SKM75GB176D [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM75GB176D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总6页 (文件大小：755K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 75GB176D
ꢋ
ꢏ .(/ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ0 ꢏ .( /ꢕ
2)++
3+
ꢔ
&
&
%
ꢋ0 ꢏ 2(+ /ꢕ
ꢋꢍ ꢏ .( /ꢕ
ꢋꢍ ꢏ 3+ /ꢕ
ꢕ
((
%
%
ꢕ45ꢏ.$%ꢕꢆꢂꢃ
2++
7 .+
2+
&
ꢔ
ꢕ45
ꢔ6ꢖꢉ
ꢑꢚꢈꢍ
ꢔꢕꢕ ꢏ 2.++ ꢔ8 ꢔ6ꢖ 9 .+ ꢔ8 ꢋ0 ꢏ 2.( /ꢕ
ꢔꢕꢖꢉ : 2)++ ꢔ
;ꢈ
®
SEMITRANS 2
Inverse Diode
%
ꢋ0 ꢏ 2(+ /ꢕ
ꢋꢍ ꢏ .( /ꢕ
ꢋꢍ ꢏ 3+ /ꢕ
3+
((
&
&
<
Trench IGBT Modules
%
%
%
<45ꢏ.$%<ꢆꢂꢃ
2++
((+
&
&
<45
ꢑꢚ ꢏ 2+ ꢃꢈ8 ꢈꢊꢆ-
ꢋ0 ꢏ 2(+ /ꢕ
<ꢉ5
SKM 75GB176D
Module
%
.++
&
/ꢕ
/ꢕ
ꢔ
ꢑꢗ45ꢉꢘ
ꢋꢛ0
*=+ --- > 2(+
*=+ --- > 2.(
=+++
Preliminary Data
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
&ꢕ" 2 ꢃꢊꢆ-
Features
ꢋ
ꢏ .(/ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Characteristics
Symbol Conditions
IGBT
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢍꢐꢈꢅ
ꢀ
ꢀ
ꢀ
min.
typ.
max. Units
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢔ6ꢖꢗꢑꢎꢘ
ꢔ6ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ . ꢃ&
(".
("3
#"=
ꢔ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
%
ꢔ6ꢖ ꢏ + ꢔ" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ0 ꢏ .( /ꢕ
+"2
2
+"?
2".
2"2
.(
ꢃ&
ꢔ
ꢕꢖꢉ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
ꢔꢕꢖ+
ꢋ0 ꢏ .( /ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ ꢃꢐꢊꢆꢈ ()( *
)(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
ꢋ0 ꢏ 2.( /ꢕ
ꢋ0 ꢏ .(/ꢕ
+"@
.+
?2
.
ꢔ
ꢌꢕꢖ
ꢔ6ꢖ ꢏ 2( ꢔ
ꢃA
ꢃA
ꢔ
ꢀ
ꢋ0 ꢏ 2.(/ꢕ
?#
ꢀ
ꢔꢕꢖꢗꢈꢐꢑꢘ
%ꢕꢆꢂꢃ ꢏ (+ &" ꢔ6ꢖ ꢏ 2( ꢔ
ꢋ0 ꢏ .(/ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ0 ꢏ 2.(/ꢕꢍꢎꢊꢚꢒꢅꢛ-
."=(
."@
."=(
ꢔ
ꢕꢊꢅꢈ
="?
ꢆ<
ꢆ<
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ .(" ꢔ6ꢖ ꢏ + ꢔ
ꢏ 2 5ꢁB
+"23
ꢕꢌꢅꢈ
C6
+"2(
=2+
@"(
ꢆ<
ꢆꢕ
D
ꢔ6ꢖ ꢏ *3ꢔ--->2(ꢔ
ꢋ0 ꢏ .( /ꢕ
46ꢊꢆꢑ
ꢑ'ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ'ꢗꢂ ꢘ
.2+
?+
ꢆꢈ
ꢆꢈ
ꢃF
ꢆꢈ
ꢆꢈ
46ꢂꢆ ꢏ #". A
ꢔꢕꢕ ꢏ 2.++ꢔ
'ꢊE'ꢑ ꢏ 2#3+ &E;ꢈ
46ꢂ ꢏ #". A
%ꢕꢆꢂꢃꢏ (+&
.(
ꢋ0 ꢏ 2.( /ꢕ
ꢔ6ꢖ ꢏ 72(ꢔ
(@+
2?(
ꢑ
'ꢊE'ꢑ ꢏ ?.+ &E;ꢈ
ꢖꢂ
23
ꢃF
4ꢑꢎꢗ0*ꢍꢘ
ꢚꢅꢌ %6Gꢋ
+"?3
HEI
GB
1
14-11-2006 RAA
© by SEMIKRON
SKM 75GB176D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ< ꢏ ꢔꢖꢕ
%<ꢆꢂꢃ ꢏ (+ &8 ꢔ6ꢖ ꢏ + ꢔ
ꢋ0 ꢏ .( /ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ0 ꢏ 2.( /ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ0 ꢏ .( /ꢕ
2")
2"3
2"2
+"@
2.
