢈꢅ I()
6
28-09-2007 ARW
© by SEMIKRON
相关型号：
SKM400GB062D
Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, SEMITRANS-9
SEMIKRON
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