2"@
.
ꢔ
ꢔ
ꢔ<+
2"?
2"2
2.
23
ꢔ
ꢋ0 ꢏ 2.( /ꢕ
ꢋ0 ꢏ .( /ꢕ
ꢔ
ꢌ<
ꢃA
ꢃA
ꢋ0 ꢏ 2.( /ꢕ
ꢋ0 ꢏ 2.( /ꢕ
23
%
%<ꢆꢂꢃ ꢏ (+ &
(.
.+
&
445
®
Cꢌꢌ
ꢖꢌꢌ
'ꢊE'ꢑ ꢏ 2?.+ &E;ꢈ
;ꢕ
SEMITRANS 2
ꢔ6ꢖ ꢏ *2( ꢔ8 ꢔꢕꢕ ꢏ 2.++ ꢔ
2="(
ꢃF
4ꢑꢎꢗ0*ꢍꢘJ
ꢚꢅꢌ 'ꢊꢂ'ꢅ
+"((
?+
HEI
Trench IGBT Modules
Module
Kꢕꢖ
ꢆꢁ
ꢃA
ꢃA
4ꢕꢕL>ꢖꢖL
ꢌꢅꢈ-" ꢑꢅꢌꢃꢊꢆꢐꢒ*ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ .( /ꢕ
ꢋꢍꢐꢈꢅꢏ 2.( /ꢕ
+")(
2
SKM 75GB176D
4ꢑꢎꢗꢍ*ꢈꢘ
5ꢈ
ꢚꢅꢌ ꢃꢂ'ꢇꢒꢅ
+"+(
(
HEI
Nꢃ
Nꢃ
ꢄ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆM 5#
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 5(
?
Preliminary Data
5ꢑ
."(
(
ꢙ
2#+
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ ꢃꢐꢊꢆꢈ ()( *
)(+ ꢔ &ꢕ
ꢀ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
ꢀ
GB
2
14-11-2006 RAA
© by SEMIKRON
SKM 75GB176D
Z
th
Symbol Conditions
Values
Units
Z
th(j-c)l
4ꢊ
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ ?
ꢊ ꢏ =
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ ?
.)+
ꢃMEI
ꢃMEI
ꢃMEI
ꢃMEI
ꢈ
4ꢊ
3(
4ꢊ
.2
4ꢊ
=
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+?@?
+"+)3#
+"++2=
ꢈ
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ =
+"+++.
ꢈ
®
Z
4ꢊ
SEMITRANS 2
th(j-c)D
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ ?
ꢊ ꢏ =
ꢊ ꢏ 2
ꢊ ꢏ .
ꢊ ꢏ ?
?#+
ꢃMEI
ꢃMEI
ꢃMEI
ꢃMEI
ꢈ
4ꢊ
2(+
Trench IGBT Modules
4ꢊ
?#
4ꢊ
=
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+.#.
+"+=2)
+"++2.
ꢈ
SKM 75GB176D
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ =
+"++2
ꢈ
Preliminary Data
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ ꢃꢐꢊꢆꢈ ()( *
)(+ ꢔ &ꢕ
ꢀ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
ꢀ
GB
3
14-11-2006 RAA
© by SEMIKRON
SKM 75GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
4
14-11-2006 RAA
© by SEMIKRON
SKM 75GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11Typ. CAL diode peak reverse recovery current
Fig. 12Typ. CAL diode peak reverse recovery charge
5
14-11-2006 RAA
© by SEMIKRON
SKM 75GB176D
UL Regognized
File no. E 63 532
ꢕꢐꢈꢅ J #2
6G
ꢕꢐꢈꢅ J #2
6
14-11-2006 RAA
© by SEMIKRON
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